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1.发明授权Semiconductor integrated circuit device employing interlayer insulating film with low dielectric constant 失效采用具有低介电常数的层间绝缘膜的半导体集成电路器件
公开(公告)号：US5949130A
公开(公告)日：1999-09-07
申请号：US25323
申请日：1998-02-18
IPC分类号： H01L21/768 , H01L21/312 , H01L21/314 , H01L23/522 , H01L23/532 , H01L23/29
CPC分类号： H01L23/5329 , H01L23/53295 , H01L2924/0002
摘要： A plurality of lines are formed on the principal face of a substrate. An insulating film is formed on the principal surface of this substrate so as to cover the lines. This insulating film consists of a material which contains a low-dielectric constant composition having caged molecular structural units. Spaces of thin electron clouds delineate the centers of the caged molecular structural units. The dielectric constant is accordingly lower than that of denser materials.
摘要翻译： 在基板的主面上形成多条线。 在该基板的主表面上形成绝缘膜以覆盖线。 该绝缘膜由含有笼状分子结构单元的低介电常数组成的材料构成。 薄电子云的空间描绘了笼状分子结构单元的中心。 因此介电常数低于较密的材料。
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2.发明授权Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board 失效制备低聚烷基倍半硅氧烷并在电子电路板上形成硅烷化聚合物绝缘层
公开(公告)号：US4988514A
公开(公告)日：1991-01-29
申请号：US281926
申请日：1988-12-02
IPC分类号： C08G77/06 , H01B3/46 , H01L21/312 , H01L21/48 , H01L23/498 , H05K1/00
CPC分类号： H01L21/02137 , C08G77/06 , H01B3/46 , H01L21/02282 , H01L21/3122 , H01L21/4803 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , Y10S428/90 , Y10S428/901 , Y10T428/31663 , Y10T428/31678
摘要： A lower alkyl polysilsesquioxane having a general formula ##STR1## wherein R is CH.sub.3 is C.sub.2 H.sub.5, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -31 20.degree. C. to -50.degree. C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20.degree. C. to -50.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60.degree. C. to 100.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa.Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula ##STR2## wherein R is an alkyl or phenyl group, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.
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3.发明授权Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board 失效制备低聚烷基倍半硅氧烷并在电子电路板上形成硅烷化聚合物绝缘层
公开(公告)号：US4670299A
公开(公告)日：1987-06-02
申请号：US790615
申请日：1985-10-23
IPC分类号： C08G77/06 , H01B3/46 , H01L21/312 , H01L21/48 , H01L23/498 , H05K1/00 , B05D5/12
CPC分类号： H01L21/02137 , C08G77/06 , H01B3/46 , H01L21/02282 , H01L21/3122 , H01L21/4803 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , Y10S428/90 , Y10S428/901 , Y10T428/31663 , Y10T428/31678
摘要： A lower alkyl polysilsesquioxane having a general formula ##STR1## wherein R is CH.sub.3 or C.sub.2 H.sub.5, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20.degree. C. to -50.degree. C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20.degree. C. to -50.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60.degree. C. to 100.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa.Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula ##STR2## wherein R is an alkyl or phenyl group, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.
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4.发明授权Low dielectric constant film material, film and semiconductor device using such material 有权低介电常数薄膜材料，薄膜和使用这种材料的半导体器件公开(公告)号：US06958525B2
公开(公告)日：2005-10-25
申请号：US10448092
申请日：2003-05-30
申请人： Yoshihiro Nakata , Shun-ichi Fukuyama , Katsumi Suzuki , Ei Yano , Tamotsu Owada , Iwao Sugiura
发明人： Yoshihiro Nakata , Shun-ichi Fukuyama , Katsumi Suzuki , Ei Yano , Tamotsu Owada , Iwao Sugiura
IPC分类号： B32B7/02 , B32B27/00 , C08K5/13 , C08L83/04 , C08L83/16 , C09D183/04 , C09D183/16 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/58 , H01L23/48
CPC分类号： C09D183/04 , C09D183/16 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/312 , H01L21/3121 , H01L21/3122 , H01L21/76801 , H01L21/76807 , H01L21/76834 , H01L21/76835 , H01L21/76837 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/31663 , C08L83/00 , H01L2924/00
摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.
摘要翻译： 低介电膜形成材料含有溶解在溶剂中的硅氧烷树脂和聚碳硅烷。 通过使用该溶液，形成含有与硅氧烷树脂结合的硅氧烷树脂和聚碳硅烷的低电介质膜。 提供了适用于层间绝缘膜材料的低介电膜材料。 还提供了具有低介电常数膜和高可靠性的半导体器件。
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公开(公告)号：US5770260A
公开(公告)日：1998-06-23
申请号：US886018
申请日：1997-06-30
申请人： Shun-ichi Fukuyama , Daitei Shin , Yuki Komatsu , Hideki Harada , Yoshihiro Nakata , Michiko Kobayashi , Yoshiyuki Okura
发明人： Shun-ichi Fukuyama , Daitei Shin , Yuki Komatsu , Hideki Harada , Yoshihiro Nakata , Michiko Kobayashi , Yoshiyuki Okura
IPC分类号： H01L21/316 , C23C18/12 , G02F1/1333 , H01L21/312 , H01L21/768 , H01L51/00 , H01L51/05 , B05D3/02 , B05D3/06
CPC分类号： C23C18/122 , C23C18/1212 , C23C18/1283 , C23C18/1295 , C23C18/14 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/02343 , H01L21/02348 , H01L21/3125 , H01L21/316
摘要： A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O.sub.2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.
