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    INTEGRATED CIRCUIT DEVICE INCLUDING THROUGH-SILICON VIA STRUCTURE HAVING OFFSET INTERFACE
    2.
    发明申请
    INTEGRATED CIRCUIT DEVICE INCLUDING THROUGH-SILICON VIA STRUCTURE HAVING OFFSET INTERFACE 有权
    集成电路设备，通过具有偏移接口的结构，包括硅

    公开(公告)号：US20130119547A1

    公开(公告)日：2013-05-16

    申请号：US13603978

    申请日：2012-09-05

    申请人： Su-kyoung Kim ,  Gil-heyun Choi ,  Byung-Iyul Park ,  Kwang-jin Moon ,  Kun-sang Park ,  Dong-chan Lim ,  Do-sun Lee

    发明人： Su-kyoung Kim ,  Gil-heyun Choi ,  Byung-Iyul Park ,  Kwang-jin Moon ,  Kun-sang Park ,  Dong-chan Lim ,  Do-sun Lee

    IPC分类号： H01L23/532 ,  H01L23/498

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L25/0657 ,  H01L2224/16 ,  H01L2924/13091 ,  H01L2924/00

    摘要： An integrated circuit device includes a substrate through which a first through-hole extends, and an interlayer insulating film on the substrate, the interlayer insulating film having a second through-hole communicating with the first through-hole. A Through-Silicon Via (TSV) structure is provided in the first through-hole and the second through-hole. The TSV structure extends to pass through the substrate and the interlayer insulating film. The TSV structure comprises a first through-electrode portion having a top surface located in the first through-hole, and a second through-electrode portion having a bottom surface contacting with the top surface of the first through-electrode portion and extending from the bottom surface to at least the second through-hole. Related fabrication methods are also described.

    摘要翻译： 集成电路器件包括：第一通孔延伸穿过的衬底和衬底上的层间绝缘膜，所述层间绝缘膜具有与第一通孔连通的第二通孔。 在第一通孔和第二通孔中设置有硅通孔（TSV）结构。 TSV结构延伸穿过衬底和层间绝缘膜。 TSV结构包括具有位于第一通孔中的顶表面的第一通电极部分和具有与第一贯穿电极部分的顶表面接触并从底部延伸的底表面的第二通电极部分 表面至少到第二通孔。 还描述了相关的制造方法。

    Method of forming a metal layer and a method of fabricating a semiconductor device
    3.
    发明授权
    Method of forming a metal layer and a method of fabricating a semiconductor device 有权
    形成金属层的方法和制造半导体器件的方法

    公开(公告)号：US08119526B2

    公开(公告)日：2012-02-21

    申请号：US12955093

    申请日：2010-11-29

    申请人： Eun-ji Jung ,  Woong-hee Sohn ,  Su-kyoung Kim ,  Gil-heyun Choi ,  Byung-hee Kim

    发明人： Eun-ji Jung ,  Woong-hee Sohn ,  Su-kyoung Kim ,  Gil-heyun Choi ,  Byung-hee Kim

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76849 ,  H01L21/28562

    摘要： A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on the insulating layer and the metal layer, wherein the second metal capping layer has different thicknesses on the insulating layer and the metal layer.

    摘要翻译： 一种形成金属膜的方法包括制备其上露出由第一金属形成的绝缘层和金属层的基板; 以及通过将第二金属的有机前体供给到所述基板上以同时在所述绝缘层和所述金属层上沉积所述第二金属而形成金属覆盖层，其中所述第二金属覆盖层在所述绝缘层和所述金属层上具有不同的厚度 。