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    Method and apparatus for reducing organic depletion during non-processing time periods
    1.
    发明授权
    Method and apparatus for reducing organic depletion during non-processing time periods 失效
    在非处理时间段内减少有机物耗尽的方法和装置

    公开(公告)号：US06878245B2

    公开(公告)日：2005-04-12

    申请号：US10085338

    申请日：2002-02-27

    申请人： Srinivas Gandikota ,  Chris R. McGuirk ,  Deenesh Padhi ,  Sivakami Ramanathan ,  Muhammad Atif Malik ,  Girish A. Dixit

    发明人： Srinivas Gandikota ,  Chris R. McGuirk ,  Deenesh Padhi ,  Sivakami Ramanathan ,  Muhammad Atif Malik ,  Girish A. Dixit

    IPC分类号： C25D21/14 ,  C25D21/18 ,  C25D17/00 ,  C25D21/00

    CPC分类号： C25D21/18 ,  C25D21/14

    摘要： Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods. The apparatus generally includes a selectively actuated valve in communicaiton with a fluid delivery line, wherein the valve is configured to fluidly isolate a plating cell during a non-processing time period. The valve may be controlled by a system controller, and thus, the fluid level in the cell may be controlled during a non-processing time period.

    摘要翻译： 本发明的实施方案通常提供用于在电镀浴中补充有机分子的装置和方法。 本发明的补充方法可以在实时的基础上进行，因此有机物的浓度最小化从期望的浓度水平变化。 补充方法通常包括进行预处理耗尽测量，以便确定在电镀系统中施加的每个电流密度的有机耗尽率。 一旦确定了每个电流密度的有机耗尽率，则这些耗尽率可以应用于电镀处理配方以计算每个配方步骤的有机耗尽量。 然后可以使用每个配方步骤的计算的有机耗尽体积来确定每个配方步骤所需的每单位时间的有机分子补充体积，以维持电镀溶液中所需的有机物浓度。 计算的补充量然后可以被添加到处理配方中，使得补货过程可以在处理时段期间实时发生。 该装置通常包括与流体输送管线通信的选择性致动的阀，其中阀被配置为在非处理时间段期间流体地隔离电镀槽。 阀可以由系统控制器控制，因此，可以在非处理时间段期间控制单元中的液位。

    Electroless deposition method over sub-micron apertures
    2.
    发明授权
    Electroless deposition method over sub-micron apertures 有权
    亚微米孔径上的无电沉积方法

    公开(公告)号：US06824666B2

    公开(公告)日：2004-11-30

    申请号：US10059822

    申请日：2002-01-28

    申请人： Srinivas Gandikota ,  Chris R. McGuirk ,  Deenesh Padhi ,  Muhammad Atif Malik ,  Sivakami Ramanathan ,  Girish A. Dixit ,  Robin Cheung

    发明人： Srinivas Gandikota ,  Chris R. McGuirk ,  Deenesh Padhi ,  Muhammad Atif Malik ,  Sivakami Ramanathan ,  Girish A. Dixit ,  Robin Cheung

    IPC分类号： C23C2800

    CPC分类号： H01L21/76843 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1696 ,  C23C18/1831 ,  C23C18/28 ,  C23C18/30 ,  C23C18/38 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/6708 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76874 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S428/936

    摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

    摘要翻译： 一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。 贵金属的实例包括钯和铂。 半贵金属的实例包括钴，镍和钨。 可通过无电沉积，电镀或化学气相沉积来沉积催化层。 在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。 在另一个实施方案中，催化剂层可以沉积在阻挡层上。 在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。 一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。 在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。 在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。 在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

    Electroless deposition method
    4.
    发明授权
    Electroless deposition method 有权
    无电沉积法

    公开(公告)号：US06899816B2

    公开(公告)日：2005-05-31

    申请号：US10117711

    申请日：2002-04-03

    申请人： Deenesh Padhi ,  Joseph Yahalom ,  Sivakami Ramanathan ,  Chris R. McGuirk ,  Srinivas Gandikota ,  Girish Dixit

    发明人： Deenesh Padhi ,  Joseph Yahalom ,  Sivakami Ramanathan ,  Chris R. McGuirk ,  Srinivas Gandikota ,  Girish Dixit

    IPC分类号： C23C18/18 ,  H01L21/285 ,  H01L21/288 ,  H01L21/336 ,  H01L21/768 ,  B44C1/22 ,  B05D3/04 ,  B05D3/10

    CPC分类号： H01L21/76843 ,  C23C18/1651 ,  C23C18/1893 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76874 ,  H01L29/665 ,  H01L2221/1089

