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88 条记录 (耗时 0.021 秒)

    Image processing method and electronic device
    1.
    发明授权
    Image processing method and electronic device 失效
    图像处理方法和电子设备

    公开(公告)号：US6005545A

    公开(公告)日：1999-12-21

    申请号：US714153

    申请日：1997-04-03

    申请人： Takashi Nishida ,  Kenji Sato

    发明人： Takashi Nishida ,  Kenji Sato

    IPC分类号： G06F3/0488 ,  G06F19/00 ,  G06T11/00 ,  G06T11/60 ,  G06T13/80 ,  G09G5/02

    CPC分类号： G06F3/04883 ,  A63F13/005 ,  G06T11/00 ,  G06T11/60 ,  G06T13/80

    摘要： An electronic device draws pictures with a plurality of color on a monitor 90. A sound making processing unit 108 reads a color displayed at a position commanded by a touch pen 28 and makes sounds corresponding to the read color. A movable body drawing unit 106 generates a movable body corresponding to a color displayed on the monitor 90 and draws the movable body so as to move the same corresponding to the color. Image processing can be conducted on pictures drawn on the monitor screen by game players.

    摘要翻译： PCT No.PCT / JP95 / 02570 Sec。 371日期1997年4月3日 102（e）日期1997年4月3日PCT 1995年12月14日PCT PCT。 公开号WO96 / 22580 日期1996年7月25日电子设备在监视器90上绘制多种颜色的图像。声音处理单元108读取由触摸笔28指令的位置显示的颜色，并且产生与所读取的颜色相对应的声音。 移动体绘制单元106产生与显示器90上显示的颜色相对应的可移动体，并且可移动体移动以对应于颜色移动。 图像处理可以由游戏玩家在监视器屏幕上绘制的图像进行。

    Semiconductor device and manufacturing method thereof
    2.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07776495B2

    公开(公告)日：2010-08-17

    申请号：US11725507

    申请日：2007-03-20

    申请人： Masahito Hiroshima ,  Takashi Nishida

    发明人： Masahito Hiroshima ,  Takashi Nishida

    IPC分类号： G03F7/00

    CPC分类号： H01L28/91 ,  G03F1/00 ,  H01L27/10808 ,  H01L27/10852

    摘要： A semiconductor device and a manufacturing method thereof in which the peripheral length of an aperture and the mechanical strength of cylinders in a cell can be increased without changing the occupation rate of patterns in the cell. By forming a slit in the middle of each mask pattern so as not to expose parts of wafer, the aperture of the wafer becomes nearly cocoon-shaped with a constriction in the middle. Thereby, the peripheral length of the aperture can be increased without changing the occupation rate of the mask patterns in a cell. Further, the shape of the bottom of the aperture also becomes nearly cocoon-shaped with a constriction in the middle, and therefore it is possible to increase the mechanical strength of cylinders.

    摘要翻译： 一种半导体器件及其制造方法，其中可以增加孔的圆周长度和单元中气缸的机械强度，而不改变单元中图案的占用率。 通过在每个掩模图案的中间形成狭缝以不暴露晶片的一部分，晶片的孔径在中间收缩而变为几乎茧形。 因此，可以增加孔径的周长，而不改变单元中的掩模图案的占有率。 此外，孔的底部的形状也变得几乎茧形，中间有收缩，因此可以提高气缸的机械强度。

    Semiconductor device and manufacturing method thereof
    3.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07208788B2

    公开(公告)日：2007-04-24

    申请号：US10995134

    申请日：2004-11-24

    申请人： Masahito Hiroshima ,  Takashi Nishida

    发明人： Masahito Hiroshima ,  Takashi Nishida

    IPC分类号： H01L29/73

    CPC分类号： H01L28/91 ,  G03F1/00 ,  H01L27/10808 ,  H01L27/10852

    摘要： A semiconductor device and a manufacturing method thereof in which the peripheral length of an aperture and the mechanical strength of cylinders in a cell can be increased without changing the occupation rate of patterns in the cell. By forming a slit in the middle of each mask pattern so as not to expose parts of wafer, the aperture of the wafer becomes nearly cocoon-shaped with a constriction in the middle. Thereby, the peripheral length of the aperture can be increased without changing the occupation rate of the mask patterns in a cell. Further, the shape of the bottom of the aperture also becomes nearly cocoon-shaped with a constriction in the middle, and therefore it is possible to increase the mechanical strength of cylinders.

