摘要:
A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 μm3 or more in an amount of 0.03 vol % or less.
摘要:
A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 μm3 or more in an amount of 0.03 vol % or less.
摘要:
A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.
摘要翻译:包括In,Ga和Mg的烧结体的溅射靶,所述烧结体包含一种或多种选自In2O3,In(GaMg)O4表示的化合物,由Ga2MgO4表示的化合物和由 InMgO 4,原子比In /(In + Ga + Mg)为0.5以上且0.9999以下,原子比(Ga + Mg)/(In + Ga + Mg)为0.0001以上且0.5以下。
摘要:
An oxide sintered body including an oxide of indium (In), gallium (Ga), and positive trivalent and/or positive tetravalent metal X, wherein the amount of the metal X relative to the total amount of In and Ga is 100 to 10000 ppm (weight).
摘要:
A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.
摘要翻译:包括In,Ga和Mg的烧结体的溅射靶,所述烧结体包含一种或多种选自In2O3,In(GaMg)O4表示的化合物,由Ga2MgO4表示的化合物和由 InMgO 4,原子比In /(In + Ga + Mg)为0.5以上且0.9999以下,原子比(Ga + Mg)/(In + Ga + Mg)为0.0001以上且0.5以下。
摘要:
A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 μm or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.
摘要:
A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 μm or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.
摘要:
An oxide sintered body including indium oxide of which the crystal structure substantially includes a bixbyite structure, wherein gallium atoms are solid-saluted in the indium oxide, and an atomic ratio Ga/(Ga+In) is 0.10 to 0.15.