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    MAGNETO-OPTICAL MATERIAL, FARADAY ROTATOR, AND OPTICAL ISOLATOR
    5.
    发明申请
    MAGNETO-OPTICAL MATERIAL, FARADAY ROTATOR, AND OPTICAL ISOLATOR 有权
    MAGNETO-OPTICAL MATERIAL，FARADAY ROTATOR和OPTICAL ISOLATOR

    公开(公告)号：US20130222909A1

    公开(公告)日：2013-08-29

    申请号：US13877603

    申请日：2011-10-05

    申请人： Shinji Makikawa ,  Toshiaki Watanabe ,  Akio Yamanaka ,  Hirotaka Naruse

    发明人： Shinji Makikawa ,  Toshiaki Watanabe ,  Akio Yamanaka ,  Hirotaka Naruse

    IPC分类号： G02F1/095

    CPC分类号： G02F1/0955 ,  C01F17/0018 ,  C01F17/0043 ,  C01P2002/50 ,  C01P2006/60 ,  C30B13/24 ,  C30B15/08 ,  C30B29/22 ,  G02B1/00 ,  G02F1/0036 ,  H01S3/0064

    摘要： It is an object of the present invention to provide a magneto-optical material containing as a main component an oxide that includes a terbium oxide and having a large Verdet constant at a wavelength in the 1.06 μm region (0.9 to 1.1 μm) and high transparency, and to provide a small-sized optical isolator suitably used in a fiber laser for a processing machine.The magneto-optical material of the present invention contains an oxide represented by Formula (I) below at a content of at least 99 wt %. (TbxR1-x)2O3  (I) (In Formula (I), x satisfies 0.4≦x≦1.0 and R includes at least one element selected from the group consisting of scandium, yttrium, and lanthanoid elements other than terbium.)

    摘要翻译： 本发明的目的是提供一种磁光材料，其包含氧化物作为主要成分，该氧化物包括氧化铽，并且在1.06μm区域（0.9-1.1μm）中的波长处具有较大的Verdet常数，并且高透明度 并且提供适用于用于加工机器的光纤激光器中的小型光隔离器。 本发明的磁光材料含有至少99重量％的由下式（I）表示的氧化物。 （TbxR1-x）2O3（I）（式（I）中，x满足0.4 @ x @ 1.0，R包括选自铽，钇和铽以外的镧系元素中的至少一种元素。

    Method for preparing optical waveguide substrate
    7.
    发明授权
    Method for preparing optical waveguide substrate 失效
    光波导基板的制备方法

    公开(公告)号：US06615614B1

    公开(公告)日：2003-09-09

    申请号：US09610952

    申请日：2000-07-06

    申请人： Shinji Makikawa ,  Shigeru Konishi ,  Seiki Ejima

    发明人： Shinji Makikawa ,  Shigeru Konishi ,  Seiki Ejima

    IPC分类号： C03B1914

    CPC分类号： G02B6/136 ,  G02B6/122 ,  G02B6/132 ,  G02B2006/12038 ,  G02B2006/12061

    摘要： An optical waveguide substrate is prepared by forming grooves in a silicon substrate in accordance with the pattern of a desired waveguide device, thermally oxidizing the silicon substrate to form a peripheral quartz layer surrounding the grooves, burying in the grooves a doped quartz glass layer having a higher refractive index, abrading the surface of the resulting structure to be flat, and forming on the flat surface a glass layer having a lower refractive index. An optical waveguide substrate featuring no distortion of the core pattern, little warp, and a low loss can be produced in a simple manner.

    摘要翻译： 通过根据期望的波导器件的图案在硅衬底中形成沟槽，热氧化硅衬底以形成围绕沟槽的外围石英层来制备光波导衬底，在沟槽中埋设掺杂的石英玻璃层，其具有 更高的折射率，将所得结构的表面研磨成平坦的，并且在平坦表面上形成具有较低折射率的玻璃层。 可以以简单的方式产生不具有芯图案变形，少量翘曲和低损耗的光波导基板。

    Preparation of silicon substrate
    9.
    发明授权
    Preparation of silicon substrate 失效
    硅衬底的制备

    公开(公告)号：US06402973B1

    公开(公告)日：2002-06-11

    申请号：US09627073

    申请日：2000-07-27

    申请人： Yasushi Maeda ,  Masaharu Horiguchi ,  Shinji Makikawa ,  Seiki Ejima

    发明人： Yasushi Maeda ,  Masaharu Horiguchi ,  Shinji Makikawa ,  Seiki Ejima

    IPC分类号： H01L21306

    CPC分类号： G02B6/13 ,  G02B2006/12061 ,  G02B2006/12169 ,  G02B2006/12176

    摘要： A silicon substrate is prepared by furnishing a silicon substrate (10) having a step (11) of at least 5 &mgr;m high on one surface, forming by high pressure heat oxidation an oxide film (12) which is thinner than the step, and removing the oxide film on the higher surface region until the silicon surface is exposed in the higher surface region while leaving the oxide film on the lower surface region. Because of excellent electrical properties, minimized warpage, a substantially constant oxygen concentration, and a definitely ascertainable oxide-silicon boundary, the silicon substrate is suitable for use in optical waveguide devices.

    摘要翻译： 通过在一个表面上提供具有至少5μm高的台阶（11）的硅衬底（10）来制备硅衬底，通过高压热氧化形成比该步骤更薄的氧化膜（12），并除去 在较高的表面区域上的氧化膜直到硅表面暴露在较高的表面区域中，同时将氧化物膜留在下表面区域上。 由于优异的电性能，翘曲最小化，氧浓度基本恒定，以及绝对可确定的氧化物 - 硅界面，所以硅衬底适用于光波导器件。

    Single crystal wafer of lithium tantalate
    10.
    发明授权
    Single crystal wafer of lithium tantalate 失效
    钽酸锂单晶晶片

    公开(公告)号：US4776917A

    公开(公告)日：1988-10-11

    申请号：US22591

    申请日：1987-03-04

    申请人： Masahiro Ogihara ,  Shinji Makikawa ,  Masaaki Iguchi

    发明人： Masahiro Ogihara ,  Shinji Makikawa ,  Masaaki Iguchi

    IPC分类号： C30B29/30 ,  C30B15/00 ,  H01L41/18 ,  H03H9/02 ,  C30B33/00

    CPC分类号： H03H9/02968 ,  C30B15/00 ,  C30B29/30 ,  H01L41/18 ,  H03H9/02559 ,  Y10T29/42

    摘要： The single crystal wafer of lithium tantalate provided by the invention is characterized by the limited range of variation of the value of double refraction which should not exceed .+-.6.times.10.sup.-4 so that the value of the double refraction is given by 4.5.times.10.sup.-3 .+-.6.times.10.sup.-4. When single crystal wafers of lithium tantalate each satisfying the above requirements are used for the manufacture of SAW devices, the devices may have a very small deviation of the SAW sound velocity from the standard value and the range of variation of the SAW sound velocity within a wafer is also very small so that the SAW devices can be manufactured with greatly improved productivity and excellent quality.

    摘要翻译： 由本发明提供的钽酸锂单晶晶片的特征在于双折射值的变化范围不能超过+/- 6×10 -4，使得双折射值由4.5×10 -3 +/- 6x10-4。 当满足上述要求的钽酸锂的单晶晶片用于制造SAW器件时，器件可能具有非常小的SAW声速与标准值的偏差和SAW声速的变化范围 晶片也非常小，使得SAW器件可以以大大提高的生产率和优良的品质制造。