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公开(公告)号：US09147798B2
公开(公告)日：2015-09-29
申请号：US13421402
申请日：2012-03-15
CPC分类号： H01L33/0079 , H01L33/005 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.
摘要翻译： 根据一个实施例，半导体发光元件包括发光元件，其包括包括发光层，反射层，支撑衬底，第一接合电极和第二接合电极的半导体层叠体。 反射层由金属制成，具有与第一表面相对的第一表面和第二表面。 半导体层叠体设置在反射层的第一表面的一侧。 第一接合电极设置在第二表面和支撑基板之间，并且包括朝向支撑基板突出的凸部和在俯视图中设置在凸部周围的底部。 第二接合电极包括嵌合在第一接合电极的凸部中并能够接合支撑基板和第一接合电极的凹部。
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公开(公告)号：US09318664B2
公开(公告)日：2016-04-19
申请号：US13616580
申请日：2012-09-14
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/405 , H01L33/60
摘要： According to one embodiment, a semiconductor light emitting element includes: a support substrate; a bonding layer provided on the support substrate; an LED layer provided on the bonding layer; and a buffer layer softer than the bonding layer. The buffer layer is placed in one of between the support substrate and the bonding layer and between the bonding layer and the LED layer.
摘要翻译： 根据一个实施例，半导体发光元件包括：支撑基板; 设置在所述支撑基板上的接合层; 设置在所述接合层上的LED层; 和比结合层柔软的缓冲层。 缓冲层被放置在支撑衬底和结合层之间以及结合层和LED层之间的一个中。
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公开(公告)号：US20120070958A1
公开(公告)日：2012-03-22
申请号：US13238715
申请日：2011-09-21
申请人： Kazuyoshi Furukawa , Yoshinori Natsume , Yasuhiko Akaike , Shinji Nunotani , Wakana Nishiwaki , Masaaki Ogawa , Toru Kita , Hidefumi Yasuda
发明人： Kazuyoshi Furukawa , Yoshinori Natsume , Yasuhiko Akaike , Shinji Nunotani , Wakana Nishiwaki , Masaaki Ogawa , Toru Kita , Hidefumi Yasuda
IPC分类号： H01L21/762
CPC分类号： H01L21/185 , H01L21/76251 , H01L33/0079
摘要： In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.
摘要翻译： 在本实施方式的半导体装置的制造方法中，在室温下，具有比第一基板的热膨胀系数小的第一基板与第二基板粘合。 然后，第一基板和第二基板被加热，第一基板在比第二基板的温度高的温度下加热。 因此，第一基板和第二基板结合在一起。 第一衬底是包括氮化物基半导体层的蓝宝石衬底或包括磷基半导体层的GaAs衬底。 第二基板是硅衬底，GaAs衬底，Ge衬底或金属衬底。
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公开(公告)号：US08754431B2
公开(公告)日：2014-06-17
申请号：US13412044
申请日：2012-03-05
申请人： Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Kenji Nakamura , Shinji Nunotani , Takanobu Kamakura
发明人： Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Kenji Nakamura , Shinji Nunotani , Takanobu Kamakura
摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.
摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。 第一电极层具有具有通孔的金属部分。 第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。 第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。 第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。 发光层设置在第一和第二半导体层之间。 第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。
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公开(公告)号：US08519411B2
公开(公告)日：2013-08-27
申请号：US12171638
申请日：2008-07-11
申请人： Yukie Nishikawa , Shinji Nunotani
发明人： Yukie Nishikawa , Shinji Nunotani
IPC分类号： H01L27/15
摘要： A semiconductor light emitting device includes an active layer, an electrode formed above the active layer, a current spreading layer formed between the active layer and the electrode, having n-type conductivity, having a larger bandgap energy than the active layer, and spreading electrons injected from the electrode in the plane of the active layer, and a surface processed layer formed on the current spreading layer, having a larger bandgap energy than the active layer, and having an uneven surface region with a large number of concave-convex structures. The electrode is not formed on the uneven surface region. The conduction band edge energy from the Fermi level of the surface processed layer is higher than that of the current spreading layer.