    摘要： Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

    摘要翻译： 提供了通过无电沉积技术形成金属或金属硅化物层的方法和装置。 在一个方面，提供了一种用于处理衬底的方法，包括在衬底表面上沉积起始层，清洁衬底表面，以及通过将引发层暴露于无电镀溶液而在引发层上沉积导电材料。 该方法可以进一步包括用酸性溶液蚀刻衬底表面并在沉积起始层之前清洁酸性溶液的衬底。 起始层可以通过将基材表面暴露于贵金属化学电解溶液或含硼烷溶液来形成。 导电材料可以用含硼烷的还原剂沉积。 导电材料可以用作钝化层，阻挡层，种子层，或用于形成金属硅化物层。

    Selective metal encapsulation schemes
    7.
    发明授权
    Selective metal encapsulation schemes 失效
    选择性金属封装方案

    公开(公告)号：US07205228B2

    公开(公告)日：2007-04-17

    申请号：US10812480

    申请日：2004-03-30

    申请人： Deenesh Padhi ,  Srinivas Gandikota ,  Mehul Naik ,  Suketu A. Parikh ,  Girish A. Dixit

    发明人： Deenesh Padhi ,  Srinivas Gandikota ,  Mehul Naik ,  Suketu A. Parikh ,  Girish A. Dixit

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76849 ,  H01L21/288 ,  H01L21/76829 ,  H01L21/7685 ,  H01L21/76885

    摘要： A method and system of processing a semiconductor substrate includes, in one or more embodiments, depositing a protective layer on the substrate surface comprising a conductive element disposed in a dielectric material; processing the protective layer to expose the conductive element; electrolessly depositing a metallic passivating layer onto the conductive element; and removing at least a portion of the protective layer from the substrate after electroless deposition. In another aspect, a method and system of processing a semiconductor includes depositing a metallic passivating layer onto a substrate surface comprising a conductive element, masking the passivating layer to protect the underlying conductive element of the substrate surface, removing the unmasked passivating layer, and removing the mask from the passivating layer.

    摘要翻译： 在一个或多个实施例中，处理半导体衬底的方法和系统包括在衬底表面上沉积保护层，所述保护层包括布置在电介质材料中的导电元件; 处理所述保护层以暴露所述导电元件; 将金属钝化层无电沉积到导电元件上; 以及在无电沉积之后从衬底去除保护层的至少一部分。 在另一方面，一种处理半导体的方法和系统包括在包括导电元件的衬底表面上沉积金属钝化层，掩蔽钝化层以保护衬底表面的下面的导电元件，去除未屏蔽的钝化层，以及去除 掩模从钝化层。

    Electropolishing of metallic interconnects
    8.
    发明授权
    Electropolishing of metallic interconnects 失效
    电抛光金属互连

    公开(公告)号：US06951599B2

    公开(公告)日：2005-10-04

    申请号：US10188163

    申请日：2002-07-01

    申请人： Joseph Yahalom ,  Deenesh Padhi ,  Srinivas Gandikota ,  Girish A. Dixit

    发明人： Joseph Yahalom ,  Deenesh Padhi ,  Srinivas Gandikota ,  Girish A. Dixit

    IPC分类号： C25F3/16 ,  C25F3/22 ,  C25F7/00

    CPC分类号： C25F3/16 ,  C25F3/22

    摘要： Embodiments of the present invention generally relate to a method and apparatus for planarizing a substrate by electropolishing techniques. Certain embodiments of an electropolishing apparatus include a contact ring adapted to support a substrate, a cell body adapted to hold an electropolishing solution, a fluid supply system adapted to provide the electropolishing solution to the cell body, a cathode disposed within the cell body, a power supply system in electrical communication with the contact ring and the cathode, and a controller coupled to at least the fluid supply system and the power supply system. The controller may be adapted to provide a first set of electropolishing conditions to form a boundary layer between the substrate and the electropolishing solution to an initial thickness and may be adapted to provide a second set of electropolishing conditions to control the boundary layer to a subsequent thickness less than or equal to the initial thickness.

