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    Semiconductor memory device
    3.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US10991713B2

    公开(公告)日：2021-04-27

    申请号：US16298865

    申请日：2019-03-11

    Applicant: TOSHIBA MEMORY CORPORATION

    Inventor： Satoshi Nagashima ,  Keisuke Nakatsuka ,  Fumitaka Arai ,  Shinya Arai ,  Yasuhiro Uchiyama

    IPC: H01L27/11578 ,  G11C11/40 ,  H01L27/1157

    Abstract: According to one embodiment, a semiconductor memory device includes: first and second signal lines; a first memory cell storing first information by applying voltage across the first signal line and a first interconnect layer; a second memory cell storing second information by applying voltage across the second signal line and a second interconnect layer; a first conductive layer provided on the first and second signal lines; third and fourth signal lines provided on the first conductive layer; a third memory cell storing third information by applying voltage across the third signal line and a third interconnect layer; and a fourth memory cell storing fourth information by applying voltage across the fourth signal line and a fourth interconnect layer.

    Semiconductor memory device
    4.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US10978471B2

    公开(公告)日：2021-04-13

    申请号：US16351207

    申请日：2019-03-12

    Applicant: Toshiba Memory Corporation

    Inventor： Keisuke Nakatsuka

    IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11565

    Abstract: A semiconductor memory device includes first structure bodies and second structure bodies arranged alternately along a first direction. The first structure body includes electrode films arranged along a second direction. The second structure body includes columnar members, first insulating members, and second insulating members. The columnar member includes a semiconductor member extending in the second direction and a charge storage member provided between the semiconductor member and the electrode film. The second insulating members are arranged along a third direction. Lengths in the first direction of the second insulating members are longer than lengths in the first direction of the first insulating members. Positions of the second insulating members in the third direction are different from each other between the second structure bodies adjacent to each other in the first direction. The columnar members and the first insulating members are arranged alternately between the second insulating members.

    Magnetoresistive memory device
    5.
    发明授权
    Magnetoresistive memory device 有权

    公开(公告)号：US09934834B2

    公开(公告)日：2018-04-03

    申请号：US15248247

    申请日：2016-08-26

    Applicant: TOSHIBA MEMORY CORPORATION

    Inventor： Keisuke Nakatsuka ,  Katsuhiko Hoya

    IPC: G11C11/44 ,  G11C11/16

    CPC classification number: G11C11/1673 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1697

    Abstract: A magnetoresistive memory device includes a variable resistance element and a read circuit. The resistance element has a resistance state, which is one of switchable first and second resistance states. The first and second resistance states exhibit different resistances. Each of the first and second resistance states is reached by a current flowing through the variable resistance element in one of opposing first and second directions. The read circuit passes a read current through the variable resistance element autonomously in the first or second direction in accordance with the resistance state of the variable resistance element.

    Semiconductor memory device
    9.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US10748920B2

    公开(公告)日：2020-08-18

    申请号：US16126209

    申请日：2018-09-10

    Applicant: TOSHIBA MEMORY CORPORATION

    Inventor： Keisuke Nakatsuka

    IPC: H01L29/76 ,  H01L27/11582 ,  H01L29/40 ,  H01L27/11565 ,  H01L21/28 ,  H01L29/792

    Abstract: According to one embodiment, a semiconductor memory device includes a plurality of electrode films, a semiconductor member, a tunneling insulating film, a charge storage member, and a blocking insulating film. The plurality of electrode films are arranged to be separated from each other along a first direction. The semiconductor member extends in the first direction. The tunneling insulating film is provided between the semiconductor member and the electrode films. The charge storage member is provided between the tunneling insulating film and the electrode films. The blocking insulating film is provided between the charge storage member and the electrode films. The blocking insulating film includes a first film contacting the charge storage film and including carbon-containing silicon oxide, and a second film contacting the electrode films and including hafnium oxide or aluminum oxide.

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