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    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION THEREOF
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20090267081A1

    公开(公告)日：2009-10-29

    申请号：US12067407

    申请日：2006-09-12

    申请人： Takashi Udagawa

    发明人： Takashi Udagawa

    IPC分类号： H01L29/12 ,  H01L21/20

    CPC分类号： H01L29/1608 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/16 ,  Y10S438/933

    摘要： A semiconductor device includes a substrate formed of a single crystal. a silicon carbide layer disposed on a surface of the single crystal substrate and an intermediate layer disposed on a surface of the silicon carbide layer and formed of a Group III nitride semiconductor, wherein the silicon carbide layer is formed of a cubic crystal stoichiometrically containing silicon copiously and the surface thereof has a (3×3) reconstruction structure. The semiconductor device is fabricated by a method including a first step of blowing a hydrocarbon gas on the surface of the substrate, thereby inducing adsorption of hydrocarbon thereon, a second step of heating the substrate having adsorbed the hydrocarbon to a temperature exceeding a temperature used for the adsorption of the hydrocarbon while irradiating the surface of the substrate with electrons and consequently giving rise to a silicon carbide layer formed of a cubic crystal stoichiometrically containing silicon copiously and provided with a surface having a (3×3) reconstruction structure and a third step of supplying a gaseous raw material containing nitrogen and a gaseous raw material containing a Group III element to the surface of the silicon carbide layer and consequently giving rise to the intermediate layer formed of the Group III nitride semiconductor.

    摘要翻译： 半导体器件包括由单晶形成的衬底。 设置在单晶衬底的表面上的碳化硅层和设置在碳化硅层的表面上并由III族氮化物半导体形成的中间层，其中碳化硅层由含有大量化学计量的硅的立方晶体形成 其表面具有（3×3）重构结构。 该半导体器件通过包括在基底表面吹入烃气体从而诱导其上的烃吸附的第一步骤的方法制造，第二步是将吸附有烃的基底加热到超过用于 在用电子照射衬底表面的同时吸附碳氢化合物，并且因此产生由具有（3×3）重构结构的表面形成的具有化学计量含硅的立方晶体的碳化硅层，并且提供第三步骤 将含有氮的气态原料和含有III族元素的气态原料输送到碳化硅层的表面，由此产生由III族氮化物半导体形成的中间层。

    METHOD FOR FABRICATING SEMICONDUCTOR LAYER AND LIGHT-EMITTING DIODE
    8.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR LAYER AND LIGHT-EMITTING DIODE 失效
    制备半导体层和发光二极管的方法

    公开(公告)号：US20090127571A1

    公开(公告)日：2009-05-21

    申请号：US12065363

    申请日：2006-08-30

    申请人： Takashi Udagawa

    发明人： Takashi Udagawa

    IPC分类号： H01L21/20 ,  H01L33/00

    CPC分类号： H01L21/0262 ,  C30B23/02 ,  C30B23/025 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02461 ,  H01L21/0254 ,  H01L33/005 ,  H01L33/007

    摘要： A semiconductor layer containing defects only in a small density, possessing good quality and exhibiting a large ionic bonding property as to GaN, for example, is formed on a semiconductor layer, such as a silicon carbide layer, which is made of a material possessing a small ionicity and exhibiting a strong covalent bonding property. A method for forming a semiconductor layer includes forming on the surface of a first semiconductor layer 102 possessing a first ionicity a second semiconductor layer 103 possessing a second ionicity larger than the first ionicity. The second semiconductor layer 103 is formed while irradiating the surface of the first semiconductor layer existing on the side for forming the second semiconductor layer with electrons in a vacuum.

    摘要翻译： 在诸如碳化硅层的半导体层上形成包含例如碳化硅层的半导体层，该半导体层包含仅具有小密度的缺陷，具有优良质量并且表现出与GaN类相比具有大的离子键合性能的半导体层，该半导体层由具有 表现出强的共价键合性。 形成半导体层的方法包括在具有第一离子性的第一半导体层102的表面上形成具有大于第一离子性的第二离子性的第二半导体层103。 在真空中用电子照射存在于用于形成第二半导体层的一侧上的第一半导体层的表面，形成第二半导体层103。

    Multicolor light-emitting lamp and light source
    9.
    发明授权
    Multicolor light-emitting lamp and light source 失效
    多色发光灯和光源

    公开(公告)号：US07479731B2

    公开(公告)日：2009-01-20

    申请号：US10486985

    申请日：2002-08-16

    申请人： Takashi Udagawa

    发明人： Takashi Udagawa

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： H01L33/30 ,  H01L25/0753 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： The present invention provides a technique for fabricating a multicolor light-emitting lamp by using a blue LED having a structure capable of avoiding cumbersome bonding. In particular, the present invention provides a technique for fabricating a multicolor light-emitting lamp by using a hetero-junction type GaP-base LED capable of emitting high intensity green light in combination. Also, for example, in fabricating a multicolor light-emitting lamp from the blue LED and the yellow LED, the present invention provides a technique for fabricating a multicolor light-emitting lamp from a blue LED requiring no cumbersome bonding and a hetero-junction type GaAs1-ZPZ-base yellow LED of emitting light having high light emission intensity.

    摘要翻译： 本发明提供一种通过使用具有能够避免麻烦的结合的结构的蓝色LED来制造多色发光灯的技术。 特别地，本发明提供了一种通过组合使用能够发射高强度绿光的异质结型GaP基LED来制造多色发光灯的技术。 此外，例如，在从蓝色LED和黄色LED制造多色发光灯的同时，本发明提供了一种从不需要繁琐的接合的蓝色LED制造多色发光灯和异质结型的技术 具有高发光强度的发光的GaAs1-ZPZ基黄色LED。