公开(公告)号：US20220102160A1

公开(公告)日：2022-03-31

申请号：US17547238

申请日：2021-12-10

Applicant: Tokyo Electron Limited ,  UNIVERSITE D'ORLEANS

Inventor： Shigeru TAHARA ,  Jacques FAGUET ,  Kaoru MAEKAWA ,  Kumiko ONO ,  Nagisa SATO ,  Remi DUSSART ,  Thomas TILLOCHER ,  Philippe LEFAUCHEUX ,  Gaëlle ANTOUN

IPC: H01L21/311 ,  H01J37/32

Abstract: An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.

公开(公告)号：US20160326646A1

公开(公告)日：2016-11-10

申请号：US15212774

申请日：2016-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Kaoru MAEKAWA ,  Tatsufumi HAMADA ,  Hiroyuki NAGAI

IPC: C23C16/455 ,  C23C16/40 ,  C23C14/14 ,  C23C14/34 ,  H01L21/768 ,  C23C16/02 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3105 ,  C23C16/18 ,  C23C16/48

CPC classification number: C23C16/45553 ,  C23C14/14 ,  C23C14/34 ,  C23C16/02 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/401 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45536 ,  C23C16/481 ,  H01L21/02126 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.

公开(公告)号：US20150126027A1

公开(公告)日：2015-05-07

申请号：US14598788

申请日：2015-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Tatsufumi HAMADA ,  Kaoru MAEKAWA

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/28562 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76823 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76867 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device includes: forming an insulating film on a substrate where a first conductive film is formed; forming a recess in the insulating film such that the first conductive film is exposed in a portion of the recess; forming a metal oxide film to cover the insulating film and the first conductive film after forming a recess; performing a hydrogen radical treatment of irradiating the substrate with atomic hydrogen after forming a metal oxide film; and forming a second conductive film in the recess.

Abstract translation: 一种制造半导体器件的方法包括：在形成有第一导电膜的基板上形成绝缘膜; 在所述绝缘膜中形成凹部，使得所述第一导电膜在所述凹部的一部分中露出; 在形成凹部之后形成金属氧化物膜以覆盖绝缘膜和第一导电膜; 在形成金属氧化物膜之后进行用原子氢照射基板的氢自由基处理; 以及在所述凹部中形成第二导电膜。

公开(公告)号：US20200381264A1

公开(公告)日：2020-12-03

申请号：US16770084

申请日：2018-12-11

Applicant: TOKYO ELECTRON LIMITED ,  UNIVERSITE D'ORLEANS

Inventor： Koichi YATSUDA ,  Kaoru MAEKAWA ,  Nagisa SATO ,  Kumiko ONO ,  Shigeru TAHARA ,  Jacques FAGUET ,  Remi DUSSART ,  Thomas TILLOCHER ,  Philippe LEFAUCHEUX ,  Gaëlle ANTOUN

IPC: H01L21/311

Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

公开(公告)号：US20150021775A1

公开(公告)日：2015-01-22

申请号：US14510388

申请日：2014-10-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Tatsufumi HAMADA ,  Kaoru MAEKAWA

IPC: H01L23/532 ,  H01L21/02 ,  C23C16/455 ,  C23C16/06 ,  C23C16/50 ,  C23C16/46 ,  H01L21/768 ,  C23C16/40

CPC classification number: H01L23/53238 ,  C23C16/045 ,  C23C16/06 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere.

Abstract translation: 一种在形成有凹部的绝缘层上形成含金属元素层的半导体装置的制造方法，其特征在于，包括：在包括所述凹部的绝缘层上形成主要包含所述金属元素的氧化物的氧化物层; 通过在还原气氛下进行退火，使氧化物层成为硅酸盐，形成主要由金属元素的硅酸盐构成的硅酸盐层。

公开(公告)号：US20150110975A1

公开(公告)日：2015-04-23

申请号：US14566807

申请日：2014-12-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Kaoru MAEKAWA ,  Tatsufumi HAMADA ,  Hiroyuki NAGAI

IPC: C23C16/455 ,  C23C16/42 ,  C23C16/34 ,  C23C16/48 ,  C23C16/40

CPC classification number: C23C16/45553 ,  C23C14/14 ,  C23C14/34 ,  C23C16/02 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/401 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45536 ,  C23C16/481 ,  H01L21/02126 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.

Abstract translation: 在底层和铜膜之间形成含锰膜的方法包括使锰化合物气体与含氮反应气体反应以在底层上形成含氮锰膜; 使锰化合物气体与还原反应气体反应，热分解锰化合物气体，或通过能量或活性物质的照射对锰化合物气体进行分解反应，在含氮锰膜上形成金属锰膜。

公开(公告)号：US20140374904A1

公开(公告)日：2014-12-25

申请号：US14478436

申请日：2014-09-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Kaoru MAEKAWA ,  Hiroaki KAWASAKI ,  Tatsufumi HAMADA

IPC: H01L23/482 ,  H01L21/324 ,  C25D7/12 ,  C23C16/06 ,  C23C16/44 ,  H01L21/306 ,  H01L21/48

CPC classification number: H01L23/4827 ,  C23C16/06 ,  C23C16/4402 ,  C25D7/12 ,  H01L21/306 ,  H01L21/324 ,  H01L21/4814 ,  H01L21/67766 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure provides a semiconductor device, including: an insulation layer and a wiring line layer, the wiring line layer including a wiring line having a line width and a line height, at least one of which is 15 nm or less, and containing Ni or Co as a main component thereof. In another embodiment, there is provided a semiconductor device manufacturing method for manufacturing a semiconductor device including an insulation layer and a wiring line layer, including: forming the wiring line layer on the insulation layer, the wiring line layer including a wiring line having a line width and a line height, at least one of which is 15 nm or less, and containing Ni or Co as a main component thereof.

Abstract translation: 本发明提供一种半导体器件，包括：绝缘层和布线层，所述布线线层包括具有线宽和线高度的布线，其至少一个为15nm以下，并且包含Ni 或Co作为其主要成分。 在另一实施例中，提供一种用于制造包括绝缘层和布线层的半导体器件的半导体器件制造方法，包括：在绝缘层上形成布线层，布线线层包括具有线的布线 宽度和线高度，其中至少一个为15nm或更小，并且包含Ni或Co作为其主要成分。