公开(公告)号：US20240030168A1

公开(公告)日：2024-01-25

申请号：US17814525

申请日：2022-07-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Yu Chen ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yinlung Lu ,  Jun He

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L23/48

CPC分类号： H01L24/08 ,  H01L24/94 ,  H01L24/80 ,  H01L25/0657 ,  H01L23/481 ,  H01L2225/06524 ,  H01L2225/06593 ,  H01L2924/35121 ,  H01L2924/30205 ,  H01L2224/08145 ,  H01L2224/80908 ,  H01L2224/80896 ,  H01L2224/80895 ,  H01L2224/8011

摘要： A package structure is provided. The package structure includes a bottom die and a top die. The bottom die includes: a first active region surrounded by a first seal ring region; a first seal ring region including a bottom seal ring; and a first bonding layer disposed on a front side of the bottom die. The top die includes: a second active region surrounded by a second seal ring region; a second seal ring region including a top seal ring; and a second bonding layer disposed on a front side of the top die. The bottom die and the top die are bonded through hybrid bonding between the first bonding layer and the second bonding layer at an interface therebetween such that the bottom seal ring and the top seal ring are vertically aligned and are operable to form a continuous seal ring.

公开(公告)号：US11961796B2

公开(公告)日：2024-04-16

申请号：US17461828

申请日：2021-08-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yueh-Ting Lin ,  Hua-Wei Tseng ,  Ming Shih Yeh ,  Der-Chyang Yeh

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L25/11

CPC分类号： H01L23/49838 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/73 ,  H01L25/117 ,  H01L2224/16146 ,  H01L2224/73204 ,  H01L2225/1076

摘要： A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.

公开(公告)号：US20230154881A1

公开(公告)日：2023-05-18

申请号：US18155705

申请日：2023-01-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hua-Wei Tseng ,  Yueh-Ting Lin ,  Shao-Yun Chen ,  Li-Hsien Huang ,  An-Jhih Su ,  Ming-Shih Yeh ,  Der-Chyang Yeh

IPC分类号： H01L23/00

CPC分类号： H01L24/24 ,  H01L24/19 ,  H01L24/82 ,  H01L28/00 ,  H01L25/0657

摘要： A package structure including IPD and method of forming the same are provided. The package structure includes a die, an encapsulant laterally encapsulating the die, a first RDL structure disposed on the encapsulant and the die, an IPD disposed on the first RDL structure and an underfill layer. The IPD includes a substrate, a first connector on a first side of the substrate and electrically connected to the first RDL structure, a guard structure on a second side of the substrate opposite to the first side and laterally surrounding a connector region, and a second connector disposed within the connector region and electrically connected to a conductive via embedded in the substrate. The underfill layer is disposed to at least fill a space between the first side of the IPD and the first RDL structure. The underfill layer is separated from the connector region by the guard structure.

公开(公告)号：US09406629B2

公开(公告)日：2016-08-02

申请号：US14515060

申请日：2014-10-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Hua-Wei Tseng ,  Shang-Yun Tu ,  Hsu-Hsien Chen ,  Hao-Juin Liu ,  Chen-Shien Chen ,  Ming Hung Tseng ,  Chita Chuang

IPC分类号： H01L23/31 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/53214 ,  H01L23/53233 ,  H01L23/53257 ,  H01L23/5329 ,  H01L23/562 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0231 ,  H01L2224/02351 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/03831 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05085 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/1132 ,  H01L2224/11424 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11472 ,  H01L2224/11903 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83862 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/381 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01051 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01013 ,  H01L2924/00

摘要： A semiconductor package structure includes a first semiconductor substrate including a conductive pad; and a conductive pillar on the conductive pad and disposed between the first semiconductor substrate and a second semiconductor substrate. The conductive pad is coupled with a circuitry of the first semiconductor substrate. The conductive pillar extends along a longitudinal axis and toward the second semiconductor substrate. The conductive pillar includes a sidewall with a rough surface notching toward the longitudinal axis.

