公开(公告)号：US20100238142A1

公开(公告)日：2010-09-23

申请号：US12294638

申请日：2007-03-28

申请人： Takashi Chuman ,  Satoru Ohta ,  Chihiro Harada

发明人： Takashi Chuman ,  Satoru Ohta ,  Chihiro Harada

IPC分类号： G09G3/30 ,  G09G5/00 ,  H01L51/56

CPC分类号： H01L27/3246 ,  H01L27/283 ,  H01L27/3274 ,  H01L51/56

摘要： An active matrix drive organic EL display panel comprising an organic TFT with a configuration that prevents the occurrence of current leak, and a manufacturing method thereof are proposed. The organic EL display panel comprises: a substrate; an organic EL element comprising in order from the substrate, a first display electrode, an organic functional layer and a second display electrode; and an organic TFT for driving and controlling the organic EL element comprising in order from the substrate a gate electrode, a gate insulation film, source/drain electrodes, and an organic semiconductor layer. The organic EL display panel further comprises: a first bank having a first window section for demarcating a light emitting region on which the organic functional layer is provided on the first display electrode and a second window section demarcating a transistor region on which the organic semiconductor layer is provided between the source/drain electrodes; and a second bank located in the perimeter of the second window section and protruding in a direction that intersects with the main surface of the substrate.

摘要翻译： 提出了一种有源矩阵驱动的有机EL显示面板及其制造方法，该有源EL显示面板包括具有防止发生电流泄漏的结构的有机TFT。 有机EL显示面板包括：基板; 有机EL元件，从所述基板顺序包括第一显示电极，有机功能层和第二显示电极; 以及用于驱动和控制有机EL元件的有机TFT，其包括从栅极电极，栅极绝缘膜，源极/漏极电极和有机半导体层的基板的顺序。 有机EL显示面板还包括：具有用于界定在第一显示电极上设置有机功能层的发光区域的第一窗口部分的第一组和划分其上有机半导体层的晶体管区域的第二窗口部分 设置在源极/漏极之间; 以及位于所述第二窗口部分的周边中并且沿与所述基板的主表面相交的方向突出的第二组。

公开(公告)号：US20090072734A1

公开(公告)日：2009-03-19

申请号：US11910379

申请日：2006-03-24

申请人： Chihiro Harada ,  Takashi Chuman ,  Satoru Ohta ,  Atsushi Yoshizawa

发明人： Chihiro Harada ,  Takashi Chuman ,  Satoru Ohta ,  Atsushi Yoshizawa

IPC分类号： H01J1/70

CPC分类号： H01L27/3246 ,  H01L27/3248 ,  H01L27/3272 ,  H01L27/3274 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0545

摘要： It is an object to provide an organic EL display device having the organic transistor of less performance deterioration, a method of manufacturing the organic EL display device, an organic transistor, and a method of manufacturing the organic transistor.The organic EL display device P1 covers the organic transistor 50 and has a protection film 20 protecting the organic transistor. Between the protection film 20 and the surface of the organic transistor 50, a conductive layer (an negative electrode of the organic EL element 100) 18 having conductivity is formed and an insulation film 72 insulating the surface of the organic transistor 50 and the conductive layer 18 is formed on the side of the surface of the organic transistor 50 but the conductive layer 18.

摘要翻译： 本发明的目的是提供一种具有较差性能劣化的有机晶体管的有机EL显示装置，有机EL显示装置的制造方法，有机晶体管及其制造方法。 有机EL显示装置P1覆盖有机晶体管50，并具有保护有机晶体管的保护膜20。 在保护膜20与有机晶体管50的表面之间，形成具有导电性的导电层（有机EL元件100的负极）18，绝缘膜72将有机晶体管50的表面和导电层 18形成在有机晶体管50的表面的一侧上，但是形成在导电层18上。

公开(公告)号：US08049404B2

公开(公告)日：2011-11-01

申请号：US12294638

申请日：2007-03-28

申请人： Takashi Chuman ,  Satoru Ohta ,  Chihiro Harada

发明人： Takashi Chuman ,  Satoru Ohta ,  Chihiro Harada

IPC分类号： H01J1/62 ,  H01J63/04 ,  G09G3/32

CPC分类号： H01L27/3246 ,  H01L27/283 ,  H01L27/3274 ,  H01L51/56

摘要： An active matrix drive organic EL display panel comprising an organic TFT with a configuration that prevents the occurrence of current leak, and a manufacturing method thereof are proposed. The organic EL display panel comprises: a substrate; an organic EL element comprising in order from the substrate, a first display electrode, an organic functional layer and a second display electrode; and an organic TFT for driving and controlling the organic EL element comprising in order from the substrate a gate electrode, a gate insulation film, source/drain electrodes, and an organic semiconductor layer. The organic EL display panel further comprises: a first bank having a first window section for demarcating a light emitting region on which the organic functional layer is provided on the first display electrode and a second window section demarcating a transistor region on which the organic semiconductor layer is provided between the source/drain electrodes; and a second bank located in the perimeter of the second window section and protruding in a direction that intersects with the main surface of the substrate.

