FILM FORMING APPARATUS, FILM FORMING METHOD AND STORAGE MEDIUM
    1.
    发明申请
    FILM FORMING APPARATUS, FILM FORMING METHOD AND STORAGE MEDIUM 审中-公开
    电影成型设备,成膜方法和储存介质

    公开(公告)号:US20120171365A1

    公开(公告)日:2012-07-05

    申请号:US13395683

    申请日:2010-08-27

    IPC分类号: B05D5/12 C23C16/52 C23C16/46

    摘要: The film forming apparatus includes a chamber 1; a heater 5 for heating a wafer W within the chamber 1; a film forming source vessel 31, provided outside the chamber 1, for accommodating cobalt carbonyl as a film forming source; a line 43 for transporting gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1; an exhaust device 23 for depressurizing and exhausting an inside of the chamber 1; a cobalt carbonyl supply unit 38 for supplying the gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1 via the line 43; a temperature controller 60 for controlling temperatures of the film forming source vessel 31 and the line 43 to be below a decomposition starting temperature of the cobalt carbonyl; and a CO gas supply unit 37 for supplying a CO gas into the film forming source vessel 31.

    摘要翻译: 成膜装置包括:室1; 用于加热室1内的晶片W的加热器5; 成膜源容器31,设置在室1的外部,用于容纳羰基钴作为成膜源; 用于将气态钴羰基从成膜源容器31输送到腔室1的管线43; 用于对室1内部进行减压排气的排气装置23; 用于经由管线43将气态钴羰基从成膜源容器31供应到室1的羰基钴供应单元38; 温度控制器60,其用于控制​​成膜源容器31和管线43的温度低于羰基钴的分解开始温度; 以及用于将CO气体供给到成膜源容器31中的CO气体供给单元37。

    FILM FORMATION METHOD AND STORAGE MEDIUM
    5.
    发明申请
    FILM FORMATION METHOD AND STORAGE MEDIUM 审中-公开
    电影形成方法和存储媒体

    公开(公告)号:US20110174630A1

    公开(公告)日:2011-07-21

    申请号:US13054331

    申请日:2010-08-27

    IPC分类号: C23C28/02

    摘要: A film formation method includes preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.

    摘要翻译: 成膜方法包括在基板的表面上准备形成Co膜作为种子层的基板,向基板施加负电压使得Co的表面电位低于Co的氧化电位,并且在 当将负电压施加到基板上时,将Co膜浸入主要含有硫酸铜溶液的镀液中,由此通过电镀在基板的Co膜上形成Cu膜。

    Reactor
    7.
    发明授权
    Reactor 有权
    反应堆

    公开(公告)号:US07815874B2

    公开(公告)日:2010-10-19

    申请号:US12125339

    申请日:2008-05-22

    IPC分类号: F28D7/00

    摘要: A reactor including a reactor vessel and heat exchange tubes provided in the reactor vessel. The reactor vessel includes a tubesheet and is configured to receive a reaction fluid. The tubesheet has a first plate member configured to contact the reaction fluid and a second plate member configured to not contact the reaction fluid. Heat exchange tubes are provided in the reactor vessel and fixed to the first plate member. The heat exchange tubes are configured to receive a heat exchange medium. At least a portion of the first plate member configured to contact the reaction fluid is made of a metal that has a high corrosion-resistance against the reaction liquid, and the second plate member is made of a metal that has a low corrosion-resistance against the reaction liquid. The second plate member is detachably fixed to a remainder of the reactor vessel.

    摘要翻译: 包括反应器容器和设置在反应器容器中的热交换管的反应器。 反应器容器包括管板,并且构造成容纳反应流体。 管板具有构造成接触反应流体的第一板构件和构造成不接触反应流体的第二板构件。 热交换管设置在反应器容器中并固定到第一板构件。 热交换管被构造成接收热交换介质。 构成为接触反应流体的第一板状构件的至少一部分由对反应液体具有高耐腐蚀性的金属制成,第二板构件由耐腐蚀性低的金属制成 反应液体。 第二板构件可拆卸地固定到反应器容器的其余部分。

    SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, STORAGE MEDIUM AND COMPUTER PROGRAM
    8.
    发明申请
    SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, STORAGE MEDIUM AND COMPUTER PROGRAM 审中-公开
    半导体制造设备,半导体器件制造方法,存储介质和计算机程序

