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公开(公告)号：US20080003820A1
公开(公告)日：2008-01-03
申请号：US11477940
申请日：2006-06-30
申请人： Tai-Chun Huang , Chih-Hsiang Yao , Chin-Chiu Hsia
发明人： Tai-Chun Huang , Chih-Hsiang Yao , Chin-Chiu Hsia
IPC分类号： H01L21/44
CPC分类号： H01L24/05 , H01L24/03 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/48463 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01082 , H01L2924/14 , H01L2224/05552 , H01L2224/45099
摘要： A semiconductor device, comprising: a substrate with a dielectric layer thereon; a stack of interconnection structures in the dielectric layer, each interconnection structure comprising a conductive layer and a layer of plugs connecting the conductive layer, at least a layer of plugs comprising a crack stopper; and a bonding pad structure with a predetermined bump area thereon, overlying the stack of interconnection structures; wherein the crack stopper is formed along an edge of a projection area corresponding to the predetermined bump area.
摘要翻译： 一种半导体器件，包括：其上具有介电层的衬底; 每个互连结构包括导电层和连接导电层的插塞层，至少一个包含裂纹塞的塞子层; 以及在其上覆盖有互连结构的堆叠的具有预定凸块面积的焊盘结构; 其中所述裂纹阻挡件沿着与所述预定凸起区域对应的投影区域的边缘形成。
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公开(公告)号：US20060246686A1
公开(公告)日：2006-11-02
申请号：US10908142
申请日：2005-04-28
IPC分类号： H01L21/30 , H01L21/4763 , H01L21/46
CPC分类号： H01L24/48 , H01L21/76804 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/48463 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/05042 , H01L2224/45099
摘要： Described are methods and structures for mitigating the effects of mechanical stresses placed on the layers of semiconductor devices, and specifically disclosed are methods and structures for mitigating the diminished chemical bonds between etch-stop layers and other semiconductor device layers. The disclosed methods and structures use different structures and/or processes for some of the etch-stop layers in a device.
摘要翻译： 描述了用于减轻放置在半导体器件层上的机械应力的影响的方法和结构，并且具体公开了用于减轻蚀刻停止层和其它半导体器件层之间减少的化学键的方法和结构。 所公开的方法和结构对于装置中的一些蚀刻停止层使用不同的结构和/或工艺。
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公开(公告)号：US20070205508A1
公开(公告)日：2007-09-06
申请号：US11409297
申请日：2006-04-21
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L24/45 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05095 , H01L2224/05552 , H01L2224/05558 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48666 , H01L2224/48681 , H01L2224/48684 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48766 , H01L2224/48784 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2924/00 , H01L2224/48744 , H01L2224/48781 , H01L2924/00012
摘要： A bond pad structure of an integrated circuit is provided. The bond pad structure includes a conductive bond pad, a first dielectric layer underlying the bond pad, and an Mtop plate located in the first dielectric layer and underlying the bond pad. The Mtop plate is a solid conductive plate and is electrically coupled to the bond pad. The bond pad structure further includes a first passivation layer over the first dielectric layer wherein the first passivation layer has at least a portion under a middle portion of the bond pad. At least part of an active circuit is located under the bond pad.
摘要翻译： 提供集成电路的接合焊盘结构。 接合焊盘结构包括导电接合焊盘，位于接合焊盘下方的第一介电层和位于第一介电层中并位于接合焊盘下方的M顶板。 M＆gt;顶板是固体导电板，并且电耦合到接合焊盘。 所述接合焊盘结构还包括在所述第一电介质层上的第一钝化层，其中所述第一钝化层具有在所述接合焊盘的中间部分下方的至少一部分。 有源电路的至少一部分位于接合焊盘下方。
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公开(公告)号：US07253531B1
公开(公告)日：2007-08-07
申请号：US11432373
申请日：2006-05-12
申请人： Tai-Chun Huang , Chih-Hsiang Yao , Kuan-Shou Chi , Ming-Ta Lei , Chin-Chiu Hsia
发明人： Tai-Chun Huang , Chih-Hsiang Yao , Kuan-Shou Chi , Ming-Ta Lei , Chin-Chiu Hsia
CPC分类号： H01L24/10 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05093 , H01L2224/05554 , H01L2224/05624 , H01L2224/13 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/05042 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a bonding pad structure. At least one lower circuit layer is disposed overlying the substrate, wherein the lower circuit layer is a layout of circuit under pad. A top circuit layer is disposed overlying the lower circuit layer, wherein the top circuit layer comprises a top interconnect dielectric layer and a top interconnect pattern in the top interconnect dielectric layer. A top connecting layer is disposed overlying the top circuit layer, electrically connecting the top interconnect pattern. A top pad layer is disposed overlying the top connecting layer. A bonding ball is disposed overlying the top pad layer, wherein sides of the top interconnect pattern do not overlap a region extending inwardly and outwardly from a boundary of the bonding ball within distance of about 2.5μm.
