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1.发明授权Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board 失效制备低聚烷基倍半硅氧烷并在电子电路板上形成硅烷化聚合物绝缘层
公开(公告)号：US4988514A
公开(公告)日：1991-01-29
申请号：US281926
申请日：1988-12-02
IPC分类号： C08G77/06 , H01B3/46 , H01L21/312 , H01L21/48 , H01L23/498 , H05K1/00
CPC分类号： H01L21/02137 , C08G77/06 , H01B3/46 , H01L21/02282 , H01L21/3122 , H01L21/4803 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , Y10S428/90 , Y10S428/901 , Y10T428/31663 , Y10T428/31678
摘要： A lower alkyl polysilsesquioxane having a general formula ##STR1## wherein R is CH.sub.3 is C.sub.2 H.sub.5, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -31 20.degree. C. to -50.degree. C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20.degree. C. to -50.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60.degree. C. to 100.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa.Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula ##STR2## wherein R is an alkyl or phenyl group, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.
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2.发明授权Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board 失效制备低聚烷基倍半硅氧烷并在电子电路板上形成硅烷化聚合物绝缘层
公开(公告)号：US4670299A
公开(公告)日：1987-06-02
申请号：US790615
申请日：1985-10-23
IPC分类号： C08G77/06 , H01B3/46 , H01L21/312 , H01L21/48 , H01L23/498 , H05K1/00 , B05D5/12
CPC分类号： H01L21/02137 , C08G77/06 , H01B3/46 , H01L21/02282 , H01L21/3122 , H01L21/4803 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , Y10S428/90 , Y10S428/901 , Y10T428/31663 , Y10T428/31678
摘要： A lower alkyl polysilsesquioxane having a general formula ##STR1## wherein R is CH.sub.3 or C.sub.2 H.sub.5, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20.degree. C. to -50.degree. C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20.degree. C. to -50.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60.degree. C. to 100.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa.Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula ##STR2## wherein R is an alkyl or phenyl group, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.
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3.发明授权Semiconductor integrated circuit device employing interlayer insulating film with low dielectric constant 失效采用具有低介电常数的层间绝缘膜的半导体集成电路器件
公开(公告)号：US5949130A
公开(公告)日：1999-09-07
申请号：US25323
申请日：1998-02-18
IPC分类号： H01L21/768 , H01L21/312 , H01L21/314 , H01L23/522 , H01L23/532 , H01L23/29
CPC分类号： H01L23/5329 , H01L23/53295 , H01L2924/0002
摘要： A plurality of lines are formed on the principal face of a substrate. An insulating film is formed on the principal surface of this substrate so as to cover the lines. This insulating film consists of a material which contains a low-dielectric constant composition having caged molecular structural units. Spaces of thin electron clouds delineate the centers of the caged molecular structural units. The dielectric constant is accordingly lower than that of denser materials.
摘要翻译： 在基板的主面上形成多条线。 在该基板的主表面上形成绝缘膜以覆盖线。 该绝缘膜由含有笼状分子结构单元的低介电常数组成的材料构成。 薄电子云的空间描绘了笼状分子结构单元的中心。 因此介电常数低于较密的材料。
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公开(公告)号：US06693736B1
公开(公告)日：2004-02-17
申请号：US09688832
申请日：2000-10-17
申请人： Tetsuzo Yoshimura , Takeshi Ishitsuka , Katsusada Motoyoshi , Satoshi Tatsuura , Wataru Sotoyama , Koji Tsukamoto , Yasuhiro Yoneda , Tomoaki Hayano , Azuma Matsuura
发明人： Tetsuzo Yoshimura , Takeshi Ishitsuka , Katsusada Motoyoshi , Satoshi Tatsuura , Wataru Sotoyama , Koji Tsukamoto , Yasuhiro Yoneda , Tomoaki Hayano , Azuma Matsuura
IPC分类号： H01S0300
CPC分类号： H01S5/1032 , G02B6/43 , G02F1/313 , H01L2224/16225 , H01L2924/00014 , H01S5/02248 , H01S5/0264 , H01S5/041 , H01S5/42 , H01L2224/0401
摘要： An optical circuit system which takes out at least a portion of the light of a light power source corresponding to at least one type of output voltage of an IC, board, multichip module, electronic element, or opto-electronic element and produces an optical signal, wherein the light power source is an optical waveguide into which light has been introduced, a waveguide laser, or a waveguide optical amplifier, light reflecting portions are provided at its ends and/or middle, a signal transmission waveguide is formed in contact with the side surface and/or top or bottom surface of the optical waveguide or in proximity to the same at a certain distance, and the optical signal corresponding to at least one type of output voltage of the IC, board, multichip module, electronic element, or opto-electronic element is made to propagate to the signal transmission waveguide, which optical circuit system is rich in flexibility and enables complicated optical interconnections to be handled, and components of the same.