摘要翻译： 提出了一种有源矩阵驱动的有机EL显示面板及其制造方法，该有源EL显示面板包括具有防止发生电流泄漏的结构的有机TFT。 有机EL显示面板包括：基板; 有机EL元件，从所述基板顺序包括第一显示电极，有机功能层和第二显示电极; 以及用于驱动和控制有机EL元件的有机TFT，其包括从栅极电极，栅极绝缘膜，源极/漏极电极和有机半导体层的基板的顺序。 有机EL显示面板还包括：具有用于界定在第一显示电极上设置有机功能层的发光区域的第一窗口部分的第一组和划分其上有机半导体层的晶体管区域的第二窗口部分 设置在源极/漏极之间; 以及位于所述第二窗口部分的周边中并且沿与所述基板的主表面相交的方向突出的第二组。

公开(公告)号：US07968458B2

公开(公告)日：2011-06-28

申请号：US11666137

申请日：2005-10-21

申请人： Takashi Chuman ,  Satoru Ohta ,  Satoshi Miyaguchi

发明人： Takashi Chuman ,  Satoru Ohta ,  Satoshi Miyaguchi

IPC分类号： H01L21/44

CPC分类号： H01L21/02258 ,  H01L21/02183 ,  H01L21/31683 ,  H01L21/76888 ,  H01L27/3244 ,  H01L51/0525 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/56 ,  H05K1/0293 ,  H05K3/02 ,  H05K2203/0315 ,  H05K2203/1142 ,  H05K2203/175 ,  Y10T428/24355

摘要： A production process for making an electronic circuit substrate comprising: a patterning step of forming a respectively anodically oxidizable conductor pattern and distribution pattern connected to the conductor pattern on a substrate; and an anodic oxidation step of generating an oxide film from the conductor pattern and the distribution pattern by contacting an electrolyte solution with the conductor pattern and the distribution pattern and carrying out anodic oxidation while applying current thereto, the patterns serving as anodes, wherein the width or film thickness of the distribution pattern is at least partially set so that an insulator portion is formed in the anodic oxidation step in which an oxide film formed on one of the side walls of the distribution pattern is integrated with an oxide film formed on the other side wall.

摘要翻译： 一种用于制造电子电路基板的制造方法，包括：图案化步骤，在基板上形成连接到所述导体图案的分别的阳极氧化导体图案和分布图案; 以及阳极氧化步骤，通过使电解质溶液与导体图案和分布图案接触，并且在施加电流的同时进行阳极氧化，从而从导体图案和分布图案产生氧化膜，所述图案用作阳极，其中宽度 或分布图案的膜厚度至少部分地设定为使得在阳极氧化步骤中形成绝缘体部分，其中形成在分布图案的一个侧壁上的氧化膜与形成在另一个上的氧化物膜一体化 侧墙。

公开(公告)号：US20070194312A1

公开(公告)日：2007-08-23

申请号：US10594039

申请日：2005-03-14

申请人： Takashi Chuman ,  Satoru Ohta ,  Takahisa Tanabe

发明人： Takashi Chuman ,  Satoru Ohta ,  Takahisa Tanabe

IPC分类号： H01L29/04

CPC分类号： G02F1/13454 ,  G09G2300/0417 ,  H01L27/12 ,  H01L27/283 ,  H01L27/3244

摘要： There is provided a subpixel that is free from an increase in its overall size and can ensure a large size of its display portion, even when easily producible and inexpensive organic or amorphous Si thin film transistors are used. The subpixel includes one display portion and a plurality of thin film transistors for driving the display portion, wherein the plurality of thin film transistors are arranged such that their channels are in parallel to each another.

