摘要:
A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 μm in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.
摘要:
A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 μm in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.
摘要:
A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 μm in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.
摘要:
A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 μm in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.
摘要:
A battery separator favorably employable for lithium secondary battery comprises at least one porous film in which 100 to 40,000 ppm of particles of silicon dioxide, aluminum oxide, magnesium oxide, zinc oxide or metal oxides containing at least two metal elements selected from the group consisting of Si, Al, Mg and Zn having a mean diameter of 0.1 to 10 &mgr;m are dispersed in a porous resin matrix.
摘要:
Disclosed are: a gene transduction method for use in the induction of the differentiation of stem cells such as ES cells or iPS cells into hepatocytes effectively; stem cells into each of which a gene useful for the induction of the differentiation into hepatocytes is introduced; and hepatocytes produced from stem cells each having the gene introduced therein. A specific gene can be introduced into stem cells such as ES cells or iPS cells using an adenovirus vector. The effective induction of the differentiation into hepatocytes can be achieved by introducing the gene. Specifically, the effective induction of the differentiation of stem cells such as ES cells or iPS cells into hepatocytes can be achieved by introducing at least one gene selected from HEX gene, HNF4A gene, HNF6 gene and SOX17 gene into the stem cells.
摘要:
A separator is disclosed which enables to inject a non-aqueous electrolytic solution easily during production of batteries such as lithium ion secondary batteries and also enables to produce a battery which is excellent in various battery performances.The battery separator comprises a long porous film in which plural non-porous linear regions are arranged in a width direction of the film, at least one surface of the linear regions being a concave or convex surface is advantageously used as a battery separator for lithium secondary batteries or the like.
摘要:
A packing band having a superior weld is disclosed. The band can be made of a stretched thermoplastic resin having a flat cross section. The weld is formed by overlapping ends of the band extending in the lengthwise direction thereof. The weld portion of the band includes a plurality of welded sections separated by at least one non-welded section along the lengthwise direction of the band. The welding of the packing band can be accomplished by overlapping parts of the band in a lengthwise direction thereof; melting discontinuous portions of the parts in a pattern along the length of the band parts of a melted portion, an unmelted portion and a melted portion; and then pressing the parts together so that the melted and unmelted portions of the parts contact each other and form a weld.
摘要:
In accordance with an embodiment, a simulation apparatus includes a two-dimensional section dividing processing unit, a two-dimensional simulator, a one-dimensional combining processing unit, and a three-dimensional shape combining processing unit. The two-dimensional section dividing processing unit divides a three-dimensional shape as a simulation target into at least one set of two-dimensional sections intersecting with each other and defines the three-dimensional shape as the two-dimensional sections. The two-dimensional simulator runs a two-dimensional shape simulation in each time step for each of the two-dimensional sections obtained by the dividing and acquires a two-dimensional shape. The one-dimensional combining processing unit extracts a film configuration for each intersection of the two-dimensional sections from the acquired two-dimensional shape and combines the film configurations to acquire one-dimensional film configurations. The three-dimensional shape combining processing unit creates a three-dimensional structure from the acquired one-dimensional film configurations on the basis of information on the intersection.
摘要:
A semiconductor storage element includes: a semiconductor layer constituted of a line pattern with a predetermined width formed on a substrate; a quantum dot forming an electric charge storage layer formed on the semiconductor layer through a first insulating film serving as a tunnel insulating film; an impurity diffusion layer formed in a surface layer of the semiconductor layer so as to sandwich the quantum dot therebetween; and a control electrode formed on the quantum dot through a second insulating film.