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    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING SEMICONDUCTOR MEMORY DEVICE
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：US20200091174A1

    公开(公告)日：2020-03-19

    申请号：US16283627

    申请日：2019-02-22

    Applicant: Toshiba Memory Corporation

    Inventor： Tomoya SANUKI ,  Yusuke HIGASHI ,  Hideto HORII ,  Masaki KONDO ,  Hiroki TOKUHIRA ,  Hideaki AOCHI

    IPC: H01L27/11582 ,  H01L27/1157 ,  G11C16/04 ,  G11C16/26 ,  G11C16/16

    Abstract: An example semiconductor device includes: n conductive layers including first to nth conductive layers stacked in a first direction; a first semiconductor region of a first conductive type; a second semiconductor region of a second conductive type closer to the nth conductive layer than the first semiconductor region; a semiconductor layer provided between the first semiconductor region and the second semiconductor region, extending in the first direction, penetrating the n conductive layers, and having an impurity concentration lower than a first conductive impurity concentration of the first region and a second conductive impurity concentration of the second region; n charge storage regions including first to nth charge storage regions provided between the n conductive layers and the semiconductor layer, and a control circuit that controls a voltage applied to the n conductive layers to always prevent charges from being stored in at least one of the n charge storage regions.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190027494A1

    公开(公告)日：2019-01-24

    申请号：US16138619

    申请日：2018-09-21

    Applicant: Toshiba Memory Corporation

    Inventor： Yoshiaki FUKUZUMI ,  Shinya ARAI ,  Masaki TSUJI ,  Hideaki AOCHI ,  Hiroyasu TANAKA

    IPC: H01L27/11582 ,  H01L29/423 ,  H01L27/11565 ,  H01L29/792 ,  H01L29/66 ,  H01L27/11575

    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20200335517A1

    公开(公告)日：2020-10-22

    申请号：US16918005

    申请日：2020-07-01

    Applicant: Toshiba Memory Corporation

    Inventor： Yoshiaki FUKUZUMI ,  Shinya ARAI ,  Masaki TSUJI ,  Hideaki AOCHI ,  Hiroyasu TANAKA

    IPC: H01L27/11582 ,  H01L29/66 ,  H01L29/792 ,  H01L27/11575 ,  H01L27/11565 ,  H01L29/423

    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
    9.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开

    公开(公告)号：US20190333927A1

    公开(公告)日：2019-10-31

    申请号：US16508577

    申请日：2019-07-11

    Applicant: Toshiba Memory Corporation

    Inventor： Yoshiaki FUKUZUMI ,  Hideaki AOCHI

    IPC: H01L27/11573 ,  H01L27/11568 ,  H01L21/768 ,  H01L21/18 ,  H01L27/11582

    Abstract: According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.

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