摘要翻译： 本发明提供一种焊盘结构。 至少一个下电路层设置在衬底上，其中下电路层是衬底下电路的布局。 顶层电路层设置在下电路层的上方，其中顶层电路层包括顶部互连电介质层和顶部互连电介质层中的顶部互连图案。 顶部连接层设置在顶部电路层上方，电连接顶部互连图案。 顶部衬垫层设置在顶部连接层上。 接合球设置在顶部焊盘层的上方，其中顶部互连图案的侧面不与距接合球的边界向内和向外延伸的区域重叠约2.5μm。
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公开(公告)号：US07151052B2
公开(公告)日：2006-12-19
申请号：US10908142
申请日：2005-04-28
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L24/48 , H01L21/76804 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/48463 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/05042 , H01L2224/45099
摘要： Described are methods and structures for mitigating the effects of mechanical stresses placed on the layers of semiconductor devices, and specifically disclosed are methods and structures for mitigating the diminished chemical bonds between etch-stop layers and other semiconductor device layers. The disclosed methods and structures use different structures and/or processes for some of the etch-stop layers in a device.
摘要翻译： 描述了用于减轻放置在半导体器件层上的机械应力的影响的方法和结构，并且具体公开了用于减轻蚀刻停止层和其它半导体器件层之间减少的化学键的方法和结构。 所公开的方法和结构对于装置中的一些蚀刻停止层使用不同的结构和/或工艺。
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公开(公告)号：US07470994B2
公开(公告)日：2008-12-30
申请号：US11477940
申请日：2006-06-30
申请人： Tai-Chun Huang , Chih-Hsiang Yao , Chin-Chiu Hsia
发明人： Tai-Chun Huang , Chih-Hsiang Yao , Chin-Chiu Hsia
CPC分类号： H01L24/05 , H01L24/03 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/48463 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01082 , H01L2924/14 , H01L2224/05552 , H01L2224/45099
摘要： A semiconductor device includes a substrate with a dielectric layer thereon, a stack of interconnection structures in the dielectric layer, each interconnection structure including a conductive layer and a layer of plugs connecting the conductive layer, at least a layer of plugs including a crack stopper, and a bonding pad structure with a predetermined bump area thereon, overlying the stack of interconnection structures, wherein the crack stopper is formed along an edge of a projection area corresponding to the predetermined bump area.
摘要翻译： 半导体器件包括其上具有介电层的衬底，电介质层中的互连结构的堆叠，每个互连结构包括导电层和连接导电层的插塞层，至少一个包括裂纹塞的塞子， 以及在其上覆盖有互连结构的叠层的具有预定凸起区域的焊盘结构，其中所述裂纹阻挡件沿着与所述预定凹凸区域对应的投影区域的边缘形成。
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公开(公告)号：US20060055007A1
公开(公告)日：2006-03-16
申请号：US10940504
申请日：2004-09-13
申请人： Chih-Hsiang Yao , Tai-Chun Huang , Kuan-Shou Chi , Chih-Cherng Jeng , Ming-Shuoh Liang , Wen-Kai Wan , Chin-Chiu Hsia
发明人： Chih-Hsiang Yao , Tai-Chun Huang , Kuan-Shou Chi , Chih-Cherng Jeng , Ming-Shuoh Liang , Wen-Kai Wan , Chin-Chiu Hsia
IPC分类号： H01L23/552 , H01L23/12
CPC分类号： H01L21/78 , B28D5/0011 , H01L21/76224 , H01L23/585 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A seal ring structure is disclosed for protecting a core circuit region of an integrated circuit chip. The seal ring structure includes a metallization layer, having a bridge sublevel and a plug sublevel. An upper-level bridge is formed on the bridge sublevel at a predetermined location between a peripheral edge of the integrated circuit chip and the core circuit region. A lower-level bridge is formed on the plug sublevel in substantial alignment with the upper-level bridge, wherein the lower-level bridge has a width substantially the same as that of the upper-level bridge.
