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1.发明授权公开(公告)号：US07052583B2
公开(公告)日：2006-05-30
申请号：US10755452
申请日：2004-01-13
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , H01J37/3408
摘要： A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, wherein one magnet unit is disposed around the outer circumference of another magnet unit and adjacent magnet units have opposite poles facing toward the same direction. Uniform magnetic field distribution is obtained. Therefore, the erosion profile of a target is wide and uniform.
摘要翻译： 提供了一种磁控管阴极和包括该磁控管阴极的溅射装置。 磁控管阴极包括三个或更多个磁体单元，每个磁体单元包括单个磁体或具有朝向相同方向的相同磁极的多个磁体，其中一个磁体单元围绕另一个磁体单元的外圆周设置，并且相邻的磁体单元 具有朝向相同方向的相对极。 获得均匀的磁场分布。 因此，目标的侵蚀特征是宽而均匀的。
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公开(公告)号：US07252716B2
公开(公告)日：2007-08-07
申请号：US10713258
申请日：2003-11-17
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00
CPC分类号： C23C16/4558
摘要： A gas injection apparatus for injecting a reactive gas into a reaction chamber of a semiconductor processing system includes an injector in contact with an inner surface of a wall of the reaction chamber. The injector has a plurality of nozzles through which the reactive gas is injected into the reaction chamber. A gas inlet penetrates the wall of the reaction chamber. A manifold is disposed between the wall of the reaction chamber and the injector, and supplies the reactive gas flowing through the gas inlet to the nozzles. Gas channels in the manifold are arranged on a plurality of levels to equalize the lengths of gas paths connecting the gas inlet to each of the plurality of nozzles. This configuration makes the flow rate of reactive gas supplied through each of the plurality of nozzles to the reaction chamber uniform.
摘要翻译： 用于将反应性气体注入半导体处理系统的反应室的气体注入装置包括与反应室的壁的内表面接触的喷射器。 喷射器具有多个喷嘴，反应气体通过喷嘴喷射到反应室中。 气体入口穿透反应室的壁。 歧管设置在反应室的壁和喷射器之间，并将流过气体入口的反应气体供应到喷嘴。 歧管中的气体通道布置在多个水平面上以均衡连接到多个喷嘴中的每一个喷嘴的气体入口的气体路径的长度。 这种构造使得通过多个喷嘴中的每一个喷射到反应室的反应气体的流量均匀。
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3.发明授权公开(公告)号：US07404879B2
公开(公告)日：2008-07-29
申请号：US10932076
申请日：2004-09-02
CPC分类号： H01J37/321 , C23C14/358 , H01J37/3408
摘要： Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.1 mtorr, and to produce high density plasma with high efficiency compared to a conventional IPVD apparatus. Accordingly, a high efficiency of ionization of deposition material is achieved.
摘要翻译： 提供了一种具有螺旋自谐振线圈的电离物理气相沉积（IPVD）装置。 IPVD装置包括具有支撑待处理基板的基板保持器的处理室，将要沉积在基板上的材料供给到面向基板保持器的处理室中的沉积材料源，注入单元 将处理气体进入处理室，向衬底保持器施加偏置电位的偏压电源，产生用于离子化处理室中的沉积材料的等离子体的螺旋自谐振线圈，螺旋自谐振线圈的一端 接地并且另一端电气打开，以及RF发生器，用于向螺旋自谐振线圈提供RF功率。 螺旋自谐振线圈的使用使得IPVD装置能够在非常低的室压力（例如约0.1mtorr）下点燃和操作，并且与传统的IPVD装置相比，可以高效率地产生高密度等离子体。 因此，实现了沉积材料的高效离子化。
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公开(公告)号：US07210424B2
公开(公告)日：2007-05-01
申请号：US10843430
申请日：2004-05-12
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/321
摘要： A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. A reaction gas injection device injects a reaction gas into an interior of the processing chamber. An inductively coupled plasma (ICP) antenna, which is installed on a center of the dielectric window, transfers radio frequency (RF) power from an RF power supply to the interior of the processing chamber. A waveguide guides a microwave generated by a microwave generator. A circular radiative tube, which is installed on the dielectric window around the ICP antenna and is connected to the waveguide, radiates a microwave toward the interior of the processing chamber via a plurality of slots formed through a bottom wall of the radiative tube.
