公开(公告)号：US09465007B2

公开(公告)日：2016-10-11

申请号：US14224770

申请日：2014-03-25

申请人： Jeo-young Shim ,  Tae-han Jeon ,  Dong-ho Lee ,  Hee-jeong Jeong ,  Seong-ho Cho

发明人： Jeo-young Shim ,  Tae-han Jeon ,  Dong-ho Lee ,  Hee-jeong Jeong ,  Seong-ho Cho

IPC分类号： G01N27/447 ,  G01N33/487

CPC分类号： G01N27/44791 ,  G01N33/48721

摘要： A nanosensor may include a substrate that has a hole formed therein, a first insulating layer that is disposed on the substrate and has a nanopore formed therein, first and second electrodes that are disposed on the first insulating layer and are spaced apart from each other, first and second electrode pads that are disposed on the first and second electrodes, respectively, and a protective layer disposed on the first and second electrode pads. A method of manufacturing a nanosensor may include forming a first insulating layer, graphene, and a metal layer on a substrate, patterning the metal layer and the graphene, forming a protective layer on a portion of the graphene and the metal layer, exposing a portion of the graphene by removing a portion of the protective layer, forming a hole in the substrate, and forming a nanopore in the first insulating layer and the graphene to be connected to the hole.

摘要翻译： 纳米传感器可以包括其中形成有孔的基板，设置在基板上并且在其中形成有纳米孔的第一绝缘层，设置在第一绝缘层上并彼此间隔开的第一和第二电极， 分别设置在第一和第二电极上的第一和第二电极焊盘以及设置在第一和第二电极焊盘上的保护层。 制造纳米传感器的方法可以包括在基板上形成第一绝缘层，石墨烯和金属层，图案化金属层和石墨烯，在石墨烯和金属层的一部分上形成保护层，将部分 通过去除保护层的一部分，在衬底中形成孔，并在第一绝缘层中形成纳米孔和与孔连接的石墨烯。

公开(公告)号：US09068914B2

公开(公告)日：2015-06-30

申请号：US13605711

申请日：2012-09-06

申请人： Jeo-young Shim ,  Tae-han Jeon ,  Kun-sun Eom ,  Dong-ho Lee ,  Hee-jeong Jeong ,  Seong-ho Cho

发明人： Jeo-young Shim ,  Tae-han Jeon ,  Kun-sun Eom ,  Dong-ho Lee ,  Hee-jeong Jeong ,  Seong-ho Cho

IPC分类号： G01N27/414 ,  G01N15/10 ,  B82Y15/00 ,  G01N33/487 ,  G01N15/00

CPC分类号： G01N15/1031 ,  B82Y15/00 ,  G01N15/1056 ,  G01N33/48721 ,  G01N2015/0038

摘要： A nanogap sensor includes a first layer in which a micropore is formed; a graphene sheet disposed on the first layer and including a nanoelectrode region in which a nanogap is formed, the nanogap aligned with the micropore; a first electrode formed on the grapheme sheet; and a second electrode formed on the graphene sheet, wherein the first electrode and the second electrode are connected to respective ends of the nanoelectrode region.

摘要翻译： 纳米隙传感器包括其中形成微孔的第一层; 设置在所述第一层上并且包括其中形成有纳米隙的纳米电极区域的所述纳米隙与所述微孔对准的石墨烯片; 形成在所述刻画片上的第一电极; 以及形成在所述石墨烯片上的第二电极，其中所述第一电极和所述第二电极连接到所述纳米电极区域的各个端部。

公开(公告)号：US20140202866A1

公开(公告)日：2014-07-24

申请号：US14224770

申请日：2014-03-25

申请人： Jeo-young SHIM ,  Tae-han Jeon ,  Dong-ho Lee ,  Hee-jeong Jeong ,  Seong-ho Cho

发明人： Jeo-young SHIM ,  Tae-han Jeon ,  Dong-ho Lee ,  Hee-jeong Jeong ,  Seong-ho Cho

IPC分类号： G01N27/447

CPC分类号： G01N27/44791 ,  G01N33/48721

摘要： A nanosensor may include a substrate that has a hole formed therein, a first insulating layer that is disposed on the substrate and has a nanopore formed therein, first and second electrodes that are disposed on the first insulating layer and are spaced apart from each other, first and second electrode pads that are disposed on the first and second electrodes, respectively, and a protective layer disposed on the first and second electrode pads. A method of manufacturing a nanosensor may include forming a first insulating layer, graphene, and a metal layer on a substrate, patterning the metal layer and the graphene, forming a protective layer on a portion of the graphene and the metal layer, exposing a portion of the graphene by removing a portion of the protective layer, forming a hole in the substrate, and forming a nanopore in the first insulating layer and the graphene to be connected to the hole.

