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17 条记录 (耗时 0.043 秒)

    METHODS OF MAKING ACOUSTIC WAVE DEVICES
    5.
    发明申请
    METHODS OF MAKING ACOUSTIC WAVE DEVICES 审中-公开

    公开(公告)号：US20200382092A1

    公开(公告)日：2020-12-03

    申请号：US16428860

    申请日：2019-05-31

    申请人： Dong Li ,  Ying Ma ,  Ge Yi ,  Zongrong Liu

    发明人： Dong Li ,  Ying Ma ,  Ge Yi ,  Zongrong Liu

    IPC分类号： H03H9/02 ,  H03H9/17

    摘要： An acoustic wave device system with its piezoelectric layer originating from a single crystal piezoelectric wafer/substrate is invented along with sets of detailed process steps to fabricate such a device using wafer-to-wafer and/or die-to-wafer bonding technologies. The proposed device system is particularly good to make bulk acoustic wave (BAW) devices. Methods allowing the single crystal piezoelectric wafer/substrate to be re-used are also given. The proposed methods include detailed process steps to allow heterogeneous integration of electrical chips into the system in a very cost efficient manner. The invention provides a practical and low-cost approach to fabricate the radio frequency (RF) front end chip incorporating RF filters and electronic components integrated into a small footprint which is particularly useful for mobile device and RF stations.

    Chip Front Surface Touchless Pick and Place Tool or Flip Chip Bonder
    6.
    发明申请
    Chip Front Surface Touchless Pick and Place Tool or Flip Chip Bonder 有权

    公开(公告)号：US20210057242A1

    公开(公告)日：2021-02-25

    申请号：US16550109

    申请日：2019-08-23

    申请人： Yunjun Tang ,  Zongrong Liu ,  Ge Yi

    发明人： Yunjun Tang ,  Zongrong Liu ,  Ge Yi

    IPC分类号： H01L21/67 ,  H01L23/00 ,  H01L21/683

    摘要： A piece of pick and place tool or a chip bonding equipment, which has innovative designs enabling chip(s) on a tape to get picked up without touching its front surface, is invented. The designs use levitation technologies to receive and hold the chips detached from the tape from a face-down position. A streamline design is also invented to provide better productivity. The invented pick and place tool or chip bonder is particularly useful for applications which require using chips with zero tolerance of particle and/or contamination on the chip front surfaces.

    Magnetoresistive random access memory cell design
    8.
    发明申请
    Magnetoresistive random access memory cell design 审中-公开
    磁阻随机存取存储单元设计

    公开(公告)号：US20130307097A1

    公开(公告)日：2013-11-21

    申请号：US13472085

    申请日：2012-05-15

    申请人： Ge Yi ,  Shaoping Li ,  Yunjun Tang ,  Zongrong Liu ,  Dujiang Wan

    发明人： Ge Yi ,  Shaoping Li ,  Yunjun Tang ,  Zongrong Liu ,  Dujiang Wan

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08

    摘要： A magnetic memory cell comprises in-plane anisotropy tunneling magnetic junction (TMJ) and two fixed in-plane storage-stabilized layers, which splits on the both side of the data storage layer of the TMJ. The magnetizations of the said fixed in-plane storage-stabilized layers are all normal to that of the reference layer of TMJ but point to opposite direction. The existing of the storage-stabilized layers not only enhances the stability of the data storage, but also can reduce the critical current needed to flip the data storage layer via some specially added features.

    摘要翻译： 磁存储单元包括面内各向异性隧道磁结（TMJ）和两个固定的面内存储稳定层，其分散在TMJ的数据存储层的两侧。 所述固定的面内储存稳定层的磁化与TMJ的参考层的磁化正好相反，但指向相反的方向。 现有的存储稳定层不仅增强了数据存储的稳定性，而且还可以通过一些特别添加的功能来减少翻转数据存储层所需的临界电流。

    Magnetoresistive random access memory cell design
    9.
    发明申请
    Magnetoresistive random access memory cell design 审中-公开
    磁阻随机存取存储单元设计

    公开(公告)号：US20130270661A1

    公开(公告)日：2013-10-17

    申请号：US13448133

    申请日：2012-04-16

    申请人： Ge Yi ,  Shaoping Li ,  Yunjun Tang ,  Zongrong Liu

    发明人： Ge Yi ,  Shaoping Li ,  Yunjun Tang ,  Zongrong Liu

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161

    摘要： A new magnetic memory cell comprises a perpendicular-anisotropy tunneling magnetic junction (TMJ) and a fixed in-plane spin-polarizing layer, which is separated from the perpendicular-anisotropy data storage layer of tunneling magnetic junction by a non-magnetic layer. The non-magnetic layer can be made of metallic or dielectric materials.

    摘要翻译： 新的磁存储单元包括垂直各向异性隧道磁结（TMJ）和固定的面内自旋偏振层，其通过非磁性层与隧道磁结的垂直各向异性数据存储层分离。 非磁性层可以由金属或介电材料制成。