摘要翻译： 半导体发光器件包括有源层，在有源层上形成的电极，形成在有源层和电极之间的电流扩展层，具有n型导电性，具有比有源层更大的带隙能量，并且扩散电子 从有源层的平面中的电极注入，形成在电流扩散层上的表面处理层具有比有源层更大的带隙能量，并且具有大量凹凸结构的不均匀表面区域。 电极不形成在不平坦的表面区域上。 来自表面处理层的费米能级的导带边缘能量高于当前扩散层的能带边缘能量。
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公开(公告)号：US06791117B2
公开(公告)日：2004-09-14
申请号：US10341465
申请日：2003-01-14
IPC分类号： H01L3300
CPC分类号： H01L33/22 , H01L33/105 , H01L33/16
摘要： A semiconductor light emitting device is disclosed, which comprises a substrate, and a multi-layer semiconductor film formed on the substrate, the multi-layer semiconductor film including a plurality of semiconductor layers overlaid on the substrate, the semiconductor layers having a light emission layer for emitting a light, wherein the light is picked up at a first side of the multi-layer semiconductor film, which is a side opposite to the substrate, wherein a pattern having a light pickup surface is formed on a light emitting portion of the multi-layer semiconductor film, the light pickup surface is in a (111) plane or a plane in the vicinity of the (111) plane, and an unevenness is formed on the light pickup surface.
摘要翻译： 公开了一种半导体发光器件，其包括衬底和形成在衬底上的多层半导体膜，所述多层半导体膜包括覆盖在衬底上的多个半导体层，所述半导体层具有发光层 用于发射光，其中所述光在所述多层半导体膜的与所述基板相反的一侧的第一侧拾取，其中具有光拾取表面的图案形成在所述多重半导体膜的发光部分上 光拾取表面在（111）面或（111）面附近的平面中，并且在光拾取表面上形成不均匀性。
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公开(公告)号：US08921887B2
公开(公告)日：2014-12-30
申请号：US13221319
申请日：2011-08-30
申请人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
发明人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
CPC分类号： H01L33/405 , H01L33/38 , H01L2933/0016 , H01L2933/0083
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。
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8.发明申请公开(公告)号：US20120132948A1
公开(公告)日：2012-05-31
申请号：US13229972
申请日：2011-09-12
申请人： Shinji Nunotani , Masaaki Ogawa , Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Takanobu Kamakura
发明人： Shinji Nunotani , Masaaki Ogawa , Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Takanobu Kamakura
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction.
摘要翻译： 根据一个实施例，半导体发光器件包括光发射器，第一和第二电极层，焊盘电极和辅助电极部分。 发射极包括设置在发射极一侧的第一半导体层，设置在发射极的另一侧的第二半导体层以及设置在第一和第二半导体层之间的发光层。 第一电极层设置在第二半导体层的与第一半导体层相反的一侧上，并且包括金属层和贯穿金属层的多个孔。 第二电极层与第一半导体层电连接。 焊盘电极与第一电极层电连接。 辅助电极部分与第一电极层电连续并沿与第一方向正交的第二方向延伸。
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公开(公告)号：US20120056155A1
公开(公告)日：2012-03-08
申请号：US13037990
申请日：2011-03-01
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
CPC分类号： H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.
摘要翻译： 半导体发光器件包括结构体，第一电极层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一半导体层和第二半导体层之间的发光层。 第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。 金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。 多个第一开口部分的圆当量直径不小于10纳米且不超过1微米。 至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。
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公开(公告)号：US5346555A
公开(公告)日：1994-09-13
申请号：US98097
申请日：1993-07-28
CPC分类号： C23C16/463 , C23C16/46 , C30B25/08 , H01L21/67115
摘要： A device for a thermal treatment process and a film forming process includes a chamber for forming a thin-film on a semiconductor substrate under high temperatures, a heater positioned to enclose the outer periphery of the chamber, for heating the inside of the chamber to a high temperature; and insulator positioned to enclose the outer periphery of the heater. The device further has a first space formed between the chamber and the heater, a second space formed between the heater and the insulator, first and second exhaust sections provided for exhausting air from the first and second spaces. In the device, prior to inserting the semiconductor substrate into and removing the semiconductor substrate from the chamber, high temperature air is exhausted from the first and second spaces by the first and second exhaust sections, respectively, to cool inside of the chamber.
摘要翻译： 用于热处理工艺和成膜工艺的装置包括：用于在高温下在半导体衬底上形成薄膜的腔室，设置成包围腔室外周的加热器，用于将腔室内部加热到 高温; 绝缘体被定位成包围加热器的外周。 所述装置还具有形成在所述室和所述加热器之间的第一空间，形成在所述加热器和所述绝缘体之间的第二空间，设置成用于从所述第一空间和所述第二空间排出空气的第一和第二排气部。 在该装置中，在将半导体衬底插入室内并从半导体衬底移除之前，高温空气分别通过第一和第二排气部分从第一和第二空间排出，以在室内部冷却。
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