摘要翻译： 纳米传感器可以包括其中形成有孔的基板，设置在基板上并且在其中形成有纳米孔的第一绝缘层，设置在第一绝缘层上并彼此间隔开的第一和第二电极， 分别设置在第一和第二电极上的第一和第二电极焊盘以及设置在第一和第二电极焊盘上的保护层。 制造纳米传感器的方法可以包括在基板上形成第一绝缘层，石墨烯和金属层，图案化金属层和石墨烯，在石墨烯和金属层的一部分上形成保护层，将部分 通过去除保护层的一部分，在衬底中形成孔，并在第一绝缘层中形成纳米孔和与孔连接的石墨烯。

公开(公告)号：US08288738B2

公开(公告)日：2012-10-16

申请号：US12613118

申请日：2009-11-05

申请人： Seong-ho Cho ,  Dong-ho Lee

发明人： Seong-ho Cho ,  Dong-ho Lee

IPC分类号： G01N21/76 ,  G01T1/10

CPC分类号： G01N21/6452 ,  G01N21/6454 ,  G01N2021/6439 ,  G01N2021/6478 ,  G01N2035/00158

摘要： A substrate for detecting samples includes; a body, and a plurality of micro lenses arranged on the body and configured for attachment to at least one sample, wherein the at least one sample emits fluorescent light, and wherein the plurality of micro lenses condense the fluorescent light emitted from the at least one sample via refraction.

摘要翻译： 用于检测样品的衬底包括： 主体和多个微透镜，其布置在主体上并且被配置为附接到至少一个样品，其中所述至少一个样品发射荧光，并且其中所述多个微透镜将从所述至少一个样品发射的荧光冷凝 样品通过折射。

公开(公告)号：US20150028278A1

公开(公告)日：2015-01-29

申请号：US14444083

申请日：2014-07-28

申请人： Myoung-jae Lee ,  Seong-ho Cho ,  Ho-jung Kim ,  Young-soo Park ,  David Seo ,  In-kyeong Yoo

发明人： Myoung-jae Lee ,  Seong-ho Cho ,  Ho-jung Kim ,  Young-soo Park ,  David Seo ,  In-kyeong Yoo

IPC分类号： H01L45/00

CPC分类号： H01L29/788 ,  G06N3/049 ,  G06N3/063 ,  G11C11/54 ,  G11C11/5685 ,  G11C13/0007 ,  G11C14/0063 ,  G11C16/0433 ,  G11C2213/15 ,  G11C2213/53 ,  H01L27/11521 ,  H01L28/00 ,  H01L29/408 ,  H01L29/42324 ,  H01L29/51 ,  H01L29/512 ,  H01L29/517 ,  H01L29/685 ,  H01L29/78 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/147

摘要： Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.

摘要翻译： 提供了非易失性存储晶体管和包括非易失性存储晶体管的器件。 非易失性存储晶体管可以包括沟道元件，对应于沟道元件的栅极电极，沟道元件和栅电极之间的栅极绝缘层，栅极绝缘层和栅电极之间的离子物质移动层，以及源极 以及相对于沟道元件彼此分离的漏极。 根据施加到栅电极的电压，发生离子物质移动层处的离子物质的运动。 阈值电压根据离子物质的运动而变化。 非易失性存储晶体管具有多电平特性。

公开(公告)号：US08333932B2

公开(公告)日：2012-12-18

申请号：US12704163

申请日：2010-02-11

申请人： Kyu-sang Lee ,  Seong-ho Cho ,  Carl S. Brown ,  Kyla Teplitz

发明人： Kyu-sang Lee ,  Seong-ho Cho ,  Carl S. Brown ,  Kyla Teplitz

IPC分类号： G01N33/48

CPC分类号： B01J19/0046 ,  B01J2219/0054 ,  B01J2219/0056 ,  B01J2219/00608 ,  B01J2219/00693 ,  Y10T428/24802

摘要： A substrate includes; a fiducial mark disposed on the substrate, an area on the substrate on which a probe material is configured to be immobilized, the area being separated from the fiducial mark, and a probe immobilization compound disposed on the area on the substrate on which the probe material is configured to be immobilized, wherein the fiducial mark has a structure which reflects irradiated light at a greater intensity than an intensity of reflected irradiated light form the area on the substrate not corresponding to the fiducial mark.