摘要翻译： 公开了用于保护集成电路芯片的核心电路区域的密封环结构。 密封圈结构包括具有桥接子层和插塞子层的金属化层。 在集成电路芯片的外围边缘和核心电路区域之间的预定位置处，在桥接子层上形成上级桥。 在与上层桥接器基本对准的插头子级上形成有较低级别的桥，其中下级桥具有与上级桥基本相同的宽度。
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公开(公告)号：US07777338B2
公开(公告)日：2010-08-17
申请号：US10940504
申请日：2004-09-13
申请人： Chih-Hsiang Yao , Tai-Chun Huang , Kuan-Shou Chi , Chih-Cherng Jeng , Ming-Shuoh Liang , Wen-Kai Wan , Chin-Chiu Hsia
发明人： Chih-Hsiang Yao , Tai-Chun Huang , Kuan-Shou Chi , Chih-Cherng Jeng , Ming-Shuoh Liang , Wen-Kai Wan , Chin-Chiu Hsia
IPC分类号： H01L23/48
CPC分类号： H01L21/78 , B28D5/0011 , H01L21/76224 , H01L23/585 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A seal ring structure is disclosed for protecting a core circuit region of an integrated circuit chip. The seal ring structure includes a metallization layer, having a bridge sublevel and a plug sublevel. An upper-level bridge is formed on the bridge sublevel at a predetermined location between a peripheral edge of the integrated circuit chip and the core circuit region. A lower-level bridge is formed on the plug sublevel in substantial alignment with the upper-level bridge, wherein the lower-level bridge has a width substantially the same as that of the upper-level bridge.
摘要翻译： 公开了用于保护集成电路芯片的核心电路区域的密封环结构。 密封圈结构包括具有桥接子层和插塞子层的金属化层。 在集成电路芯片的外围边缘和核心电路区域之间的预定位置处，在桥接子层上形成上层电桥。 在与上层桥接器基本对准的插头子级上形成有较低级别的桥，其中下级桥具有与上级桥基本相同的宽度。
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公开(公告)号：US07592710B2
公开(公告)日：2009-09-22
申请号：US11409297
申请日：2006-04-21
CPC分类号： H01L24/05 , H01L24/45 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05095 , H01L2224/05552 , H01L2224/05558 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48666 , H01L2224/48681 , H01L2224/48684 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48766 , H01L2224/48784 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2924/00 , H01L2224/48744 , H01L2224/48781 , H01L2924/00012
摘要： A bond pad structure of an integrated circuit is provided. The bond pad structure includes a conductive bond pad, a first dielectric layer underlying the bond pad, and an Mtop plate located in the first dielectric layer and underlying the bond pad. The Mtop plate is a solid conductive plate and is electrically coupled to the bond pad. The bond pad structure further includes a first passivation layer over the first dielectric layer wherein the first passivation layer has at least a portion under a middle portion of the bond pad. At least part of an active circuit is located under the bond pad.
摘要翻译： 提供集成电路的接合焊盘结构。 接合焊盘结构包括导电接合焊盘，接合焊盘下面的第一介电层和位于第一介电层中并位于接合焊盘下方的Mtop板。 Mtop板是固体导电板，并且电耦合到接合焊盘。 所述接合焊盘结构还包括在所述第一电介质层上的第一钝化层，其中所述第一钝化层具有在所述接合焊盘的中间部分下方的至少一部分。 有源电路的至少一部分位于接合焊盘下方。
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公开(公告)号：US20060055002A1
公开(公告)日：2006-03-16
申请号：US11196184
申请日：2005-08-03
申请人： Chih-Hsiang Yao , Wen-Kai Wan , Kuan-Shou Chi , Chih-Cherng Jeng , Ming-Shuo Liang , Tai-Chun Huang , Chin-Chiu Hsia , Mong-Song Liang
发明人： Chih-Hsiang Yao , Wen-Kai Wan , Kuan-Shou Chi , Chih-Cherng Jeng , Ming-Shuo Liang , Tai-Chun Huang , Chin-Chiu Hsia , Mong-Song Liang
IPC分类号： H01L23/544 , H01L21/30
CPC分类号： H01L21/78 , B28D5/0011 , H01L21/76224 , H01L23/585 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A wafer device is disclosed for improving reliability of circuits fabricated in an active area on a silicon substrate. A seal ring is fabricated around the active area, and a shallow trench isolation is also formed between the seal ring and a scribe line by etching into a portion of the silicon substrate, wherein the seal ring and the shallow trench isolation prevent die saw induced crack from propagating to the active area when the active area is cut along the scribe line.
摘要翻译： 公开了一种用于改善在硅衬底上的有源区域中制造的电路的可靠性的晶片装置。 在有源区域周围制造密封圈，并且通过蚀刻到硅衬底的一部分中，在密封环和划线之间也形成浅沟槽隔离，其中密封环和浅沟槽隔离防止模锯引起裂纹 当沿着划线切割活动区域时，从传播到有源区域。
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