摘要:
A method for manufacturing a capacitor embedded in a PCB includes: preparing a copper clad lamination (CCL) substrate having a reinforcement member and copper foils formed on both surfaces of the reinforcement member; planarizing surfaces of the copper foils of the CCL substrate; forming a dielectric layer on the planarized surface of the copper foils; and forming a top electrode on the dielectric layer.
摘要:
A method for manufacturing a capacitor embedded in a PCB includes: preparing a copper clad lamination (CCL) substrate having a reinforcement member and copper foils formed on both surfaces of the reinforcement member; planarizing surfaces of the copper foils of the CCL substrate; forming a dielectric layer on the planarized surface of the copper foils; and forming a top electrode on the dielectric layer.
摘要:
In a method for manufacturing a printed circuit board with a thin film capacitor embedded therein, a conductive metal is sputtered via a first mask to form a lower electrode. A dielectric material is sputtered via a second mask to form a dielectric layer. The conductive metal is sputtered via a third mask to form an upper electrode. An insulating layer is stacked on a stack body with the upper electrode formed therein and via holes are perforated from a top surface of the insulating layer to a top surface of the lower electrode and from the top surface of the insulating layer to a top surface of the upper electrode formed on the substrate. Also, the stack body with the via holes formed therein is electrolytically and electrolessly plated.
摘要:
In a method for manufacturing a printed circuit board with a thin film capacitor embedded therein, a conductive metal is sputtered via a first mask to form a lower electrode. A dielectric material is sputtered via a second mask to form a dielectric layer. The conductive metal is sputtered via a third mask to form an upper electrode. An insulating layer is stacked on a stack body with the upper electrode formed therein and via holes are perforated from a top surface of the insulating layer to a top surface of the lower electrode and from the top surface of the insulating layer to a top surface of the upper electrode formed on the substrate. Also, the stack body with the via holes formed therein is electrolytically and electrolessly plated.
摘要:
Disclosed herein are a coating solution for the formation of a dielectric thin film and a method for the formation of a dielectric thin film using the coating solution. The coating solution comprises a titanium alkoxide, a β-diketone or its derivative, and a benzoic acid derivative having an electron donating group. The method comprises spin coating the coating solution on a substrate to form a thin film and drying the thin film at a low temperature to crystallize the thin film. The titanium-containing coating solution is highly stable. In addition, the coating solution enables formation of a thin film, regardless of the kind of substrates, and can be used to form dielectric thin films in an in-line mode in the production processes of PCBs.
摘要:
Disclosed herein are a coating solution for the formation of a dielectric thin film and a method for the formation of a dielectric thin film using the coating solution. The coating solution comprises a titanium alkoxide, a β-diketone or its derivative, and a benzoic acid derivative having an electron donating group. The method comprises spin coating the coating solution on a substrate to form a thin film and drying the thin film at a low temperature to crystallize the thin film. The titanium-containing coating solution is highly stable. In addition, the coating solution enables formation of a thin film, regardless of the kind of substrates, and can be used to form dielectric thin films in an in-line mode in the production processes of PCBs.
摘要:
Disclosed herein are a coating solution for the formation of a dielectric thin film and a method for the formation of a dielectric thin film using the coating solution. The coating solution comprises a titanium alkoxide, a β-diketone or its derivative, and a benzoic acid derivative having an electron donating group. The method comprises spin coating the coating solution on a substrate to form a thin film and drying the thin film at a low temperature to crystallize the thin film. The titanium-containing coating solution is highly stable. In addition, the coating solution enables formation of a thin film, regardless of the kind of substrates, and can be used to form dielectric thin films in an in-line mode in the production processes of PCBs.
摘要:
Disclosed herein are a coating solution for the formation of a dielectric thin film and a method for the formation of a dielectric thin film using the coating solution. The coating solution comprises a titanium alkoxide, a β-diketone or its derivative, and a benzoic acid derivative having an electron donating group. The method comprises spin coating the coating solution on a substrate to form a thin film and drying the thin film at a low temperature to crystallize the thin film. The titanium-containing coating solution is highly stable. In addition, the coating solution enables formation of a thin film, regardless of the kind of substrates, and can be used to form dielectric thin films in an in-line mode in the production processes of PCBs.
摘要:
The present invention relates to a method of fabricating a printed circuit board having embedded multi-layer passive devices, and particularly, to a method of fabricating a printed circuit board having an embedded multi-layer capacitor, in which a capacitor is formed to have multiple layers in the PCB to increase capacitance.
摘要:
A method of manufacturing a circuit board embedding a thin film capacitor, the method including: forming a sacrificial layer on a first substrate; forming a dielectric layer on the sacrificial layer; forming a first electrode layer on the dielectric layer; disposing the first substrate on the second substrate in such a way that the first electrode layer is bonded to a top of a second substrate; decomposing the sacrificial layer by irradiating a laser beam onto the sacrificial layer through the first substrate; separating the first substrate from the second substrate; and forming a second electrode layer on the dielectric layer.