摘要:
Provided is a wafer-level image sensor module including a wafer; an image sensor mounted on the wafer; a transparent member installed above the top surface of the wafer so as to seal the image sensor; a plurality of vias formed in the wafer so as to be positioned outside the transparent member; a plurality of upper pads formed on the upper ends of the respective vias; an encapsulation portion formed on the top surface of the wafer so as to be positioned outside the transparent member; and a plurality of external connection members that are electrically connected to the lower ends of the respective vias.
摘要:
A wafer-level image sensor module including: a wafer having an image sensor and a plurality of upper pads provided thereon, the wafer having an inclined surface on either side thereof; a transparent member installed above the top surface of the wafer so as to seal the image sensor; a plurality of lead portions having one ends connected to the respective upper pads, the lead portions being formed to extend to the bottom surface of the wafer along the inclined surface of the wafer; an encapsulation portion formed on the top surface of the wafer so as to be positioned outside the transparent member; and a plurality of external connection members that are electrically connected to the other ends of the respective lead portions
摘要:
Provided is a method for manufacturing a semiconductor package. In the method, a wafer for a cap substrate is provided. The wafer for the cap substrate includes a plurality of vias and via electrodes on a lower surface. A wafer for a device substrate is provided. The wafer for the device substrate includes a circuit unit and a connection electrode on an upper surface. The wafer for the cap substrate and the wafer for the device substrate are primarily bonded by a medium of a primary adhesive. A trench is formed to expose the upper surface of the wafer for the device substrate to an outside along an outer edge of the primary adhesive. A secondary bonding operation is performed by a medium of a secondary adhesive to electrically connect the via electrode and the connection electrode. The wafer for the device substrate is diced along a virtual cut line.
摘要:
Provided is a method for manufacturing a semiconductor package. In the method, a wafer for a cap substrate is provided. The wafer for the cap substrate includes a plurality of vias and via electrodes on a lower surface. A wafer for a device substrate is provided. The wafer for the device substrate includes a circuit unit and a connection electrode on an upper surface. The wafer for the cap substrate and the wafer for the device substrate are primarily bonded by a medium of a primary adhesive. A trench is formed to expose the upper surface of the wafer for the device substrate to an outside along an outer edge of the primary adhesive. A secondary bonding operation is performed by a medium of a secondary adhesive to electrically connect the via electrode and the connection electrode. The wafer for the device substrate is diced along a virtual cut line.
摘要:
The present invention relates to a stacked wafer level package and a method of manufacturing the same. The stacked wafer level package in accordance with the present invention can improve a misalignment problem generated in a stacking process by performing a semiconductor chip mounting process, a rearrangement wiring layer forming process, the stacking process and so on after previously bonding internal connection means for interconnection between stacked electronic components to a conductive layer for forming a rearrangement wiring layer, thereby improving reliability and yield and reducing manufacturing cost.
摘要:
The present invention relates to a stacked wafer level package and a method of manufacturing the same. The stacked wafer level package in accordance with the present invention can improve a misalignment problem generated in a stacking process by performing a semiconductor chip mounting process, a rearrangement wiring layer forming process, the stacking process and so on after previously bonding internal connection means for interconnection between stacked electronic components to a conductive layer for forming a rearrangement wiring layer, thereby improving reliability and yield and reducing manufacturing cost.