摘要翻译： 高密度等离子体处理设备包括处理室，其具有用于支撑待处理物体的基座，以及位于处理室上的介电窗口，以形成处理室的上表面。 反应气体注入装置将反应气体注入到处理室的内部。 安装在电介质窗口的中心的电感耦合等离子体（ICP）天线将射频（RF）功率从RF电源传送到处理室的内部。 波导引导微波发生器产生的微波。 安装在ICP天线周围的电介质窗口并连接到波导的圆形辐射管通过经由辐射管的底壁形成的多个狭槽向处理室的内部辐射微波。
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5.发明授权公开(公告)号：US07740738B2
公开(公告)日：2010-06-22
申请号：US10748277
申请日：2003-12-31
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321
摘要： An inductively coupled antenna for installation on a reaction chamber of an inductively coupled plasma (ICP) processing apparatus and for connection to a radio frequency (RF) power source to induce an electric field for ionizing a reactant gas injected into the reaction chamber and for generating plasma includes a coil having a plurality of turns including an outermost turn and a plurality of inner turns, wherein a current flowing through the outermost turn is larger than a current flowing through the plurality of inner turns. The outermost turn and the inner turns are connected to the RF power supply in parallel and the inner turns are connected to each other in series. The inductively coupled antenna further includes a conductive metal tube that has a cooling path and a conductive metal strip that is electrically and thermally connected to a lower portion of the metal tube.
摘要翻译： 一种电感耦合天线，用于安装在电感耦合等离子体（ICP）处理装置的反应室上，并用于连接到射频（RF）电源，以诱发用于电离注入反应室的反应气体的电场并产生 等离子体包括具有多个匝的线圈，其包括最外匝和多匝，其中流过最外匝的电流大于流过多个内匝的电流。 最外圈和内圈与RF电源并联连接，内圈相互串联连接。 电感耦合天线还包括导电金属管，该导电金属管具有电连接和热连接到金属管的下部的导电金属带。
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公开(公告)号：US06835919B2
公开(公告)日：2004-12-28
申请号：US10259393
申请日：2002-09-30
IPC分类号： H05B102
CPC分类号： H01J37/321 , H01J37/32357
摘要： An inductively coupled plasma apparatus is provided, wherein the inductively coupled plasma apparatus includes a process chamber having a wafer susceptor on which a substrate is installed, a top plasma source chamber which is installed on the process chamber, a reactor, which is installed in the top plasma source chamber, having a channel through which a gas flows, wherein the reactor supplies plasma reaction products to the process chamber, an inductor, having two ends, is installed between the top plasma source chamber and the reactor and is wound around the reactor, an opening which is positioned within a circumferential space in which the inductor is installed between the reactor and the process chamber, and a shutter operable to open and close the opening. Thus, a uniform radial distribution of radicals emanating from a plasma source can be improved.
摘要翻译： 提供一种电感耦合等离子体装置，其中感应耦合等离子体装置包括具有晶片基座的处理室，基板安装在基板上，安装在处理室上的顶部等离子体源室，安装在该处理室中的反应器 顶部等离子体源室具有气体流过的通道，其中反应器向处理室供应等离子体反应产物，具有两端的电感器安装在顶部等离子体源室和反应器之间，并缠绕在反应器 位于电感器安装在反应器和处理室之间的圆周空间内的开口以及可操作以打开和关闭开口的快门。 因此，可以提高从等离子体源发出的自由基的均匀径向分布。
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公开(公告)号：US06966952B2
公开(公告)日：2005-11-22
申请号：US10910417
申请日：2004-08-04
申请人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
发明人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
CPC分类号： C23C14/505 , C23C14/243 , H01L21/68707
摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.