摘要翻译： 一种光电路系统，其取出对应于IC，板，多芯片模块，电子元件或光电元件的至少一种类型的输出电压的光功率源的光的至少一部分，并产生光信号 其特征在于，所述光源是其中引入了光的光波导，波导激光或波导光放大器，在其端部和/或中间设置有光反射部，形成与所述光波导接触的信号传输波导 光波导的侧表面和/或顶表面或底表面，或者在一定距离附近，并且所述光信号对应于IC，板，多芯片模块，电子元件或其中的至少一种类型的输出电压 光电元件被传播到信号传输波导，该光电路系统具有丰富的灵活性，并且能够复杂的光互连被处理，并且组合 相同的女人
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5.发明授权Optical circuit system capable of producing optical signal having a small fluctuation and components of same 失效能够产生具有小波动的光信号的光电路系统及其组成
公开(公告)号：US5757989A
公开(公告)日：1998-05-26
申请号：US240739
申请日：1994-08-15
申请人： Tetsuzo Yoshimura , Takeshi Ishitsuka , Katsusada Motoyoshi , Satoshi Tatsuura , Wataru Sotoyama , Koji Tsukamoto , Yasuhiro Yoneda , Tomoaki Hayano , Azuma Matsuura
发明人： Tetsuzo Yoshimura , Takeshi Ishitsuka , Katsusada Motoyoshi , Satoshi Tatsuura , Wataru Sotoyama , Koji Tsukamoto , Yasuhiro Yoneda , Tomoaki Hayano , Azuma Matsuura
IPC分类号： G02B6/43 , G02F1/313 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/04 , H01S5/10 , H01S5/42 , H04Q3/52 , G02B6/12
CPC分类号： H01S5/1032 , G02B6/43 , G02F1/313 , G02F1/3132 , G02F1/3137 , H01L2224/16145 , H01L2224/16225 , H01S5/02248 , H01S5/041 , H01S5/42
摘要： An optical circuit system which takes out at least a portion of the light of a light power source corresponding to at least one type of output voltage of an IC, board, multichip module, electronic element, or opto-electronic element and produces an optical signal, wherein the light power source is an optical waveguide into which light has been introduced, a waveguide laser, or a waveguide optical amplifier, light reflecting portions are provided at its ends and/or middle, a signal transmission waveguide is formed in contact with the side surface and/or top or bottom surface of the optical waveguide or in proximity to the same at a certain distance, and the optical signal corresponding to at least one type of output voltage of the IC, board, multichip module, electronic element, or opto-electronic element is made to propagate to the signal transmission waveguide, which optical circuit system is rich in flexibility and enables complicated optical interconnections to be handled, and components of the same.
摘要翻译： PCT No.PCT / JP93 / 01301 Sec。 371日期：1994年8月15日 102（e）日期1994年8月15日PCT提交1993年9月10日PCT公布。 公开号WO94 / 06052 日期1994年3月17日一种光电路系统，其取出对应于IC，板，多芯片模块，电子元件或光电子元件的至少一种类型的输出电压的光源的至少一部分光 并且产生光信号，其中光功率源是已经引入光的光波导，波导激光器或波导光放大器，在其端部和/或中间设置有光反射部分，信号传输波导是 形成为与光波导的侧表面和/或顶表面或底表面接触或者在一定距离处与其接近，并且所述光信号对应于IC，板，多芯片模块的至少一种类型的输出电压 ，电子元件或光电元件传播到信号传输波导，该光电路系统具有丰富的灵活性，并使复杂的光互连成为 处理和组件相同。
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6.发明授权公开(公告)号：US08271250B2
公开(公告)日：2012-09-18
申请号：US11976360
申请日：2007-10-24
申请人： Hiroyuki Sato , Azuma Matsuura
发明人： Hiroyuki Sato , Azuma Matsuura
IPC分类号： G06G7/58
CPC分类号： G06F3/04815 , G06F19/706 , G06F19/708
摘要： A molecule design support apparatus has an input part, a display to display on a screen thereof a three-dimensional molecular structure by a half vector format or a ball-and-stick format, and a determining part to determine, in the molecular structure, an end that is to become a target of a coordinate modification with respect to a molecule in its entirety, in response to a bond axis of the molecule specified from the input part. The apparatus further has a modifying part to make a modification of the molecular structure based on the specified bond axis and the end that is the target of the coordinate modification, in response to the modification specified from the input part, and a display part to display a modified molecular structure on the screen of the display based on a determination made by the determining part and the modification made by the modifying part.