摘要翻译： 提供了一个没有增加其总体尺寸的子像素，并且即使使用易于生产和廉价的有机或非晶Si薄膜晶体管，也可以确保其显示部分的大尺寸。 子像素包括用于驱动显示部分的一个显示部分和多个薄膜晶体管，其中多个薄膜晶体管布置成使得它们的通道彼此平行。

公开(公告)号：US20080124522A1

公开(公告)日：2008-05-29

申请号：US11666137

申请日：2005-10-21

申请人： Takashi Chuman ,  Satoru Ohta ,  Satoshi Miyaguchi

发明人： Takashi Chuman ,  Satoru Ohta ,  Satoshi Miyaguchi

IPC分类号： B44C1/22 ,  B32B3/00

CPC分类号： H01L21/02258 ,  H01L21/02183 ,  H01L21/31683 ,  H01L21/76888 ,  H01L27/3244 ,  H01L51/0525 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/56 ,  H05K1/0293 ,  H05K3/02 ,  H05K2203/0315 ,  H05K2203/1142 ,  H05K2203/175 ,  Y10T428/24355

摘要： A production process for making an electronic circuit substrate comprising: a patterning step of forming a respectively anodically oxidizable conductor pattern and distribution pattern connected to the conductor pattern on a substrate; and an anodic oxidation step of generating an oxide film from the conductor pattern and the distribution pattern by contacting an electrolyte solution with the conductor pattern and the distribution pattern and carrying out anodic oxidation while applying current thereto, the patterns serving as anodes, wherein the width or film thickness of the distribution pattern is at least partially set so that an insulator portion is formed in the anodic oxidation step in which an oxide film formed on one of the side walls of the distribution pattern is integrated with an oxide film formed on the other side wall.

摘要翻译： 一种用于制造电子电路基板的制造方法，包括：图案化步骤，在基板上形成连接到所述导体图案的分别的阳极氧化导体图案和分布图案; 以及阳极氧化步骤，通过使电解质溶液与导体图案和分布图案接触，并且在施加电流的同时进行阳极氧化，从而从导体图案和分布图案产生氧化膜，所述图案用作阳极，其中宽度 或分布图案的膜厚度至少部分地设定为使得在阳极氧化步骤中形成绝缘体部分，其中形成在分布图案的一个侧壁上的氧化膜与形成在另一个上的氧化物膜一体化 侧墙。

公开(公告)号：US20100044890A1

公开(公告)日：2010-02-25

申请号：US12450229

申请日：2007-03-22

申请人： Hideo Ochi ,  Atsushi Yoshizawa ,  Hideo Satoh ,  Tashaki Chuman ,  Satoru Ohta ,  Chihiro Harada

发明人： Hideo Ochi ,  Atsushi Yoshizawa ,  Hideo Satoh ,  Tashaki Chuman ,  Satoru Ohta ,  Chihiro Harada

IPC分类号： H01L21/66 ,  G21K5/10 ,  H01L23/544

CPC分类号： H01L51/0097 ,  H01L21/681 ,  H01L27/1292 ,  H01L51/56 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

摘要： [Problems] To perform predetermined processing such as annealing and coating application of a semiconductor material with high accuracy on a number of semiconductor formation areas formed over a wide region on a surface of a substrate having elasticity such as a plastic substrate even when the substrate expands and contracts.[Solving Means] A semiconductor substrate manufacture apparatus includes: a tracking device (33) having a light-emitting portion (34) which applies light to a substrate surface during tracking, a light-receiving portion (35) which receives the light applied by the light-emitting portion (34) and reflected by the substrate surface, and a position detecting portion (36) which detects the positions of the semiconductor formation areas on the substrate based on the spectrum or intensity of the received light; and a semiconductor processing device for performing the predetermined processing on each of the semiconductor formation areas based on position information from the tracking device (33). For example, an annealing light application device (37) or an inkjet nozzle (41) is used as the semiconductor processing device.

摘要翻译： [问题]即使当基板膨胀时，也可以在诸如塑料基板的具有弹性的基板的表面上在宽范围上形成的多个半导体形成区域上高精度地退火和涂覆半导体材料的预定处理 和合同。 【解决方案】半导体衬底制造装置包括：跟踪装置（33），其具有在跟踪期间向衬底表面施加光的发光部（34）;受光部（35），其接收由 发光部分（34）并被基板表面反射;以及位置检测部分（36），其基于所接收的光的光谱或强度来检测基板上的半导体形成区域的位置; 以及半导体处理装置，用于基于来自跟踪装置（33）的位置信息对每个半导体形成区域执行预定处理。 例如，使用退火光施加装置（37）或喷墨喷嘴（41）作为半导体处理装置。

