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49 条记录 (耗时 0.016 秒)

    Communicating an address to a memory device
    1.
    发明申请
    Communicating an address to a memory device 审中-公开
    将地址通信到存储设备

    公开(公告)号：US20060129701A1

    公开(公告)日：2006-06-15

    申请号：US11012316

    申请日：2004-12-15

    申请人： Shekoufeh Qawami ,  Mark Leinwander ,  Mark Fullerton

    发明人： Shekoufeh Qawami ,  Mark Leinwander ,  Mark Fullerton

    IPC分类号： G06F3/00

    CPC分类号： G11C5/066

    摘要： A technique includes sharing common external terminals of a memory device to communicate data and an address with the memory device for a given memory operation. Different sets of address bits indicative of the address are communicated over the common external terminals at different times.

    摘要翻译： 一种技术包括共享存储器设备的公共外部终端以与给定存储器操作的存储器设备通信数据和地址。 指示地址的不同地址位组在不同的时间通过公共外部终端进行通信。

    Protection of security key information
    7.
    发明申请
    Protection of security key information 审中-公开
    保护安全关键信息

    公开(公告)号：US20070247182A1

    公开(公告)日：2007-10-25

    申请号：US11395871

    申请日：2006-03-31

    申请人： Timothy Beatty ,  Mark Fullerton ,  Tom Mozdzen

    发明人： Timothy Beatty ,  Mark Fullerton ,  Tom Mozdzen

    IPC分类号： H03K19/00

    CPC分类号： G06F21/76 ,  G06F21/71 ,  G11C17/16 ,  G11C17/18

    摘要： A protection circuit is disclosed, for preventing access to stored security key data after the security key is no longer used. The protection circuit performs operations on a programming circuit used to program a bit of the security key. The protection circuit prevents inspection of the security key bit, using several techniques. Subsequent inspection of the programming circuit does not reveal the value of the security key bit.

    摘要翻译： 公开了一种用于在不再使用安全密钥之后防止对存储的安全密钥数据的访问的保护电路。 保护电路对用于编程安全密钥位的编程电路进行操作。 保护电路使用几种技术来防止对安全密钥位的检查。 对编程电路的后续检查不会显示安全密钥位的值。

    Integrated circuit with pre-heating for reduced subthreshold leakage
    9.
    发明授权
    Integrated circuit with pre-heating for reduced subthreshold leakage 有权
    具有预热功能的集成电路可降低亚阈值泄漏

    公开(公告)号：US08575993B2

    公开(公告)日：2013-11-05

    申请号：US13247694

    申请日：2011-09-28

    申请人： Paul Penzes ,  Mark Fullerton

    发明人： Paul Penzes ,  Mark Fullerton

    IPC分类号： H01L35/00

    CPC分类号： H03L7/0802 ,  G06F1/26 ,  G06F1/32 ,  G06F1/3203 ,  G06F1/3228 ,  G06F12/14 ,  G06F21/44 ,  H01L2924/0002 ,  H03K3/0315 ,  H03K3/037 ,  H03K3/0375 ,  H03K5/133 ,  H03K19/01 ,  H03K2005/00019 ,  H03K2005/00026 ,  H03K2005/00058 ,  H03L7/097 ,  H03L7/0997 ,  H01L2924/00

    摘要： Certain semiconductor processes provide for the use of multiple different types of transistors with different threshold voltages in a single IC. It can be shown that in certain ones of these semiconductor processes, the speed at which high threshold transistors can operate at decreases with decreasing temperature. Thus, the overall processing speed of an IC that implements high threshold transistors is often limited by the lowest temperature at which the IC is designed (or guaranteed) to properly function. Embodiments of a system and method that overcome this deficiency by “pre-heating” the IC (or at least portions of the IC that implement the high threshold transistors) such that the IC can operate at a frequency (once pre-heated) higher than what would otherwise be possible for a given, minimum temperature at which the IC is designed (or guaranteed) to properly function at are provided.

    摘要翻译： 某些半导体工艺提供在单个IC中使用具有不同阈值电压的多种不同类型的晶体管。 可以看出，在这些半导体工艺中的某些中，高阈值晶体管可以运行的速度随着温度的降低而降低。 因此，实现高阈值晶体管的IC的总体处理速度通常受IC设计（或保证）以适当地起作用的最低温度的限制。 通过“预热”IC（或实现高阈值晶体管的IC的至少部分）来克服这种缺陷的系统和方法的实施例，使得IC可以以高于 在设计（或保证）设计IC（或保证）的给定最低温度下，将提供适当的功能。

    Integrated Circuit With Pre-Heating For Reduced Subthreshold Leakage
    10.
    发明申请
    Integrated Circuit With Pre-Heating For Reduced Subthreshold Leakage 有权
    具有预热的集成电路，以减少亚阈值泄漏

    公开(公告)号：US20130043927A1

    公开(公告)日：2013-02-21

    申请号：US13247694

    申请日：2011-09-28

    申请人： Paul PENZES ,  Mark Fullerton

    发明人： Paul PENZES ,  Mark Fullerton

    IPC分类号： H03K3/011

    CPC分类号： H03L7/0802 ,  G06F1/26 ,  G06F1/32 ,  G06F1/3203 ,  G06F1/3228 ,  G06F12/14 ,  G06F21/44 ,  H01L2924/0002 ,  H03K3/0315 ,  H03K3/037 ,  H03K3/0375 ,  H03K5/133 ,  H03K19/01 ,  H03K2005/00019 ,  H03K2005/00026 ,  H03K2005/00058 ,  H03L7/097 ,  H03L7/0997 ,  H01L2924/00

    摘要： Certain semiconductor processes provide for the use of multiple different types of transistors with different threshold voltages in a single IC. It can be shown that in certain ones of these semiconductor processes, the speed at which high threshold transistors can operate at decreases with decreasing temperature. Thus, the overall processing speed of an IC that implements high threshold transistors is often limited by the lowest temperature at which the IC is designed (or guaranteed) to properly function. Embodiments of a system and method that overcome this deficiency by “pre-heating” the IC (or at least portions of the IC that implement the high threshold transistors) such that the IC can operate at a frequency (once pre-heated) higher than what would otherwise be possible for a given, minimum temperature at which the IC is designed (or guaranteed) to properly function at are provided.

    摘要翻译： 某些半导体工艺提供在单个IC中使用具有不同阈值电压的多种不同类型的晶体管。 可以看出，在这些半导体工艺中的某些中，高阈值晶体管可以运行的速度随着温度的降低而降低。 因此，实现高阈值晶体管的IC的总体处理速度通常受IC设计（或保证）以适当地起作用的最低温度的限制。 通过预热IC（或实现高阈值晶体管的IC的至少一部分）来克服这种缺陷的系统和方法的实施例，使得IC可以以比将被加热的频率高（一次预热） 否则可能在设计（或保证）IC的给定最低温度下提供正确的功能。