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    Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level
    1.
    发明授权
    Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level 有权
    用于封装的MEMS的衬底接触和在晶片级使衬底接触的方法

    公开(公告)号：US07316965B2

    公开(公告)日：2008-01-08

    申请号：US11158793

    申请日：2005-06-21

    申请人： Stephen R. Hooper ,  Hemant D. Desai ,  William G. McDonald ,  Arvind S. Salian

    发明人： Stephen R. Hooper ,  Hemant D. Desai ,  William G. McDonald ,  Arvind S. Salian

    IPC分类号： H01L21/00

    CPC分类号： B81B3/0086 ,  B81B2201/0235 ,  B81B2207/07 ,  B81B2207/098 ,  B81C2203/0118 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： A MEMS device (100) is provided that includes a handle layer (108) having a sidewall (138), a cap (132) overlying said handle layer (108), said cap (132) having a sidewall (138), and a conductive material (136) disposed on at least a portion of said sidewall of said cap (138) and said sidewall of said handle layer (138) to thereby electrically couple said handle layer (108) to said cap (132). A wafer-level method for manufacturing the MEMS device from a substrate (300) comprising a handle layer (108) and a cap (132) overlying the handle layer (108) is also provided. The method includes making a first cut through the cap (132) and at least a portion of the substrate (300) to form a first sidewall (138), and depositing a conductive material (136) onto the first sidewall (138) to electrically couple the cap (132) to the substrate (300).

    摘要翻译： 提供了一种MEMS器件（100），其包括具有侧壁（138）的手柄层（108），覆盖所述手柄层（108）的盖（132），所述盖（132）具有侧壁（138） 导电材料（136），设置在所述盖子（138）的所述侧壁和所述手柄层（138）的所述侧壁的至少一部分上，从而将所述手柄层（108）电耦合到所述盖子（132）。 还提供了用于从包括手柄层（108）和覆盖在手柄层（108）上的盖子（132）的衬底（300）制造MEMS器件的晶片级方法。 该方法包括通过帽（132）和基底（300）的至少一部分进行第一次切割以形成第一侧壁（138），以及将导电材料（136）沉积到第一侧壁（138）上以电 将盖（132）耦合到基板（300）。

    Methods and apparatus having wafer level chip scale package for sensing elements
    2.
    发明授权
    Methods and apparatus having wafer level chip scale package for sensing elements 有权
    具有用于感测元件的晶片级芯片级封装的方法和装置

    公开(公告)号：US07109055B2

    公开(公告)日：2006-09-19

    申请号：US11039688

    申请日：2005-01-20

    申请人： William G. McDonald ,  Stephen R. Hooper ,  Arvind S. Salian

    发明人： William G. McDonald ,  Stephen R. Hooper ,  Arvind S. Salian

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00309 ,  B81C2201/053

    摘要： Methods are provided for manufacturing a sensor. The method comprises depositing a sacrificial material at a first predetermined thickness onto a wafer having at least one sense element mounted thereon, the sacrificial material deposited at least partially onto the at least one sense element, forming an encapsulating layer at a second predetermined thickness less than the first predetermined thickness over the wafer and around the deposited sacrificial material, and removing the sacrificial material. Apparatus for a sensor manufactured by the aforementioned method are also provided.

    摘要翻译： 提供了制造传感器的方法。 该方法包括将第一预定厚度的牺牲材料沉积到具有安装在其上的至少一个感测元件的晶片上，所述牺牲材料至少部分地沉积在所述至少一个感测元件上，形成第二预定厚度的封装层， 在晶片上方并围绕沉积的牺牲材料的第一预定厚度，以及去除牺牲材料。 还提供了通过上述方法制造的传感器的装置。

    Dual port pressure sensor
    8.
    发明授权
    Dual port pressure sensor 有权
    双口压力传感器

