公开(公告)号：US20160322782A1

公开(公告)日：2016-11-03

申请号：US15107812

申请日：2014-12-30

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Robert M. Farrell ,  Shuji Nakamura ,  Claude C.A. Weisbuch

IPC: H01S5/04 ,  H01L27/15 ,  H01L33/46 ,  H01S5/042 ,  H01S5/40 ,  H01L33/06 ,  H01S5/32 ,  H01L33/00 ,  H01S5/125 ,  H01S5/10 ,  H01L33/14 ,  H01S5/343 ,  H01L33/32 ,  H01L33/18

CPC classification number: H01S5/041 ,  H01L27/153 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/18 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0083 ,  H01S5/022 ,  H01S5/0287 ,  H01S5/042 ,  H01S5/1003 ,  H01S5/125 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333 ,  H01S5/4025 ,  H01S5/4043 ,  H01S5/4093

Abstract: The monolithic integration of optically-pumped and electrically-injected III-nitride light-emitting devices. This structure does not involve the growth of p-type layers after an active region for a first III-nitride light-emitting device, and thus avoids high temperature growth steps after the fabrication of the active region for the first III-nitride light emitting device. Since electrical injection in such a structure cannot be possible, a second III-nitride light-emitting device is used to optically pump the first III-nitride light emitting device. This second III-nitride light emitting device emits light at a shorter wavelength region of the optical spectrum than the first III-nitride light emitting device, so that it can be absorbed by the active region of the first III-nitride light-emitting device, which in turn emits light at a longer wavelength region of the optical spectrum than the second III-nitride light emitting device.

Abstract translation: 光泵浦和电注入的III族氮化物发光器件的单片集成。 这种结构不涉及在用于第一III族氮化物发光器件的有源区域之后的p型层的生长，并且因此在制造用于第一III族氮化物发光器件的有源区域之后避免高温生长步骤 。 由于在这种结构中的电注入是不可能的，所以使用第二III族氮化物发光器件来光学地泵浦第一III族氮化物发光器件。 该第二III族氮化物发光器件在比第一III族氮化物发光器件的光谱的较短波长区域发光，从而可以被第一III族氮化物发光器件的有源区域吸收， 其继而在第二III族氮化物发光器件的光谱的较长波长区域发射光。

公开(公告)号：US20130099277A1

公开(公告)日：2013-04-25

申请号：US13660782

申请日：2012-10-25

Applicant: The Regents of the University of California

Inventor： James S. Speck ,  Evelyn L. Hu ,  Claude C.A. Weisbuch ,  Yong Seok Choi ,  Gregor Koblmuller ,  Michael Iza ,  Christophe Hurni

IPC: H01L33/02 ,  H01L21/306 ,  H01L29/20

CPC classification number: H01L21/30621 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

Abstract: A method of selective dry etching of N-face (Al,In,Ga)N heterostructures through the incorporation of an etch-stop layer into the structure, and a controlled, highly selective, etch process. Specifically, the method includes: (1) the incorporation of an easily formed, compatible etch-stop layer in the growth of the device structure, (2) the use of a laser-lift off or similar process to decouple the active layer from the original growth substrate, and (3) the achievement of etch selectivity higher than 14:1 on N-face (Al,In,Ga)N.

Abstract translation: 通过将蚀刻停止层结合到结构中以及受控的高选择性蚀刻工艺，选择性地干蚀刻N面（Al，In，Ga）N异质结构的方法。 具体地说，该方法包括：（1）在器件结构的生长中结合容易形成的兼容的蚀刻停止层，（2）使用激光剥离或类似工艺来将活性层与 原始生长衬底，和（3）在N面（Al，In，Ga）N上实现高于14：1的蚀刻选择性。