公开(公告)号：US06619087B2

公开(公告)日：2003-09-16

申请号：US10034576

申请日：2001-12-19

申请人： Shigeru Ogawa ,  Atsushi Ishii ,  Kenji Yamada ,  Satoru Ohta ,  Katsuhiko Koumoto

发明人： Shigeru Ogawa ,  Atsushi Ishii ,  Kenji Yamada ,  Satoru Ohta ,  Katsuhiko Koumoto

IPC分类号： B21B3758

CPC分类号： B21B37/68 ,  B21B37/16 ,  B21B38/105

摘要： In a rolling method applied to a multi-roll strip rolling mill composed of not less than four rolls, one of the zero point of the roll positioning devices and the deformation characteristic of the strip rolling mill or alternatively both the zero point of the roll positioning devices and the deformation characteristic of the strip rolling mill are found from a measured value of the thrust counterforces in the axial direction of the roll acting on at least all the rolls except for the backup rolls in the kiss-roll tightening state and also from a measured value of the roll forces of the backup roll acting on the backup roll chocks of the top and the bottom backup roll in the vertival direction. According to the thus obtained zero point of the roll positioning devices or the deformation characteristic of the strip rolling mill, the setting and control of the roll forces is executed when rolling is carried out.

公开(公告)号：US20090166611A1

公开(公告)日：2009-07-02

申请号：US12224492

申请日：2006-12-27

申请人： Satoru Ohta

发明人： Satoru Ohta

IPC分类号： H01L51/40 ,  H01L51/10

CPC分类号： H01L51/0529 ,  H01L21/02123 ,  H01L21/022 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/3125 ,  H01L51/052 ,  H01L51/0545

摘要： [Problems] To provide an organic transistor which can achieve a reduced leak current from a gate electrode.[Solving Means] An organic transistor including a substrate 1, a pair of a source electrode 4 and a drain electrode 5, an organic semiconductor layer 6 provided between the source electrode 4 and the drain electrode 5, and a gate electrode 2 provided in association with the organic semiconductor 6 with a gate insulating layer 3 interposed therebetween, wherein the gate insulating layer 3 has a stacked structure including at least an organic insulating layer 3a and an inorganic barrier layer 3b.

摘要翻译： [问题]提供一种可以实现从栅电极减小的漏电流的有机晶体管。 [解决方案]一种有机晶体管，包括基板1，一对源电极4和漏电极5，设置在源极电极4和漏电极5之间的有机半导体层6和关联地设置的栅极电极2 其中介于其间的栅极绝缘层3的有机半导体6，其中栅极绝缘层3具有至少包括有机绝缘层3a和无机阻挡层3b的堆叠结构。

公开(公告)号：US20060145139A1

公开(公告)日：2006-07-06

申请号：US10526075

申请日：2003-08-26

申请人： Kenji Nakamura ,  Satoru Ohta

发明人： Kenji Nakamura ,  Satoru Ohta

IPC分类号： H01L29/08

CPC分类号： H01L51/0516 ,  H01L24/02 ,  H01L51/0545 ,  H01L2224/02166 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079

摘要： There are provided an organic semiconductor device and a method of manufacturing the same, which make it possible to easily form a dense polymeric insulating film with high insulating properties as a gate insulating film, without using a vacuum apparatus, and to dispense with the step of patterning the gate insulating film. Gate electrodes 12 are formed on a glass substrate 11. Then, poly(1,4-bis(2-methylstyryl)benzene) (bis-MSB) is dissolved in benzonitrile containing 0.1 mol/l of tetrabutylammonium tetrafluoroborate, whereafter the glass substrate 11 having the gate electrodes 12 formed thereon is soaked in the solution to thereby form dense poly(bis-MSB) films by electrochemical polymerization.

摘要翻译： 提供了一种有机半导体器件及其制造方法，其可以在不使用真空装置的情况下容易地形成具有高绝缘性的致密聚合物绝缘膜作为栅极绝缘膜，并且省略步骤 图案化栅极绝缘膜。 在玻璃基板11上形成栅电极12.然后，将聚（1,4-双（2-甲基苯乙烯基）苯）（双-MSB）溶解在含有0.1mol / l四氟硼酸四丁基铵的苄腈中，然后将玻璃基板11 将其上形成有栅电极12的方法浸泡在溶液中，从而通过电化学聚合形成致密的聚（双-MSB）膜。