    摘要翻译： 本发明的实施例一般涉及通过电抛光技术来平坦化衬底的方法和装置。 电抛光装置的某些实施例包括适于支撑基底的接触环，适于保持电解抛光溶液的电池体，适于将电解抛光溶液提供给电池体的流体供应系统，设置在电池体内的阴极， 电源系统与接触环和阴极电连通，以及控制器，耦合到至少流体供应系统和电源系统。 控制器可以适于提供第一组电抛光条件，以在衬底和电解抛光溶液之间形成初始厚度的边界层，并且可适于提供第二组电抛光条件以将边界层控制到随后的厚度 小于或等于初始厚度。

    Electro-chemical polishing apparatus
    9.
    发明授权
    Electro-chemical polishing apparatus 有权
    电化学抛光装置

    公开(公告)号：US06723224B2

    公开(公告)日：2004-04-20

    申请号：US09920704

    申请日：2001-08-01

    申请人： Joseph Yahalom ,  Srinivas Gandikota ,  Christopher R. McGuirk ,  Deenesh Padhi

    发明人： Joseph Yahalom ,  Srinivas Gandikota ,  Christopher R. McGuirk ,  Deenesh Padhi

    IPC分类号： B23H300

    CPC分类号： C25F7/00 ,  H01L21/6708

    摘要： Generally, a method and apparatus for electro-chemical polishing a metal layer disposed on a substrate is provided. In one embodiment, the electro-chemical polishing apparatus generally includes a substrate support having a plurality of contact members, a cathode and at least one nozzle. The nozzle is adapted to centrally dispose a polishing fluid on the substrate supported by the substrate support. The cathode is adapted to couple the polishing fluid to a negative terminal of a power source. A positive terminal of the power source is electrically coupled through the contact members to the conductive layer of the substrate. The nozzle creates a turbulent flow in the portion of the polishing fluid boundary layer proximate the center of the substrate which enhances the polishing rate at the center of the substrate.

    摘要翻译： 通常，提供了一种用于电化学抛光设置在基底上的金属层的方法和装置。 在一个实施例中，电化学抛光装置通常包括具有多个接触构件，阴极和至少一个喷嘴的衬底支撑件。 喷嘴适于将抛光流体集中设置在由基板支撑件支撑的基板上。 阴极适于将抛光流体耦合到电源的负极端子。 电源的正端子通过接触构件电耦合到衬底的导电层。 喷嘴在抛光液边界层的靠近基板中心的部分产生湍流，这增强了基板中心处的抛光速率。

    Method and apparatus for improved electroplating fill of an aperture
    10.
    发明授权
    Method and apparatus for improved electroplating fill of an aperture 失效
    用于改善孔的电镀填充物的方法和装置

    公开(公告)号：US06797620B2

    公开(公告)日：2004-09-28

    申请号：US10124095

    申请日：2002-04-16

    申请人： John S. Lewis ,  Srinivas Gandikota ,  Sivakami Ramanathan ,  Girish Dixit ,  Robin Cheung ,  Fusen Chen

    发明人： John S. Lewis ,  Srinivas Gandikota ,  Sivakami Ramanathan ,  Girish Dixit ,  Robin Cheung ,  Fusen Chen

    IPC分类号： H01L2144

    CPC分类号： H01L21/2855 ,  H01L21/76879

    摘要： A method and apparatus is provided for filling apertures formed in a substrate surface by depositing materials that selectively inhibit or limit the formation or growth of subsequent layers used to fill an aperture. In one aspect, a method is provided for processing a substrate including providing a substrate having a field and apertures formed therein, wherein the apertures each have a bottom and sidewalls, depositing a seed layer on the bottom and sidewalls of the apertures, depositing a growth-inhibiting layer on at least one of the field of the substrate or an upper portion of the sidewalls of the apertures, and depositing a conductive layer on the growth-inhibiting layer and the seed layer. Deposition of the growth-inhibiting layer improves fill of the aperture from the bottom of the aperture up to the field of the substrate.

    摘要翻译： 提供了一种方法和装置，用于通过沉积选择性地抑制或限制用于填充孔的后续层的形成或生长的材料来填充形成在衬底表面中的孔。 在一个方面，提供了一种用于处理衬底的方法，包括提供具有形成在其中的场和孔的衬底，其中每个孔具有底部和侧壁，在孔的底部和侧壁上沉积种子层，沉积生长 在衬底的场中的至少一个或孔的侧壁的上部中的至少一个上的抑制层，并且在生长抑制层和种子层上沉积导电层。 生长抑制层的沉积改善了孔的填充，从孔的底部到基底的场。