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公开(公告)号：US08632855B2
公开(公告)日：2014-01-21
申请号：US12656823
申请日：2010-02-17
申请人： Xianyu Wenxu , Dong-joon Ma , Jung-hyun Lee
发明人： Xianyu Wenxu , Dong-joon Ma , Jung-hyun Lee
CPC分类号： H05B3/145 , H05B2214/04
摘要： Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet.
摘要翻译： 提供了制备碳基片材的方法，所述方法包括通过对包含含碳材料的基材进行退火处理，将基材上的含碳材料对准并在基板上形成碳基片材。 碳基片可以是石墨烯片。
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公开(公告)号：US08445366B2
公开(公告)日：2013-05-21
申请号：US12457916
申请日：2009-06-25
申请人： Jung-hyun Lee , Jong-min Kim , Dong-joon Ma , Chang-soo Lee
发明人： Jung-hyun Lee , Jong-min Kim , Dong-joon Ma , Chang-soo Lee
IPC分类号： H01L21/428 , H01L21/477
CPC分类号： H01L21/02689 , H01J37/317 , H01J2237/3156 , H01J2237/316 , H01L21/02532
摘要： Electron beam annealing apparatuses for annealing a thin layer on a substrate and annealing methods using the apparatuses are provided. The electron beam annealing apparatuses may include an electron beam scanning unit that may scan a pulsed electron beam onto a substrate.
摘要翻译： 提供了用于退火衬底上的薄层的电子束退火装置和使用该装置的退火方法。 电子束退火装置可以包括可以将脉冲电子束扫描到衬底上的电子束扫描单元。
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公开(公告)号：US20050205920A1
公开(公告)日：2005-09-22
申请号：US11070090
申请日：2005-03-03
申请人： Sang-hun Jeon , Chung-woo Kim , Dong-joon Ma , Sung-kyu Choi
发明人： Sang-hun Jeon , Chung-woo Kim , Dong-joon Ma , Sung-kyu Choi
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/28 , H01L21/316 , H01L27/10 , H01L27/108 , H01L27/115 , H01L29/51 , H01L29/788 , H01L29/792 , H01L31/119
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02181 , H01L21/022 , H01L21/28282 , H01L21/31616 , H01L21/31645 , H01L28/56 , H01L29/513 , H01L29/792
摘要： A SONOS type memory includes a semiconductor substrate, first and second impurity regions in the semiconductor substrate doped with impurity ions of a predetermined conductivity, separated a predetermined distance from each other, a channel region between the first and second impurity regions, and a data storage type stack on the semiconductor substrate between the first and second impurity regions. The data storage type stack includes a tunneling oxide layer, a memory node layer for storing data, a blocking oxide layer, and an electrode layer, which are sequentially formed. A dielectric constant of the memory node layer is higher than dielectric constants of the tunneling and the blocking oxide layers, and a band offset of the memory node layer is lower than band offsets of the tunneling and the blocking oxide layers. The tunneling oxide layer and the blocking oxide layer are high dielectric insulating layers.
摘要翻译： SONOS型存储器包括半导体衬底，掺杂有预定电导率的杂质离子的半导体衬底中的第一和第二杂质区，彼此隔开预定距离，第一和第二杂质区之间的沟道区，以及数据存储 在第一和第二杂质区之间的半导体衬底上。 数据存储型堆叠包括依次形成的隧道氧化物层，用于存储数据的存储节点层，阻挡氧化物层和电极层。 存储节点层的介电常数高于隧道和阻塞氧化物层的介电常数，并且存储器节点层的带偏移低于隧道和阻塞氧化物层的带偏移。 隧道氧化物层和阻挡氧化物层是高介电绝缘层。
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