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32 条记录 (耗时 0.019 秒)

    Device for thermal transfer and power generation and system and method incorporating same
    2.
    发明申请
    Device for thermal transfer and power generation and system and method incorporating same 有权
    用于热转印和发电的装置及其结合的系统和方法

    公开(公告)号：US20060207643A1

    公开(公告)日：2006-09-21

    申请号：US11081986

    申请日：2005-03-16

    申请人： Stanton Weaver ,  Robert Wojnarowski

    发明人： Stanton Weaver ,  Robert Wojnarowski

    IPC分类号： H01L35/30

    CPC分类号： H01L35/32 ,  Y10T156/1092

    摘要： A device includes first and second electrically conductive substrates that are positioned opposite from one another. The device also includes a sealing layer disposed between the first and second electrically conductive substrates and a plurality of hollow structures having a conductive material, wherein the plurality of hollow structures is contained by the sealing layer between the first and second electrically conductive substrates.

    摘要翻译： 一种器件包括彼此相对定位的第一和第二导电衬底。 该装置还包括设置在第一和第二导电基底之间的密封层和具有导电材料的多个中空结构，其中多个中空结构由第一和第二导电基底之间的密封层容纳。

    UV emitting LED having mesa structure
    3.
    发明申请
    UV emitting LED having mesa structure 有权
    UV发光LED具有台面结构

    公开(公告)号：US20050264172A1

    公开(公告)日：2005-12-01

    申请号：US10854596

    申请日：2004-05-26

    申请人： Robert Wojnarowski ,  Stanton Weaver ,  Steven LeBoeuf

    发明人： Robert Wojnarowski ,  Stanton Weaver ,  Steven LeBoeuf

    IPC分类号： H01J1/62 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/08 ,  H01L33/24

    摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED. In an embodiment of the invention, the UV-LED is characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the LED's are provided with a rounded mesa configuration. In a specific embodiment, the p-type metal is positioned upon a rounded mesa, such as a parabolic mesa, formed out of the base structure materials.

    摘要翻译： 本发明涉及一种紫外线能量源，其中源是紫外线发射的LED。 在本发明的一个实施例中，UV-LED的特征在于包括衬底，p掺杂半导体材料，多量子阱，n掺杂半导体材料的基底材料，基底材料是p型金属 并且其中LED具有圆形台面构造。 在具体实施例中，p型金属位于由基底结构材料形成的圆形台面（例如抛物面台面）上。

    Flip-chip light emitting diode
    6.
    发明申请
    Flip-chip light emitting diode 失效
    倒装芯片发光二极管

    公开(公告)号：US20050087884A1

    公开(公告)日：2005-04-28

    申请号：US10693126

    申请日：2003-10-24

    申请人： Edward Stokes ,  Mark D'Evelyn ,  Stanton Weaver ,  Peter Sandvik ,  Abasifreke Ebong ,  Xian-an Cao ,  Steven LeBoeuf ,  Nikhil Taskar

    发明人： Edward Stokes ,  Mark D'Evelyn ,  Stanton Weaver ,  Peter Sandvik ,  Abasifreke Ebong ,  Xian-an Cao ,  Steven LeBoeuf ,  Nikhil Taskar

    IPC分类号： H01L23/48 ,  H01L33/38 ,  H01L33/40

    CPC分类号： H01L33/405 ,  H01L33/387 ,  H01L2933/0083

    摘要： A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).

    摘要翻译： 倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化 以限定装置台面（30,30'，30“）。 反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。 反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触， 设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。 导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。

    LED lighting system with reflective board
    7.
    发明申请
    LED lighting system with reflective board 有权
    LED照明系统带反光板

    公开(公告)号：US20070165402A1

    公开(公告)日：2007-07-19

    申请号：US11725410

    申请日：2007-03-19

    申请人： Stanton Weaver ,  Thomas Stecher

    发明人： Stanton Weaver ,  Thomas Stecher

    IPC分类号： F21V1/00

    CPC分类号： H05K1/181 ,  F21K9/00 ,  H01L25/0753 ,  H01L2924/0002 ,  H01S5/005 ,  H01S5/02216 ,  H01S5/02292 ,  H01S5/4025 ,  H05K1/0274 ,  H05K2201/0195 ,  H05K2201/0209 ,  H05K2201/2054 ,  Y02P70/611 ,  Y10S362/80 ,  H01L2924/00

    摘要： A light emitting apparatus (8) includes one or more light emitting chips (10) that are disposed on a printed circuit board (12) and emit light predominantly in a wavelength range between about 400 nanometers and about 470 nanometers. The printed circuit board includes: (i) an electrically insulating board (14); (ii) electrically conductive printed circuitry (20); and (iii) an electrically insulating solder mask (22) having vias (24) through which the one or more light emitting chips electrically contact the printed circuitry. The solder mask (22) has a reflectance of greater than 60% at least between about 400 nanometers and about 470 nanometers.

