摘要:
A packaging substrate having a chip embedded therein, comprises a first aluminum substrate having a first cavity therein; a second aluminum substrate having a second cavity corresponding to the first cavity; a dielectric layer disposed between the first aluminum substrate and the second aluminum substrate; a chip embedded in the first cavity and the second cavity, having an active surface with a plurality of electrode pads thereon; and one built-up structure disposed on the surface of the first aluminum substrate and the active surface of the chip, wherein the built-up structure has a plurality of conductive vias electrically connecting to the electrode pads. The substrate warpage is obviously reduced by the assistance of using aluminum or aluminum alloy as the material of the substrate. Also, a method of manufacturing a packaging substrate having a chip embedded therein is disclosed.
摘要:
A carrier plate structure having a chip embedded therein, comprises an aluminum plate having plural through-holes extending from the upper surface to the lower surface of the aluminum plate, a cavity therein, and an aluminum oxide layer formed on the surface of the aluminum plate; a chip embedded in the cavity with an active surface having plural electrode pads set thereon; and at least one build-up structure mounted on the surface of the aluminum plate and the active surface of the chip, wherein the build-up structure comprises at least one conductive structure to electrically connecting to the electrode pad. Besides, a method of manufacturing a carrier plate structure having a chip embedded therein is disclosed.
摘要:
A plate structure having a chip embedded therein, comprises an aluminum plate having at least one aluminum oxide layer formed on its surface, and a cavity therein; a chip embedded in the cavity, wherein the chip has an active surface; at least one electrode pad mounted on the active surface; and a build-up structure mounted on the surface of the aluminum plate, the active surface of the chip, and the surface of the electrode pad, wherein the build-up structure comprises at least one conducting to electrically connect to the electrode pad. Besides, a method of manufacturing a plate structure having a chip embedded therein is disclosed. Therefore, the plate structure having a chip embedded therein can be processed by a simple method to achieve the tenacity of aluminum and the rigidity of aluminum oxide.
摘要:
A plate structure having a chip embedded therein, comprises an aluminum plate having at least one aluminum oxide layer formed on its surface, and a cavity therein; a chip embedded in the cavity, wherein the chip has an active surface; at least one electrode pad mounted on the active surface; and a build-up structure mounted on the surface of the aluminum plate, the active surface of the chip, and the surface of the electrode pad, wherein the build-up structure comprises at least one conducting to electrically connect to the electrode pad. Besides, a method of manufacturing a plate structure having a chip embedded therein is disclosed. Therefore, the plate structure having a chip embedded therein can be processed by a simple method to achieve the tenacity of aluminum and the rigidity of aluminum oxide.
摘要:
A plate structure having a chip embedded therein, comprises an aluminum oxide plate having an upper surface, a lower surface, plural aluminum channels connected to the upper surface and the lower surface, and a cavity therein; a chip embedded in the cavity, wherein the chip has an active surface; at least one electrode pad mounted on the active surface; and at least one build-up structure mounted on the surface of the aluminum oxide plate and the active surface of the chip, wherein the build-up structure comprises at least one conductive structure to electrically connect to the electrode pad. Besides, a method of manufacturing a plate structure having a chip embedded therein is disclosed.
摘要:
The present invention relates to a package on package (PoP) structure, which comprises: a first packaging substrate having a plurality of conductive elements on its surface; a second packaging substrate having a plurality of conductive elements on its surface; and a surface-ceramic aluminum plate sandwiched between the first packaging substrate and the second packaging substrate. The surface-ceramic aluminum plate includes plural plated through holes extending through the layer. In addition, the first packaging substrate electrically conducts with the second packaging substrate through these plated through holes. The disclosed structure eliminates the warpage problem of PoP structure, and enhances the strength of PoP structure.
摘要:
A semiconductor chip is disclosed, which comprises a chip having an active surface; plural electrode pads disposed on the active surface of the chip; a first passivation layer disposed on the chip, which has openings corresponding to the electrode pads to expose the electrode pads, wherein the first passivation layer is made of a material having high alkali resistance and low coefficient of elasticity; and plural metal bumps disposed in the openings of the first passivation layer. Therefore, as forming the metal bumps by a chemical deposition technique, the damage to the passivation layer can be prevented. Besides, as the semiconductor chip is embedded in a package structure, the problem of delamination occurred due to the mismatch in the coefficients of thermal expansion of the semiconductor chip and the dielectric layers can be avoided. Accordingly, the yield of the package structure having the semiconductor chip embedded therein can be improved.
摘要:
A package substrate embedded with a semiconductor component includes a substrate, a semiconductor chip, a first dielectric layer, a first circuit layer and first conductive vias. The substrate is formed with an opening for allowing the semiconductor chip to be secured therein. The semiconductor chip has an active surface and an inactive surface, wherein a plurality of electrode pads are formed on the active surface thereof and a passivation layer disposed thereon. The first dielectric layer is disposed both on the substrate and the passivation layer, wherein vias are formed at locations corresponding to those of the electrode pads and penetrating the dielectric layer and the passivation layer to expose the electrode pads therefrom. The first circuit layer is disposed on the first dielectric layer and electrically connected to the first conductive vias. The first conductive vias are disposed in the openings of the dielectric and passivation layers and the first circuit layer is electrically connected to the electrode pads, thereby allowing the first conductive vias to be electrically connected to the electrode pads of the chip.
摘要:
A circuit board structure with embedded electronic components includes: a carrier board having an adhesive layer with two surfaces formed with first and second metal oxide layers covered by first and second metal layers and having at least one through hole; at least one semiconductor chip received in the through hole of the carrier board; an adhesive material filling a gap between the through hole and the semiconductor chip so as to secure the semiconductor chip in position to the through hole; a high dielectric material layer formed outwardly on the second metal layer; and at least one electrode board formed outwardly on the high dielectric material layer such that a capacitance component is formed with the second metal layer, high dielectric material layer, and electrode board. Accordingly, the capacitance component is integrated into the circuit board structure.
摘要:
A package substrate embedded with a semiconductor component is provided. A semiconductor chip is received in a cavity of a substrate body, and has electrode pads on an active surface thereof. A passivation layer is disposed on the active surface and has openings for exposing the electrode pads. An electroless plating metal layer, a first sputtering metal layer and a second sputtering metal layer are sequentially formed on the electrode pads, the openings of the passivation layer and the passivation layer surface around the openings. Contact pads are formed on the second sputtering metal layer. A first dielectric layer is disposed on the substrate body and the passivation layer. A first circuit layer is formed on the first dielectric layer. First conductive vias are formed in the first dielectric layer and electrically connected to the contact pads. The first circuit layer is electrically connected to the first conductive vias.