摘要翻译： 分子设计支持装置具有输入部分，通过半矢量格式或球形格式在其屏幕上显示三维分子结构的显示器，以及确定部件，在分子结构中， 响应于从输入部分指定的分子的键轴，成为关于整体上的分子的坐标修饰的目标。 该装置还具有修改部分，以响应于从输入部分指定的修改而基于指定的键合轴和作为坐标修改的目标的结束的分子结构的修改，以及显示部分 基于由确定部分进行的确定和由修改部分进行的修改而在显示器的屏幕上的修改的分子结构。
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7.发明授权Condensed eight-ring aromatic compound, and organic EL element and organic EL display using the same 有权缩合的八环芳族化合物，以及有机EL元件和使用其的有机EL显示器公开(公告)号：US06805977B2
公开(公告)日：2004-10-19
申请号：US10104013
申请日：2002-03-25
IPC分类号： H05B3312
CPC分类号： C07C211/61 , C07C15/20 , C07C2603/54 , H01L51/005 , H01L51/0056 , H01L51/0059 , H01L51/006 , H01L51/0071 , H01L51/0081 , H01L51/5012 , Y10S428/917
摘要： The object of the present invention is to provide an organic EL element which utilizes a novel condensed eight-ring aromatic compound, and has high color purity of red light and excellent light-emitting efficiency, light-emitting luminance and the like. The organic EL element of the present invention has, in between a positive electrode and a negative electrode, an organic thin-film layer including a light-emitting layer. The organic thin-film layer contains the condensed eight-ring aromatic compound which has a number of regions where substituents can be introduced is any of 14, 16 and 18, and the condensed eight-ring aromatic compound has a point-symmetrical skeleton.
摘要翻译： 本发明的目的是提供一种利用新型缩合的八环芳族化合物的有机EL元件，并且具有高的红色纯度和优异的发光效率，发光亮度等。 本发明的有机EL元件在正极和负极之间具有包含发光层的有机薄膜层。 有机薄膜层含有具有多个可以引入取代基的区域的缩合的八环芳香族化合物，为14,16和18，并且所述缩合的八环芳族化合物具有点对称骨架。
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公开(公告)号：US5612449A
公开(公告)日：1997-03-18
申请号：US462597
申请日：1995-06-05
IPC分类号： C07D307/89 , C07D333/72 , C08G73/10 , C09K9/02 , G02B6/12 , G02B6/122 , G02F1/313 , G02F1/35 , G02F1/355 , G02F1/361 , C08G73/00
CPC分类号： C08G73/1082 , G02F1/3617
摘要： A nonlinear optical material composed of a polyimide obtained from a diamine and/or a diacid anhydride or dithioacid anhydride substituted by a portion having a nonlinear optical effect or of molecules having a benzocyclobutene structure substituted at the portions having an nonlinear linear optical effect.
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9.发明授权Nonlinear optical material, process of production of same, and nonlinear optical device and directional coupling type optical switch using same 失效非线性光学材料，其生产工艺，非线性光学器件和使用其的定向耦合型光开关
公开(公告)号：US5459232A
公开(公告)日：1995-10-17
申请号：US88649
申请日：1993-07-09
IPC分类号： C07D307/89 , C07D333/72 , C08G73/10 , C09K9/02 , G02B6/12 , G02B6/122 , G02F1/313 , G02F1/35 , G02F1/355 , G02F1/361 , C08G69/26
CPC分类号： C08G73/1082 , G02F1/3617
摘要： A nonlinear optical material composed of a polyimide obtained from a diamine and/or a diacid anhydride or dithioacid anhydride substituted by a portion having a nonlinear optical effect or of molecules having a benzocyclobutene structure substituted at the portions having an nonlinear linear optical effect.
摘要翻译： 由由具有非线性光学效应的部分取代的二胺和/或二酸酐或二硫代酸酐得到的聚酰亚胺或具有在具有非线性线性光学效应的部分取代的苯并环丁烯结构的分子组成的非线性光学材料。
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10.发明申请SEMICONDUCTOR DEVICE HAVING A INTERLAYER INSULATION FILM WITH LOW DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH 有权具有低介电常数和高机械强度的中间层绝缘膜的半导体器件公开(公告)号：US20080122121A1
公开(公告)日：2008-05-29
申请号：US11944053
申请日：2007-11-21
申请人： Shoichi Suda , Shino Tokuyo , Yoshihiro Nakata , Azuma Matsuura
发明人： Shoichi Suda , Shino Tokuyo , Yoshihiro Nakata , Azuma Matsuura
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76832 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/02348 , H01L21/02351 , H01L21/02362 , H01L21/31695 , H01L21/76816 , H01L21/76825 , H01L21/76835 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor is disclosed.The method includes the steps of forming a porous insulation film and wires on the substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.
摘要翻译： 公开了一种制造半导体的方法。 该方法包括以下步骤：在基板上形成多孔绝缘膜和导线，嵌入多孔绝缘膜中的电线具有与电线相邻的部分和与电线隔开的远端部分; 以及向远端部分施加能量束以改变多孔绝缘膜的结构，使得多孔绝缘膜的杨氏模量增加，从而显着增强多孔绝缘膜的强度。
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