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    Cluster tool techniques with improved efficiency
    2.
    发明授权
    Cluster tool techniques with improved efficiency 有权

    公开(公告)号：US10510566B2

    公开(公告)日：2019-12-17

    申请号：US14798938

    申请日：2015-07-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Su-Horng Lin ,  Tsung-Hsun Yu ,  Victor Y. Lu

    IPC: H01L21/67 ,  C30B25/02

    Abstract: Some embodiments relate to a cluster tool for semiconductor manufacturing. The cluster tool comprises a first transfer chamber having a first transfer robot. The cluster tool further comprises a designated storage chamber and a transfer load lock attached to the first transfer chamber. The cluster tool further comprises a second transfer chamber connected to the first transfer chamber through a pair of via connector chambers, the second transfer chamber having a second transfer robot. The cluster tool further comprises at least three epitaxial deposition chamber attached to the second transfer chamber. The cluster tool further comprises a control unit configured to control the second transfer robot to transfer wafers between the designated storage chamber and the transfer load lock.

    BOTTOM-UP PEALD PROCESS
    5.
    发明申请
    BOTTOM-UP PEALD PROCESS 审中-公开
    底层PEALD工艺

    公开(公告)号：US20160013043A1

    公开(公告)日：2016-01-14

    申请号：US14861441

    申请日：2015-09-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lin-Jung Wu ,  Su-Horng Lin ,  Chi-Ming Yang

    IPC: H01L21/02 ,  H01L21/687 ,  H01L21/285

    CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/45542 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32706 ,  H01J37/32926 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/687

    Abstract: The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The process introduces a precursor gas into a processing chamber comprising a semiconductor workpiece. The first gas is ionized to from a plurality of ionized precursor molecules. A bias voltage is subsequently applied to the workpiece. The bias voltage attracts the ionized precursor molecules to the workpiece, so as to provide anisotropic coverage of the workpiece with the precursor gas. A reactant gas is introduced into the processing chamber. A plasma is subsequently ignited from the reactant gas, causing the reactant gas to react with the ionized precursor molecules that have been deposited onto the substrate to form a deposited layer on the workpiece.

    Abstract translation: 本公开涉及一种用于执行等离子体增强ALD（PEALD）过程的方法和装置，其提供改进的步骤覆盖。 该方法将前体气体引入到包括半导体工件的处理室中。 将第一气体从多个离子化的前体分子离子化。 随后将偏置电压施加到工件。 偏置电压将离子化的前体分子吸引到工件，以便为前体气体提供工件的各向异性覆盖。 将反应气体引入处理室。 等离子体随后从反应气体中点燃，使反应气体与沉积在基底上的离子化前体分子反应，在工件上形成沉积层。

    Cluster tool techniques with improved efficiency
    7.
    发明授权
    Cluster tool techniques with improved efficiency 有权

    公开(公告)号：US10755953B2

    公开(公告)日：2020-08-25

    申请号：US16656804

    申请日：2019-10-18

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Su-Horng Lin ,  Tsung-Hsun Yu ,  Victor Y. Lu

    IPC: H01L21/67 ,  H01L21/677 ,  C30B25/02

    Abstract: The present disclosure relates to some embodiments of a method for improving processing efficiency of a cluster tool. The method comprises transferring a first lot of wafers from a transfer load lock to a designated storage load lock and transferring a second lot of wafers from the transfer load lock to the designated storage load lock while the first lot of wafers is in the transfer load lock or the designated storage load lock. The designated storage load lock has the same structure as the transfer load lock and respectively has an inner load lock portal at an interface with the first transfer chamber and an outer load lock portal on a sidewall of a front end interface. The inner load lock portal of the designated storage load lock is retained opened during processing. The outer load lock portal of the designated storage load lock is retained closed during processing.

    Semiconductor manufacturing system and control method
    8.
    发明授权
    Semiconductor manufacturing system and control method 有权

    公开(公告)号：US11443959B2

    公开(公告)日：2022-09-13

    申请号：US17027494

    申请日：2020-09-21

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Su-Horng Lin

    IPC: H01L21/67 ,  H05B1/02

    Abstract: A system includes a chamber, an inlet valve, a control device, and a recycle pipe. The chamber is configured to perform a semiconductor process and including an output port. The inlet valve is coupled to the chamber and a supply pipe. The controller is coupled to the inlet valve and the chamber. The recycle pipe arranged outside the chamber and coupled to the chamber. The recycle pipe is independent from the supply pipe. The controller is configured to determine whether the chamber is idle, and is configured to control the inlet valve based on the determination of whether the chamber is idle. When the controller closes the output port of the chamber and opens the inlet valve, water from the supply pipe flows into a wall of the chamber through the inlet valve first and then flows into the recycle pipe.

    Bottom-up PEALD proces
    9.
    发明授权
    Bottom-up PEALD proces 有权

    公开(公告)号：US10121653B2

    公开(公告)日：2018-11-06

    申请号：US14861441

    申请日：2015-09-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lin-Jung Wu ,  Su-Horng Lin ,  Chi-Ming Yang

    IPC: H01L21/00 ,  H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/455 ,  H01L21/285 ,  H01L21/687

    Abstract: The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The process introduces a precursor gas into a processing chamber comprising a semiconductor workpiece. The first gas is ionized to form a plurality of ionized precursor molecules. A bias voltage is subsequently applied to the workpiece. The bias voltage attracts the ionized precursor molecules to the workpiece, so as to provide anisotropic coverage of the workpiece with the precursor gas. A reactant gas is introduced into the processing chamber. A plasma is subsequently ignited from the reactant gas, causing the reactant gas to react with the ionized precursor molecules that have been deposited onto the substrate to form a deposited layer on the workpiece.

    Bottom-up PEALD process
    10.
    发明授权
    Bottom-up PEALD process 有权
    自下而上的PEALD过程

    公开(公告)号：US09184045B2

    公开(公告)日：2015-11-10

    申请号：US13762547

    申请日：2013-02-08

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lin-Jung Wu ,  Su-Horng Lin ,  Chi-Ming Yang

    IPC: H01L21/00 ,  H01L21/02 ,  H01J37/32

    CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/45542 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32706 ,  H01J37/32926 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/687

    Abstract: The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The process introduces a precursor gas into a processing chamber comprising a semiconductor workpiece. The first gas is ionized to from a plurality of ionized precursor molecules. A bias voltage is subsequently applied to the workpiece. The bias voltage attracts the ionized precursor molecules to the workpiece, so as to provide anisotropic coverage of the workpiece with the precursor gas. A reactant gas is introduced into the processing chamber. A plasma is subsequently ignited from the reactant gas, causing the reactant gas to react with the ionized precursor molecules that have been deposited onto the substrate to form a deposited layer on the workpiece.

    Abstract translation: 本公开涉及一种用于执行等离子体增强ALD（PEALD）过程的方法和装置，其提供改进的步骤覆盖。 该方法将前体气体引入到包括半导体工件的处理室中。 将第一气体从多个离子化的前体分子离子化。 随后将偏置电压施加到工件。 偏置电压将离子化的前体分子吸引到工件，以便为前体气体提供工件的各向异性覆盖。 将反应气体引入处理室。 等离子体随后从反应气体中点燃，使反应气体与沉积在基底上的离子化前体分子反应，在工件上形成沉积层。

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