摘要翻译： 半导体封装结构包括：包括导电焊盘的第一半导体衬底; 以及在导电焊盘上的导电柱，并且设置在第一半导体衬底和第二半导体衬底之间。 导电焊盘与第一半导体衬底的电路耦合。 导电柱沿着纵向轴线并朝向第二半导体衬底延伸。 导电柱包括具有朝向纵向轴线凹陷的粗糙表面的侧壁。

公开(公告)号：US20240355721A1

公开(公告)日：2024-10-24

申请号：US18761200

申请日：2024-07-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Li-Hsien Huang ,  An-Jhih Su ,  Der-Chyang Yeh ,  Hua-Wei Tseng ,  Chiang Lin ,  Ming-Shih Yeh

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L25/10

CPC分类号： H01L23/49822 ,  H01L21/4857 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/105 ,  H01L2225/1041 ,  H01L2225/1058

摘要： A semiconductor package includes a semiconductor die including an active surface and an electrical terminal on the active surface, and a redistribution circuitry disposed on the active surface of the semiconductor die and connected to the electrical terminal. A top surface of the redistribution circuitry includes a planar portion and a concave portion connected to the planar portion, the concave portion is directly over the electrical terminal, and a minimum distance measured from a lowest point of the concave portion to a virtual plane where the planar portion is located is equal to or smaller than 0.5 μm.

公开(公告)号：US20240128143A1

公开(公告)日：2024-04-18

申请号：US18162715

申请日：2023-02-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chia-Han Hsieh ,  Yu-Jin Hu ,  Hua-Wei Tseng ,  An-Jhih Su ,  Der-Chyang Yeh

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00

CPC分类号： H01L23/3192 ,  H01L21/561 ,  H01L21/78 ,  H01L23/562

摘要： Provided are a package structure and a method of forming the same. The method includes: forming an interconnect structure on a substrate; performing a laser grooving process to form a first opening in the interconnect structure and form a debris layer on a sidewall of the first opening in a same step; forming a protective layer to fill in the first opening and cover the debris layer and the interconnect structure; patterning the protective layer to form a second opening, wherein the second opening is spaced from the debris layer by the protective layer; performing a planarization process on the protective layer to expose a topmost contact pad of the interconnect structure; and performing a mechanical dicing process through the second opening to form a third opening in the substrate and cut the substrate into a plurality of semiconductor dies.

公开(公告)号：US20240055311A1

公开(公告)日：2024-02-15

申请号：US17887499

申请日：2022-08-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yueh-Ting Lin ,  Hua-Wei Tseng ,  An-Jhih Su ,  Ming-Shih Yeh ,  Der-Chyang Yeh

IPC分类号： H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L21/463

CPC分类号： H01L23/3157 ,  H01L23/49816 ,  H01L24/32 ,  H01L24/05 ,  H01L21/463 ,  H01L2924/15311 ,  H01L2224/32146 ,  H01L2224/02373

摘要： A semiconductor structure includes a package, an electrical device and an underfill material. The package includes a redistribution structure and at least one die, and the at least one die is disposed on a first side of the redistribution structure. The electrical device is disposed on a second side of the redistribution structure, the electrical device has a top surface and a bottom surface opposite to each other, and the top surface faces the redistribution structure. The underfill material is disposed between the top surface and the redistribution structure and extending toward the bottom surface, the underfill material has an end surface corresponding to the bottom surface, and the end surface is a flat surface. In addition, a manufacturing method of the semiconductor structure is also provided.

公开(公告)号：US20220278067A1

公开(公告)日：2022-09-01

申请号：US17185970

申请日：2021-02-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hua-Wei Tseng ,  Yueh-Ting Lin ,  Shao-Yun Chen ,  Li-Hsien Huang ,  An-Jhih Su ,  Ming-Shih Yeh ,  Der-Chyang Yeh

IPC分类号： H01L23/00 ,  H01L49/02

摘要： A package structure including IPD and method of forming the same are provided. The package structure includes a die, an encapsulant laterally encapsulating the die, a first RDL structure disposed on the encapsulant and the die, an IPD disposed on the first RDL structure and an underfill layer. The IPD includes a substrate, a first connector on a first side of the substrate and electrically connected to the first RDL structure, a guard structure on a second side of the substrate opposite to the first side and laterally surrounding a connector region, and a second connector disposed within the connector region and electrically connected to a conductive via embedded in the substrate. The underfill layer is disposed to at least fill a space between the first side of the IPD and the first RDL structure. The underfill layer is separated from the connector region by the guard structure.

公开(公告)号：US11088094B2

公开(公告)日：2021-08-10

申请号：US16427516

申请日：2019-05-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC分类号： H01L21/82 ,  H01L23/58 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L21/56

摘要： A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

公开(公告)号：US20230386989A1

公开(公告)日：2023-11-30

申请号：US18232523

申请日：2023-08-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yueh-Ting Lin ,  Hua-Wei Tseng ,  Ming Shih Yeh ,  Der-Chyang Yeh

IPC分类号： H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L25/11 ,  H01L23/538

CPC分类号： H01L23/49838 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49816 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/73 ,  H01L25/117 ,  H01L23/5389 ,  H01L2225/1076 ,  H01L2224/16146 ,  H01L2224/73204

摘要： A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.