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6.发明授权Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device 有权绝缘膜的形成方法，多层结构的形成方法及半导体装置的制造方法公开(公告)号：US07541296B2
公开(公告)日：2009-06-02
申请号：US11171318
申请日：2005-07-01
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/02282 , C23C16/45523 , C23C16/50 , H01L21/02123 , H01L21/0234 , H01L21/316 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L2224/05
摘要： Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k materials in a solvent to form a coating film, subjecting the coating film to a baking treatment under heating for about several minutes at a temperature near a boiling point of the solvent, forming, on the coating film after the baking treatment, an SiC barrier film using a CVD method, and subjecting the coating film to a hydrogen plasma treatment through the barrier film continuously using the same CVD apparatus as used in forming the barrier film without taking out the coating film from the CVD apparatus.
摘要翻译： 公开了一种有效地形成Low-k绝缘膜的方法。 该方法包括以下步骤：在底层上旋转涂覆通过将低k材料分散在溶剂中而形成涂层膜形成的前体溶液，使涂膜在温度下加热约几分钟的烘烤处理 接近溶剂的沸点，在烘烤处理后的涂膜上形成使用CVD法的SiC阻挡膜，并使用与所使用的相同的CVD装置连续地通过阻挡膜对涂膜进行氢等离子体处理 在不从CVD装置中取出涂膜的情况下形成阻挡膜。
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7.发明授权Low dielectric constant film material, film and semiconductor device using such material 有权低介电常数薄膜材料，薄膜和使用这种材料的半导体器件公开(公告)号：US07235866B2
公开(公告)日：2007-06-26
申请号：US11205128
申请日：2005-08-17
申请人： Yoshihiro Nakata , Shun-ichi Fukuyama , Katsumi Suzuki , Ei Yano , Tamotsu Owada , Iwao Sugiura
发明人： Yoshihiro Nakata , Shun-ichi Fukuyama , Katsumi Suzuki , Ei Yano , Tamotsu Owada , Iwao Sugiura
CPC分类号： C09D183/04 , C09D183/16 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/312 , H01L21/3121 , H01L21/3122 , H01L21/76801 , H01L21/76807 , H01L21/76834 , H01L21/76835 , H01L21/76837 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/31663 , C08L83/00 , H01L2924/00
摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.
摘要翻译： 低介电膜形成材料含有溶解在溶剂中的硅氧烷树脂和聚碳硅烷。 通过使用该溶液，形成含有与硅氧烷树脂结合的硅氧烷树脂和聚碳硅烷的低电介质膜。 提供了适用于层间绝缘膜材料的低介电膜材料。 还提供了具有低介电常数膜和高可靠性的半导体器件。
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公开(公告)号：US20060022357A1
公开(公告)日：2006-02-02
申请号：US11205128
申请日：2005-08-17
申请人： Yoshihiro Nakata , Shun-ichi Fukuyama , Katsumi Suzuki , Ei Yano , Tamotsu Owada , Iwao Sugiura
发明人： Yoshihiro Nakata , Shun-ichi Fukuyama , Katsumi Suzuki , Ei Yano , Tamotsu Owada , Iwao Sugiura
CPC分类号： C09D183/04 , C09D183/16 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/312 , H01L21/3121 , H01L21/3122 , H01L21/76801 , H01L21/76807 , H01L21/76834 , H01L21/76835 , H01L21/76837 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/31663 , C08L83/00 , H01L2924/00
摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.
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公开(公告)号：US06613834B2
公开(公告)日：2003-09-02
申请号：US09797865
申请日：2001-03-05
申请人： Yoshihiro Nakata , Shun-ichi Fukuyama , Katsumi Suzuki , Ei Yano , Tamotsu Owada , Iwao Sugiura
发明人： Yoshihiro Nakata , Shun-ichi Fukuyama , Katsumi Suzuki , Ei Yano , Tamotsu Owada , Iwao Sugiura
IPC分类号： C08L8304
CPC分类号： C09D183/04 , C09D183/16 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/312 , H01L21/3121 , H01L21/3122 , H01L21/76801 , H01L21/76807 , H01L21/76834 , H01L21/76835 , H01L21/76837 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/31663 , C08L83/00 , H01L2924/00
摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.
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公开(公告)号：US20060178017A1
公开(公告)日：2006-08-10
申请号：US11171318
申请日：2005-07-01
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02282 , C23C16/45523 , C23C16/50 , H01L21/02123 , H01L21/0234 , H01L21/316 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L2224/05
摘要： Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k materials in a solvent to form a coating film, subjecting the coating film to a baking treatment under heating for about several minutes at a temperature near a boiling point of the solvent, forming, on the coating film after the baking treatment, an SiC barrier film using a CVD method, and subjecting the coating film to a hydrogen plasma treatment through the barrier film continuously using the same CVD apparatus as used in forming the barrier film without taking out the coating film from the CVD apparatus.
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