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    Package with UBM and methods of forming
    3.
    发明授权
    Package with UBM and methods of forming 有权

    公开(公告)号：US10700026B2

    公开(公告)日：2020-06-30

    申请号：US16207832

    申请日：2018-12-03

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Hsien-Wei Chen ,  Li-Hsien Huang

    IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L21/56

    摘要： Package structures and methods of forming package structures are discussed. A package structure, in accordance with some embodiments, includes an integrated circuit die, an encapsulant at least laterally encapsulating the integrated circuit die, a redistribution structure on the integrated circuit die and the encapsulant, a connector support metallization coupled to the redistribution structure, a dummy pattern, a second dielectric layer, and an external connector on the connector support metallization. The redistribution structure comprises a first dielectric layer having a first surface disposed distally from the encapsulant and the integrated circuit die. The dummy pattern is on the first surface of the first dielectric layer and around the connector support metallization. The second dielectric layer is on the first surface of the first dielectric layer and on at least a portion of the dummy pattern. The second dielectric layer does not contact the connector support metallization.

    Stacked Semiconductor Devices and Methods of Forming Same
    6.
    发明申请
    Stacked Semiconductor Devices and Methods of Forming Same 审中-公开

    公开(公告)号：US20190148171A1

    公开(公告)日：2019-05-16

    申请号：US16227697

    申请日：2018-12-20

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Hsien-Wei Chen ,  Der-Chyang Yeh ,  Li-Hsien Huang

    IPC分类号： H01L21/56 ,  H01L23/00 ,  H01L23/31

    摘要： Stacked semiconductor devices and methods of forming the same are provided. Contact pads are formed on a die. A passivation layer is blanket deposited over the contact pads. The passivation layer is subsequently patterned to form first openings, the first openings exposing the contact pads. A buffer layer is blanket deposited over the passivation layer and the contact pads. The buffer layer is subsequently patterned to form second openings, the second opening exposing a first set of the contact pads. First conductive pillars are formed in the second openings. Conductive lines are formed over the buffer layer simultaneously with the first conductive pillars, ends of the conductive lines terminating with the first conductive pillars. An external connector structure is formed over the first conductive pillars and the conductive lines, the first conductive pillars electrically coupling the contact pads to the external connector structure.

    Stacked semiconductor devices and methods of forming same
    7.
    发明授权
    Stacked semiconductor devices and methods of forming same 有权

    公开(公告)号：US10163661B2

    公开(公告)日：2018-12-25

    申请号：US14788258

    申请日：2015-06-30

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Hsien-Wei Chen ,  Der-Chyang Yeh ,  Li-Hsien Huang

    IPC分类号： H01L21/768 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

    摘要： Stacked semiconductor devices and methods of forming the same are provided. Contact pads are formed on a die. A passivation layer is blanket deposited over the contact pads. The passivation layer is subsequently patterned to form first openings, the first openings exposing the contact pads. A buffer layer is blanket deposited over the passivation layer and the contact pads. The buffer layer is subsequently patterned to form second openings, the second opening exposing a first set of the contact pads. First conductive pillars are formed in the second openings. Conductive lines are formed over the buffer layer simultaneously with the first conductive pillars, ends of the conductive lines terminating with the first conductive pillars. An external connector structure is formed over the first conductive pillars and the conductive lines, the first conductive pillars electrically coupling the contact pads to the external connector structure.