    公开(公告)号：US08307714B1

    公开(公告)日：2012-11-13

    申请号：US13151404

    申请日：2011-06-02

    申请人： Stephen R. Hooper ,  William G. McDonald

    发明人： Stephen R. Hooper ,  William G. McDonald

    IPC分类号： G01L7/00

    CPC分类号： G01L19/141 ,  G01L13/025 ,  G01L19/0038

    摘要： A dual port pressure sensor has a lead frame having a flag having a first opening and a second opening. The lead frame has a flag having a first opening and a second opening. An encapsulant holds the lead frame. The encapsulant is over a top of the flag and a bottom of the flag is uncovered by the encapsulant. A first opening in the encapsulant is aligned with and larger than the first opening in the flag, and a second opening in the encapsulant is aligned with the second opening in the flag. A pressure sensor transducer is attached to the bottom of the flag and covers the first opening in the flag and provides an electrically detectable correlation to a pressure differential based on a first pressure received on its top side and a second pressure received on its bottom side. An integrated circuit is attached to the bottom of the flag and is electrically coupled to the pressure sensor. A lid forming an enclosure with the bottom of the flag. The pressure sensor transducer receives the first pressure through the first opening in the encapsulant and the first opening in the flag and the second pressure through the second opening in the encapsulant, the second opening in the flag, and the enclosure.

    摘要翻译： 双端口压力传感器具有带有具有第一开口和第二开口的标志的引线框架。 引线框架具有具有第一开口和第二开口的标志。 密封剂保持引线框架。 密封剂在标志的顶部之上，标志的底部被封装剂覆盖。 密封剂中的第一开口与标志中的第一开口对准并且大于标志中的第一开口，并且密封剂中的第二开口与标记中的第二开口对齐。 压力传感器传感器连接到标志的底部并覆盖标志中的第一开口，并且基于在其顶侧接收的第一压力和在其底侧上接收的第二压力而提供与压力差的电可检测的相关性。 集成电路连接到标志的底部并且电耦合到压力传感器。 盖子形成与旗子底部的封闭物。 压力传感器传感器通过密封剂中的第一开口和标志中的第一开口接收第一压力，并且通过密封剂中的第二开口，标志中的第二开口和外壳接收通过第二压力的第一压力。

    Method of making a dual port pressure sensor
    10.
    发明授权
    Method of making a dual port pressure sensor 有权
    制造双口压力传感器的方法

    公开(公告)号：US09021689B2

    公开(公告)日：2015-05-05

    申请号：US13151409

    申请日：2011-06-02

    申请人： Stephen R. Hooper ,  William G. McDonald

    发明人： Stephen R. Hooper ,  William G. McDonald

    IPC分类号： H01C17/02 ,  G01L13/02 ,  H01L23/31 ,  G01L19/00 ,  G01L19/14 ,  H01L29/84

    CPC分类号： G01L13/025 ,  G01L19/0038 ,  G01L19/141 ,  H01L23/315 ,  H01L29/84 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49171 ,  Y10T29/43 ,  Y10T29/49007 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49146 ,  H01L2924/00

    摘要： A method of forming a dual port pressure sensor includes forming a first opening and a second opening in a flag of a lead frame. An encapsulant is molded to hold the lead frame in which the encapsulant is over a top of the flag and a bottom of the flag is uncovered by the encapsulant. A first opening in the encapsulant is aligned with and larger than the first opening in the flag and a second opening in the encapsulant aligned with the second opening in the flag. A pressure sensor transducer is attached to the bottom of the flag to cover the first opening in the flag, wherein the pressure sensor transducer provides an electrically detectable correlation to a pressure differential based on a first pressure received on its top side and a second pressure received on its bottom side. An integrated circuit is attached to the bottom of the flag. The integrated circuit is electrically coupled to the pressure sensor. A lid is attached to the encapsulant to form an enclosure around the bottom of the flag. The pressure sensor transducer receives the first pressure through the first opening in the encapsulant and the first opening in the flag and the second pressure through the second opening in the encapsulant, the second opening in the flag, and the enclosure.

    摘要翻译： 形成双端口压力传感器的方法包括在引线框架的标志中形成第一开口和第二开口。 密封剂被模制以保持引线框架，其中密封剂在标志的顶部之上，并且标记的底部被封装剂覆盖。 密封剂中的第一开口与标志中的第一开口对齐并且大于标志中的第一开口，并且密封剂中的第二开口与标记中的第二开口对齐。 压力传感器传感器连接到标志的底部以覆盖标志中的第一开口，其中压力传感器换能器基于在其顶侧接收的第一压力和接收到的第二压力而提供与压差的电可检测相关性 在它的底部。 集成电路附在标志的底部。 集成电路电耦合到压力传感器。 将盖子附接到密封剂以形成围绕标志底部的外壳。 压力传感器传感器通过密封剂中的第一开口和标志中的第一开口接收第一压力，并且通过密封剂中的第二开口，标志中的第二开口和外壳接收通过第二压力的第一压力。