FILM FORMING APPARATUS, FILM FORMING METHOD AND STORAGE MEDIUM
    1.
    发明申请
    FILM FORMING APPARATUS, FILM FORMING METHOD AND STORAGE MEDIUM 审中-公开
    电影成型设备,成膜方法和储存介质

    公开(公告)号:US20120171365A1

    公开(公告)日:2012-07-05

    申请号:US13395683

    申请日:2010-08-27

    IPC分类号: B05D5/12 C23C16/52 C23C16/46

    摘要: The film forming apparatus includes a chamber 1; a heater 5 for heating a wafer W within the chamber 1; a film forming source vessel 31, provided outside the chamber 1, for accommodating cobalt carbonyl as a film forming source; a line 43 for transporting gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1; an exhaust device 23 for depressurizing and exhausting an inside of the chamber 1; a cobalt carbonyl supply unit 38 for supplying the gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1 via the line 43; a temperature controller 60 for controlling temperatures of the film forming source vessel 31 and the line 43 to be below a decomposition starting temperature of the cobalt carbonyl; and a CO gas supply unit 37 for supplying a CO gas into the film forming source vessel 31.

    摘要翻译: 成膜装置包括:室1; 用于加热室1内的晶片W的加热器5; 成膜源容器31,设置在室1的外部,用于容纳羰基钴作为成膜源; 用于将气态钴羰基从成膜源容器31输送到腔室1的管线43; 用于对室1内部进行减压排气的排气装置23; 用于经由管线43将气态钴羰基从成膜源容器31供应到室1的羰基钴供应单元38; 温度控制器60,其用于控制​​成膜源容器31和管线43的温度低于羰基钴的分解开始温度; 以及用于将CO气体供给到成膜源容器31中的CO气体供给单元37。

    FILM FORMATION METHOD AND STORAGE MEDIUM
    4.
    发明申请
    FILM FORMATION METHOD AND STORAGE MEDIUM 审中-公开
    电影形成方法和存储媒体

    公开(公告)号:US20110174630A1

    公开(公告)日:2011-07-21

    申请号:US13054331

    申请日:2010-08-27

    IPC分类号: C23C28/02

    摘要: A film formation method includes preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.

    摘要翻译: 成膜方法包括在基板的表面上准备形成Co膜作为种子层的基板,向基板施加负电压使得Co的表面电位低于Co的氧化电位,并且在 当将负电压施加到基板上时,将Co膜浸入主要含有硫酸铜溶液的镀液中,由此通过电镀在基板的Co膜上形成Cu膜。