    摘要翻译： 发光装置（8）包括设置在印刷电路板（12）上的一个或多个发光芯片（10），并且发射主要在约400纳米至约470纳米的波长范围内。 印刷电路板包括：（i）电绝缘板（14）; （ii）导电印刷电路（20）; 和（iii）具有通孔（24）的电绝缘的焊接掩模（22），所述一个或多个发光芯片通过该通孔与印刷电路电接触。 焊料掩模（22）具有大于60％的反射率，至少在约400纳米和约470纳米之间。

    Device for thermal transfer and power generation
    8.
    发明申请
    Device for thermal transfer and power generation 有权
    热转印和发电装置

    公开(公告)号：US20070069357A1

    公开(公告)日：2007-03-29

    申请号：US11449002

    申请日：2006-06-07

    申请人： Stanton Weaver ,  Mehmet Arik

    发明人： Stanton Weaver ,  Mehmet Arik

    IPC分类号： H01L23/02

    CPC分类号： H01L35/08 ,  H01J45/00 ,  H01L35/32

    摘要： A system is provided. The system includes a device that includes top and bottom thermally conductive substrates positioned opposite to one another, wherein a top surface of the bottom thermally conductive substrate is substantially atomically flat and a thermal blocking layer disposed between the top and bottom thermally conductive substrates. The device also includes top and bottom electrodes separated from one another between the top and bottom thermally conductive substrates to define a tunneling path, wherein the top electrode is disposed on the thermal blocking layer and the bottom electrode is disposed on the bottom thermally conductive substrate.

    摘要翻译： 提供了一个系统。 该系统包括一个装置，该装置包括彼此相对定位的顶部和底部导热基底，其中底部导热基底的顶表面基本上是原子上平坦的，以及设置在顶部和底部导热基底之间的热阻挡层。 该装置还包括在顶部和底部导热基板之间彼此分离的顶部和底部电极以限定隧道路径，其中顶部电极设置在热阻挡层上，而底部电极设置在底部导热基底上。

    Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
    10.
    发明申请
    Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens 有权
    具有无定形含氟聚合物密封剂和透镜的发光二极管（LED）

    公开(公告)号：US20050006651A1

    公开(公告)日：2005-01-13

    申请号：US10609040

    申请日：2003-06-27

    申请人： Steven LeBoeuf ,  Donald Buckley ,  Stanton Weaver

    发明人： Steven LeBoeuf ,  Donald Buckley ,  Stanton Weaver

    IPC分类号： H01L33/50 ,  H01L27/15

    CPC分类号： H01L33/502 ,  H01L33/44 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16225 ,  H05K1/0203 ,  H05K2201/10106

    摘要： A lens and encapsulant made of an amorphous fluoropolymer for a light-emitting diode (LED) or diode laser, such as an ultraviolet (UV) LED (UVLED). A semiconductor diode die (114) is formed by growing a diode (110) on a substrate layer (115) such as sapphire. The diode die (114) is flipped so that it emits light (160, 365) through the face (150) of the layer (115). An amorphous fluoropolymer encapsulant encapsulates the emitting face of the diode die (114), and may be shaped as a lens to form an integral encapsulant/lens. Or, a lens (230, 340) of amorphous fluoropolymer may be joined to the encapsulant (220). Additional joined or separate lenses (350) may also be used. The encapsulant/lens is transmissive to UV light as well as infrared light. Encapsulating methods are also provided.

    摘要翻译： 由用于发光二极管（LED）或二极管激光器（例如紫外线（UV）LED（UVLED））的无定形含氟聚合物制成的透镜和密封剂。 通过在诸如蓝宝石的衬底层（115）上生长二极管（110）来形成半导体二极管管芯（114）。 二极管管芯（114）被翻转，使得它通过层（115）的面（150）发光（160,365）。 无定形氟聚合物密封剂封装二极管管芯（114）的发射面，并且可以被成形为透镜以形成整体的密封剂/透镜。 或者，可以将无定形含氟聚合物的透镜（230,340）接合到密封剂（220）。 还可以使用附加的连接或分开的透镜（350）。 密封剂/透镜对于紫外线以及红外光是透射的。 还提供封装方法。