Chip Front Surface Touchless Pick and Place Tool or Flip Chip Bonder

    公开(公告)号:US20210057242A1

    公开(公告)日:2021-02-25

    申请号:US16550109

    申请日:2019-08-23

    摘要: A piece of pick and place tool or a chip bonding equipment, which has innovative designs enabling chip(s) on a tape to get picked up without touching its front surface, is invented. The designs use levitation technologies to receive and hold the chips detached from the tape from a face-down position. A streamline design is also invented to provide better productivity. The invented pick and place tool or chip bonder is particularly useful for applications which require using chips with zero tolerance of particle and/or contamination on the chip front surfaces.

    Magnetoresistive random access memory cell design
    2.
    发明申请
    Magnetoresistive random access memory cell design 审中-公开
    磁阻随机存取存储单元设计

    公开(公告)号:US20130307097A1

    公开(公告)日:2013-11-21

    申请号:US13472085

    申请日:2012-05-15

    IPC分类号: H01L29/82

    CPC分类号: H01L43/08

    摘要: A magnetic memory cell comprises in-plane anisotropy tunneling magnetic junction (TMJ) and two fixed in-plane storage-stabilized layers, which splits on the both side of the data storage layer of the TMJ. The magnetizations of the said fixed in-plane storage-stabilized layers are all normal to that of the reference layer of TMJ but point to opposite direction. The existing of the storage-stabilized layers not only enhances the stability of the data storage, but also can reduce the critical current needed to flip the data storage layer via some specially added features.

    摘要翻译: 磁存储单元包括面内各向异性隧道磁结(TMJ)和两个固定的面内存储稳定层,其分散在TMJ的数据存储层的两侧。 所述固定的面内储存稳定层的磁化与TMJ的参考层的磁化正好相反,但指向相反的方向。 现有的存储稳定层不仅增强了数据存储的稳定性,而且还可以通过一些特别添加的功能来减少翻转数据存储层所需的临界电流。

    Magnetoresistive random access memory cell design
    3.
    发明申请
    Magnetoresistive random access memory cell design 审中-公开
    磁阻随机存取存储单元设计

    公开(公告)号:US20130270661A1

    公开(公告)日:2013-10-17

    申请号:US13448133

    申请日:2012-04-16

    IPC分类号: H01L29/82

    CPC分类号: H01L43/08 G11C11/161

    摘要: A new magnetic memory cell comprises a perpendicular-anisotropy tunneling magnetic junction (TMJ) and a fixed in-plane spin-polarizing layer, which is separated from the perpendicular-anisotropy data storage layer of tunneling magnetic junction by a non-magnetic layer. The non-magnetic layer can be made of metallic or dielectric materials.

    摘要翻译: 新的磁存储单元包括垂直各向异性隧道磁结(TMJ)和固定的面内自旋偏振层,其通过非磁性层与隧道磁结的垂直各向异性数据存储层分离。 非磁性层可以由金属或介电材料制成。

    Magnetoresistive random access memory cell with independently operating read and write components
    5.
    发明申请
    Magnetoresistive random access memory cell with independently operating read and write components 审中-公开
    具有独立操作的读写组件的磁阻随机存取存储单元

    公开(公告)号:US20130114334A1

    公开(公告)日:2013-05-09

    申请号:US13288860

    申请日:2011-11-03

    IPC分类号: G11C11/15

    摘要: A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.

    摘要翻译: 提出了一类新的存储单元。 有两个分离的脉冲数据写入和感测电流路径。 面内脉冲电流用于翻转夹在重金属写入载流层和电介质层之间的垂直各向异性数据存储层的磁化方向。 数据存储层内的磁化状态通过图案化的垂直各向异性隧道磁阻(TMR)堆叠通过堆叠的输出电位来检测。 提出了两个详细的存储单元:在一个提出的单元中,数据存储层独立于但保持靠近感测TMR堆栈,其磁化方向影响TMR堆栈自由层内的磁化配置,从而最终影响 堆栈 在另一个提出的单元中,垂直各向异性数据存储层是感测TMR堆栈的自由层,当感测电流通过时,其磁化状态将直接影响堆叠的输出电位。

    Chip front surface touchless pick and place tool or flip chip bonder

    公开(公告)号:US11282722B2

    公开(公告)日:2022-03-22

    申请号:US16550109

    申请日:2019-08-23

    摘要: A piece of pick and place tool or a chip bonding equipment, which has innovative designs enabling chip(s) on a tape to get picked up without touching its front surface, is invented. The designs use levitation technologies to receive and hold the chips detached from the tape from a face-down position. A streamline design is also invented to provide better productivity. The invented pick and place tool or chip bonder is particularly useful for applications which require using chips with zero tolerance of particle and/or contamination on the chip front surfaces.

    Magnetoresistive random access memory cell with independently operating read and write components

    公开(公告)号:US09293694B2

    公开(公告)日:2016-03-22

    申请号:US13288860

    申请日:2011-11-03

    IPC分类号: G11C11/00 H01L43/08 G11C11/16

    摘要: A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.

    Magnetically Enhanced Thin Film Coating Method and Apparatus
    9.
    发明申请
    Magnetically Enhanced Thin Film Coating Method and Apparatus 审中-公开
    磁增强薄膜涂布方法和装置

    公开(公告)号:US20120312233A1

    公开(公告)日:2012-12-13

    申请号:US13157312

    申请日:2011-06-10

    申请人: Ge Yi Yunjun Tang

    发明人: Ge Yi Yunjun Tang

    IPC分类号: C23C16/503 C23C16/507

    摘要: Methods and apparatuses for implementing magnetic field to assist PECVD to locally or globally coat the internal surface of the work piece are presented. Several permanent magnet assembly designs have been presented to provide efficient and effective magnetic field inside the work piece, which acts partially as the working chamber. The magnet assembly generates magnetic flux inside the working chamber, which increases the efficiency of PECVD process, enable PECVD process under higher gas pressure and to improve the uniformity, deposition rate, better adhesion and reduce the process temperature.

    摘要翻译: 提出了用于实现磁场以帮助PECVD局部或全局地涂覆工件的内表面的方法和装置。 已经提出了几种永久磁铁组件设计,以在工件内部提供有效和有效的磁场,其部分地作为工作室起作用。 磁体组件在工作室内产生磁通,提高了PECVD工艺的效率,使PECVD工艺在更高的气体压力下能够提高均匀性,沉积速率,更好的附着力和降低工艺温度。