摘要:
The film forming apparatus includes a chamber 1; a heater 5 for heating a wafer W within the chamber 1; a film forming source vessel 31, provided outside the chamber 1, for accommodating cobalt carbonyl as a film forming source; a line 43 for transporting gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1; an exhaust device 23 for depressurizing and exhausting an inside of the chamber 1; a cobalt carbonyl supply unit 38 for supplying the gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1 via the line 43; a temperature controller 60 for controlling temperatures of the film forming source vessel 31 and the line 43 to be below a decomposition starting temperature of the cobalt carbonyl; and a CO gas supply unit 37 for supplying a CO gas into the film forming source vessel 31.
摘要:
In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co4(CO)12 as a single film forming material is supplied into the processing chamber. Then, the gaseous Co4(CO)12 is thermally decomposed on the substrate to form the Co film on the substrate.
摘要:
In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co4(CO)12 as a single film forming material is supplied into the processing chamber. Then, the gaseous Co4(CO)12 is thermally decomposed on the substrate to form the Co film on the substrate.
摘要:
A substrate is transferred to a processing container, and a film formation raw material containing cobalt amidinate and a reducing agent containing a carbonic acid in a vapor phase are introduced into the processing container, thereby a Co film is formed on the substrate.
摘要:
A film formation method includes preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.
摘要:
The present invention provides a medicinal agent and a method for each of various testing or the like, which enable the treatment and prevention, particularly preventive treatment, of Th3 march-related diseases. The present invention also provides a pharmaceutical composition for treating and/or preventing Th3 march-related diseases, which comprises zinc, calcium and phosphorus and additionally comprises pumpkin seeds and corn silk, and which preferably can activate the DNA repairing ability of a zinc finger, particularly the ability of repairing defect or mutation of DNA for a filaggrin gene, of a zinc finger.
摘要:
A reactor including a reactor vessel and heat exchange tubes provided in the reactor vessel. The reactor vessel includes a tubesheet and is configured to receive a reaction fluid. The tubesheet has a first plate member configured to contact the reaction fluid and a second plate member configured to not contact the reaction fluid. Heat exchange tubes are provided in the reactor vessel and fixed to the first plate member. The heat exchange tubes are configured to receive a heat exchange medium. At least a portion of the first plate member configured to contact the reaction fluid is made of a metal that has a high corrosion-resistance against the reaction liquid, and the second plate member is made of a metal that has a low corrosion-resistance against the reaction liquid. The second plate member is detachably fixed to a remainder of the reactor vessel.
摘要:
A semiconductor manufacturing apparatus, when a barrier film and a copper film are formed along a recess in an insulating film by using an alloy layer of copper and addictive metal, e.g., Mn, and copper wiring is embedded therein, reduces Mn in the copper film to suppress an increase in wiring resistance. A vacuum transfer module is connected, through a load lock chamber, to a loader module for transferring a wafer with respect to a carrier. A formic acid treatment module supplying formic acid vapor as an organic acid to the wafer and a module forming a film of Cu, e.g., by CVD are connected to the vacuum transfer module to configure an apparatus manufacturing a semiconductor. The wafer W subjected to alloy layer formation and then, e.g., to annealing is transferred into the apparatus, and treatment with formic acid is performed followed by Cu film formation.
摘要:
To provide a lithographic printing plate precursor which generates no stains in the non-image area and is also excellent in development latitude. Disclosed is a lithographic printing plate precursor comprising a support and a photosensitive layer, said lithographic printing plate precursor further comprising a subbing layer containing a maleamic acid (co)polymer, in which at least one hydrogen atom on a nitrogen atom is substituted with an onium group, provided between the photosensitive layer and the support.
摘要:
A granulator, having: a granulation unit having a bottom floor with a perforated plate as its bottom part; an upper air-supplying pipe for supplying a fluidizing air to the bottom floor of the granulation unit; a lower air-supplying pipe; air-spouting pipes, each of which is branched from the lower air-supplying pipe, and has an opening in the bottom floor of the perforated plate, for jetting the air into the granulation unit; and spray nozzles for spraying a granulation raw material liquid, which each are provided in the center of an air outlet of the air-spouting pipe, or a granulator, having: the bottom floor; the air-supplying pipe; and spray nozzles for spraying a granulation raw material liquid, which each are provided in an opening in the bottom floor of the perforated plate, and use a high-pressure atomizing air as an auxiliary gas, wherein, in each granulator, the spray nozzles are formed in triangular arrangement.