摘要:
Provided are highly reliable, high density stacked semiconductor packages including a plurality of semiconductor chips and a method of manufacturing the highly reliable, high density semiconductor package. An embodiment of the stacked semiconductor package includes upper and lower semiconductor packages that are sequentially stacked. The upper and lower semiconductor packages include inner leads connected to semiconductor chips. The lower semiconductor package may further include a plurality of outer leads connected to the inner leads of the lower semiconductor package and that extend outside a encapsulant to be electrically connected to the inner leads of the upper semiconductor package.
摘要:
In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance.
摘要:
A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.
摘要:
Semiconductor packages including a substrate, a plurality of first semiconductor chips stacked on the substrate, a second semiconductor chip interposed between the substrate and a lowermost semiconductor chip among the first semiconductor chips, and a supporting member disposed between the substrate and the lowermost semiconductor chip among the first semiconductor chips to support the first semiconductor chips, may be provided. The supporting member may include a passive element such as a capacitor, a resistor, or an inductor. By including the supporting member, the semiconductor packages may achieve a smaller planar size and have an improved tolerance for subsequent interconnections.