摘要:
A photosensitive positive working photosensitive composition suitable for use as a photoresist, which comprises an admixture of at least one water insoluble, aqueous alkali soluble, film forming novolak resin; at least one o-diazonaphthoquinone photosensitizer; and a photoresist solvent mixture comprising a propylene glycol alkyl ether acetate and 3-methyl-3-methoxy butanol and process for producing such a composition.
摘要:
A process for producing a water insoluble, aqueous alkali soluble, film forming novolak resin having low metal ions, made by the fractionation of a phenol formaldehyde condensation product, a process for producing a resin a photoresist composition of superior quality containing such novolak resin, and a method for producing a semiconductor device using such photoresist composition.
摘要:
A process for producing a water insoluble, aqueous alkali soluble, film forming novolak resin having low metal ions, made by the fractionation of a phenol formaldehyde condensation product, a process for producing a resin a photoresist composition of superior quality containing such novolak resin, and a method for producing a semiconductor device using such photoresist composition.
摘要:
A process for producing a water insoluble, aqueous alkali soluble, film forming novolak resin fraction having a low metal ion content, made by the fractionation of a phenol formaldehyde condensation product, a process for producing a photoresist compositions containing such a novolak resin, and a method for producing a semiconductor device using such a photoresist composition.
摘要:
The present invention relates to an antireflective coating composition comprising an admixture of:a) a polymer defined by the following structure: ##STR1## where, R.sub.1 & R.sub.2 are independently hydrogen, or C.sub.1 to C.sub.5 alkylR.sub.3 is a methyl, ethyl, propyl or butyl groupR.sub.4 -R.sub.7 are independently hydrogen, or C.sub.1 to C.sub.5 alkyln=10 to 50,000(b) a fluorine-containing, sparingly water-soluble (0.1%-10% by weight in water) organic C.sub.3 -C.sub.13 aliphatic carboxylic acid;(c) a non-metallic hydroxide; and(d) a solvent.The invention also relates to a method for producing such an antireflective coating composition and to a method for producing a microelectronic device using such an antireflective coating composition in conjunction with a photoresist composition.
摘要:
The present invention provides a method for producing a film forming, fractionated novolak resin copolymer exhibiting fast photospeed and superior performance in a photoresist composition. A method is also provided for producing photoresist composition from such a fractionated novolak resin copolymer and for producing semiconductor devices using such a photoresist composition.
摘要:
The present invention provides methods for producing water insoluble, aqueous alkali soluble, film forming novolak resins having an extremely low level of metal ions, utilizing treated anion and cation exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resin and for producing semiconductor devices using such photoresist compositions.
摘要:
The present invention provides mixture of at least two novolak resins with a molecular weight distribution overlap of at least 50% and having dissolution rates which differ by a factor of at least 2.0. A method is also provided for producing such novolak resin mixtures.
摘要:
The present invention relates to an antireflective coating composition comprising a novel polymer in a solvent composition. The invention further comprises processes for using the antireflective coating composition in photolithography. The antireflective coating composition comprises a novel polymer and a solvent composition, where the novel polymer of the antireflective coating comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm and at least one unit that contains no aromatic funtionality. The solvent may be organic, preferrably, a solvent of low toxicity, or it may be water, which may additionally contain other water miscible organic solvents.
摘要:
Process for producing a photosensitizer comprising a diazo ester of a p-cresol oligomer where at least one of the hydroxy groups on the p-cresol ring has been esterified with diazo-sulfonyl chloride comprising from about 60 to 100 mole % 2,1,4 or 2,1,5-diazo sulfonyl chloride, or a mixture thereof; and a photoresist comprising an admixture of the photosensitizer, which is present in the photoresist composition in an amount sufficient to uniformly photosensitive the photoresist composition, a water insoluble, aqueous alkali soluble novolak resin, the novolak resin being present in the photoresist composition in an amount sufficient to form a substantially uniform photoresist composition, and a suitable solvent.