    公开(公告)号:US20100099254A1

    公开(公告)日:2010-04-22

    申请号:US12443983

    申请日:2007-10-01

    IPC分类号: H01L21/768 H01L21/00

    摘要: A semiconductor manufacturing apparatus, when a barrier film and a copper film are formed along a recess in an insulating film by using an alloy layer of copper and addictive metal, e.g., Mn, and copper wiring is embedded therein, reduces Mn in the copper film to suppress an increase in wiring resistance. A vacuum transfer module is connected, through a load lock chamber, to a loader module for transferring a wafer with respect to a carrier. A formic acid treatment module supplying formic acid vapor as an organic acid to the wafer and a module forming a film of Cu, e.g., by CVD are connected to the vacuum transfer module to configure an apparatus manufacturing a semiconductor. The wafer W subjected to alloy layer formation and then, e.g., to annealing is transferred into the apparatus, and treatment with formic acid is performed followed by Cu film formation.

    摘要翻译: 半导体制造装置,通过使用例如Mn的铜和上釉金属的合金层,在绝缘膜中的凹部形成阻挡膜和铜膜,并且嵌入铜布线,从而减少铜膜中的Mn 以抑制布线电阻的增加。 真空传递模块通过负载锁定室连接到用于相对于载体传送晶片的加载器模块。 向晶片供给作为有机酸的甲酸蒸气的甲酸处理组件和例如通过CVD形成Cu膜的模块连接到真空转印模块以构造制造半导体的装置。 进行合金层形成然后例如退火的晶片W被转移到装置中,然后用甲酸处理,然后进行Cu膜形成。

    Lithographic printing plate precursor
    9.
    发明授权
    Lithographic printing plate precursor 失效
    平版印刷版前体

    公开(公告)号:US07670753B2

    公开(公告)日:2010-03-02

    申请号:US11573733

    申请日:2005-08-17

    申请人: Yasuhiko Kojima

    发明人: Yasuhiko Kojima

    IPC分类号: G03F7/00 G03C1/00

    CPC分类号: B41C1/10 G03F7/11

    摘要: To provide a lithographic printing plate precursor which generates no stains in the non-image area and is also excellent in development latitude. Disclosed is a lithographic printing plate precursor comprising a support and a photosensitive layer, said lithographic printing plate precursor further comprising a subbing layer containing a maleamic acid (co)polymer, in which at least one hydrogen atom on a nitrogen atom is substituted with an onium group, provided between the photosensitive layer and the support.

    摘要翻译: 为了提供在非图像区域中不产生污渍的平版印刷版原版,并且显影性也优异。 公开了一种包含支持体和感光层的平版印刷版原版,所述平版印刷版前体还包含含有马来酰胺酸(共)聚合物的底层,其中氮原子上的至少一个氢原子被鎓 组,设置在感光层和支撑体之间。

    Granulator and method of granulation using the same
    10.
    发明申请
    Granulator and method of granulation using the same 有权
    造粒机及造粒方法使用

    公开(公告)号:US20090134536A1

    公开(公告)日:2009-05-28

    申请号:US12290416

    申请日:2008-10-30

    IPC分类号: B29B9/00

    摘要: A granulator, having: a granulation unit having a bottom floor with a perforated plate as its bottom part; an upper air-supplying pipe for supplying a fluidizing air to the bottom floor of the granulation unit; a lower air-supplying pipe; air-spouting pipes, each of which is branched from the lower air-supplying pipe, and has an opening in the bottom floor of the perforated plate, for jetting the air into the granulation unit; and spray nozzles for spraying a granulation raw material liquid, which each are provided in the center of an air outlet of the air-spouting pipe, or a granulator, having: the bottom floor; the air-supplying pipe; and spray nozzles for spraying a granulation raw material liquid, which each are provided in an opening in the bottom floor of the perforated plate, and use a high-pressure atomizing air as an auxiliary gas, wherein, in each granulator, the spray nozzles are formed in triangular arrangement.

    摘要翻译: 造粒机,具有:造粒单元,具有底板,多孔板作为底部; 用于向造粒单元的底层供给流化空气的上部供气管; 下供气管; 排气管,其分别从下供气管分支,并且在多孔板的底板中具有用于将空气喷射到造粒单元中的开口; 以及喷射喷嘴,用于喷射造粒原料液体,每个制粒原料液体设置在排气管的出气口的中心,或造粒机,具有:底层; 供气管; 以及喷射喷嘴,用于喷射造粒原料液体,其分别设置在多孔板的底板的开口中,并且使用高压雾化空气作为辅助气体,其中,在每个造粒机中,喷嘴为 形成三角形排列。