摘要:
The method for preparation of sintered permanent magnets according to the present invention comprises the steps of: mixing fully fine powder of a crystalline mother alloy for permanent magnet containing a rare-earth element, Fe and B as the essential components with fine powder of zinc oxide, compaction molding the resulted mixture in the presence of a magnetic field, sintering the compacted mixture in vacuum to cause generation of oxygen and metallic zinc by thermal decomposition of the zinc oxide; segregation of a part of metallic component in the mother alloy at the boundary and inside of the mother alloy crystal; formation of amorphous metallic oxide by forced oxidation of the segregated metal with the generated oxygen; crystallization of the amorphous metallic oxide; formation of an epitaxial junction between the crystallized metallic oxide and the mother alloy crystal; and evaporation of the metallic zinc into the vacuum, and quenching the sintered compact.
摘要:
The object of the invention is to provide a composition for permanent magnet with excellent magnetic properties exhibiting well the latent ability of the RFeB system tetragonal compounds. The composition for permanent magnet according to the present invention is a complex of (1) a crystalline RFeB or RFeCoB system compound having a tetragonal crystal structure with lattice constants of a.sub.o about 8.8 .ANG. and c.sub.o about 12 .ANG., in which R is at least one of rare earth elements, and (2) a crystalline neodymium oxide having a cubic crystal structure, in which both crystal grains are epitaxially connected and the RFeB or RFeCoB crystal grains are oriented to the c.sub.o direction. The lattice constant a.sub.o of the cubic Nd.sub.2 O.sub.3 is about 4.4 .ANG. which is the half length of the lattice constant a.sub.o about 8.8 .ANG. for the RFeB or RFeCoB tetragonal crystal, and the epitaxial connection is achieved, and the RFeB or RFeCoB crystal grains are oriented to the c.sub.o direction.
摘要:
The present invention is directed to provide a method of preparing a raw material powder for permanent magnets superior in moldability, especially in moldability and productivity of bonded magnets. The method comprises subjecting an acicular iron powder having an aspect ratio of not smaller than 5:1 to heating at 800-900.degree. C. in fluidized state with a gas stream containing no oxygen until the acicular iron powder is transformed into a columnar shape iron powder having an aspect ratio of not larger than 3:1, a die-like shape iron powder or a spherical shape iron powder. The acicular iron powder may contain or may be attached by such a component effective for improving magnetic properties as a rare earth element metal, a rare earth element metal oxide, boron, cobalt and nickel.
摘要:
The present invention is directed to provide a method of preparing a raw material powder for permanent magnets superior in moldability, especially in moldability and productivity of bonded magnets. The method comprises subjecting an acicular iron powder having an aspect ratio of not smaller than 5:1 to heating at 800.degree.-900.degree. C. in fluidized state with a gas stream containing no oxygen until the acicular iron powder is transformed into a columnar shape iron powder having an aspect ratio of not larger than 3:1, a die-like shape iron powder or a spherical shape iron powder. The acicular iron powder may contain or may be attached by such a component effective for improving magnetic properties as a rare earth element metal, a rare earth element metal oxide, boron, cobalt and nickel.
摘要:
The present invention is directed to provide a raw material powder for modified permanent magnets capable of enhancing magnetic properties of iron.rare earth element metal.boron permanent magnets and reducing the production cost, and further to provide its production method. The raw material powder is a pulverized powder of sintered mass obtained by sintering in vacuum or in a non-oxidative gas a mixture of an acicular iron powder and an alloy powder containing iron, a rare earth element metal and boron.
摘要:
An electronic device includes a semiconductor substrate, an insulating material-filled layer and a vertical conductor. The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 1014 Ω·cm at room temperature and a relative permittivity of 4 to 9. The vertical conductor is a solidified metal body filled in an area surrounded by the insulating material-filled layer.
摘要:
The present invention provides nanometer-size spherical particles. Each of the particles is made of at least one selected from the group consisting of a metal, an alloy, and a metal compound. The particles include one or both of a polycrystalline region and a single-crystalline region. The particles have a particle size of less than 1 μm; and a sphericity of −10% to +10%.
摘要:
An electronic device includes a plurality of stacked substrates. Each of the substrates includes a semiconductor substrate, a columnar conductor, and a ring-shaped insulator. The columnar conductor extends along a thickness direction of the semiconductor substrate. The ring-shaped insulator includes an inorganic insulating layer mainly composed of a glass. The inorganic insulating layer fills a ring-shaped groove that is provided in the semiconductor substrate to surround the columnar conductor.
摘要:
A filling material includes a support base member and a metal layer, the metal layer including a first metal layer and a second metal layer and being disposed on one side of the support base member, the first metal layer being an aggregate of nano metal particles and having a film thickness enabling melting at a temperature lower than a melting point, the second metal layer being an aggregate of metal particles having a lower melting point than the first metal layer.
摘要:
An electronic device includes a semiconductor substrate, an insulating material-filled layer and a vertical conductor. The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 1014 Ω·cm at room temperature and a relative permittivity of 4 to 9. The vertical conductor is a solidified metal body filled in an area surrounded by the insulating material-filled layer.