摘要翻译： 基板包括： 设置在基板上的基准标记，基板上的被配置为固定的探针材料的区域，与基准标记分离的区域，以及设置在基板上的探针固定化合物上的探针固定化合物，探针材料 被配置为被固定，其中基准标记具有以比反射的照射光的强度更大的强度反射照射的光的结构，形成不对应于基准标记的基板上的区域。

公开(公告)号：US08263001B2

公开(公告)日：2012-09-11

申请号：US12609253

申请日：2009-10-30

申请人： Seong-ho Cho

发明人： Seong-ho Cho

IPC分类号： G01N21/00 ,  G02B6/00 ,  F21V9/16 ,  C12Q1/68 ,  G01J3/30

CPC分类号： G01N21/6452 ,  B01J2219/00524 ,  B01J2219/00576 ,  B01J2219/00659 ,  B01J2219/00702 ,  G01N21/6428 ,  G01N2021/6484

摘要： An integrated bio-chip includes a substrate and one or more excitation light absorbing waveguides disposed in the substrate. The substrate includes one or more reaction regions on which samples are disposed. An end portion of each of the one or more excitation light absorbing waveguides is exposed from the substrate at an upper surface thereof, another end portion of each of the one or more excitation light absorbing waveguides is exposed from the substrate at a lower surface thereof, and the one or more reaction regions are disposed at a upper surface of the substrate. The one or more excitation light absorbing waveguides absorbs excitation light incident to the samples, and transmits fluorescent light emitted from the samples.

摘要翻译： 集成生物芯片包括衬底和设置在衬底中的一个或多个激发光吸收波导。 底物包括其上设置样品的一个或多个反应区域。 一个或多个激发光吸收波导中的每一个的端部在其上表面从基板露出，所述一个或多个激发光吸收波导中的每一个的另一端部在其下表面从基板露出， 并且一个或多个反应区域设置在基板的上表面。 一个或多个激发光吸收波导吸收入射到样品的激发光，并且透射从样品发射的荧光。

公开(公告)号：US08246912B2

公开(公告)日：2012-08-21

申请号：US12533560

申请日：2009-07-31

申请人： Seong-ho Cho

发明人： Seong-ho Cho

IPC分类号： G01N21/64 ,  G01N21/00 ,  C40B60/12 ,  G01N21/76 ,  G01J3/42

CPC分类号： G01N21/6456 ,  G01N21/6428

摘要： An optical detecting apparatus for a bio-chip, the optical detecting apparatus including: a light source system for illuminating a bio-chip with an excitation light; a fluorescent light detecting system for detecting a fluorescent light emitted by the bio-chip; and a light path altering unit for directing the excitation light emitted by the light source system to a bio-chip and directing the fluorescent light emitted by the bio-chip to the fluorescent light detecting system, wherein a cross-sectional area of the excitation light irradiated by the light source system onto the bio-chip is greater than an area of the bio-chip, and the fluorescent light detecting system detects a fluorescent image of the entire bio-chip with a single illumination of excitation light.

摘要翻译： 一种用于生物芯片的光学检测装置，所述光学检测装置包括：用激发光照射生物芯片的光源系统; 荧光检测系统，用于检测由生物芯片发射的荧光; 以及光路改变单元，用于将由光源系统发射的激发光引导到生物芯片并将生物芯片发射的荧光指向荧光检测系统，其中激发光的横截面积 由光源系统照射在生物芯片上的面积大于生物芯片的面积，并且荧光检测系统利用激发光的单次照明来检测整个生物芯片的荧光图像。

公开(公告)号：US20120187463A1

公开(公告)日：2012-07-26

申请号：US13438340

申请日：2012-04-03

申请人： Chang-Rok MOON ,  Duck-hyung LEE ,  Seong-ho Cho

发明人： Chang-Rok MOON ,  Duck-hyung LEE ,  Seong-ho Cho

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

摘要翻译： 具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。 布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。 支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。

公开(公告)号：US08164126B2

公开(公告)日：2012-04-24

申请号：US12037691

申请日：2008-02-26

申请人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

发明人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

摘要翻译： 具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。 布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。 支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。