    摘要翻译： 一种半导体器件及其制造方法，其中可以增加孔的圆周长度和单元中气缸的机械强度，而不改变单元中图案的占用率。 通过在每个掩模图案的中间形成狭缝以不暴露晶片的一部分，晶片的孔径在中间收缩而变为几乎茧形。 因此，可以增加孔径的周长，而不改变单元中的掩模图案的占有率。 此外，孔的底部的形状也变得几乎茧形，中间有收缩，因此可以提高气缸的机械强度。

    Semiconductor memory device having flip-flop circuits
    4.
    发明授权
    Semiconductor memory device having flip-flop circuits 失效
    具有触发电路的半导体存储器件

    公开(公告)号：US5132771A

    公开(公告)日：1992-07-21

    申请号：US503928

    申请日：1990-04-04

    申请人： Toshiaki Yamanaka ,  Naotaka Hashimoto ,  Takashi Hashimoto ,  Akihiro Shimizu ,  Koichiro Ishibashi ,  Katsuro Sasaki ,  Katsuhiro Shimohigashi ,  Eiji Takeda ,  Yoshio Sakai ,  Takashi Nishida ,  Osamu Minato ,  Toshiaki Masuhara ,  Shoji Hanamura ,  Shigeru Honjo ,  Nobuyuki Moriwaki

    发明人： Toshiaki Yamanaka ,  Naotaka Hashimoto ,  Takashi Hashimoto ,  Akihiro Shimizu ,  Koichiro Ishibashi ,  Katsuro Sasaki ,  Katsuhiro Shimohigashi ,  Eiji Takeda ,  Yoshio Sakai ,  Takashi Nishida ,  Osamu Minato ,  Toshiaki Masuhara ,  Shoji Hanamura ,  Shigeru Honjo ,  Nobuyuki Moriwaki

    IPC分类号： G11C11/412 ,  H01L27/11

    CPC分类号： G11C11/4125 ,  H01L27/1104 ,  Y10S257/903

    摘要： A semiconductor static random access memory having a high .alpha.-ray immunity and a high packing density is provided which is also capable of high-speed operation. A semiconductor memory device comprises static random access memory cells each including a flip-flop circuit. Storage nodes of each flip-flop circuit have respective pn-junctions formed at regions sandwiched between gate electrodes of first insulated gate field effect transistors and gate electrodes of second insulated gate field effect transistors, respectively. The pn-junction has an area smaller than that of a channel portion of the first or second insulated gate field effect transistor. The gate electrode of one of the two first insulated gate field effect transistors and the drain region of the other insulated gate field effect transistor, on one hand, and the drain region of the one insulated gate field effect transistor and the gate electrode of the other insulated gate field effect transistor, on the other hand, are electrically cross-coupled mutually through first and second electrically conductive films, respectively. Also, to increase packing density and enhance immunity to soft error, the gate electrodes of the first and second insulated gate field effect transistors extend substantially in parallel with one another and the channel regions of the first and second insulated gate field effect transistors extend substantially in parallel with one another.

    摘要翻译： 提供了具有高α射线抗扰度和高封装密度的半导体静态随机存取存储器，其也能够进行高速操作。 半导体存储器件包括每个包括触发器电路的静态随机存取存储器单元。 每个触发器电路的存储节点分别形成在夹在第一绝缘栅场效应晶体管的栅电极和第二绝缘栅场效应晶体管的栅电极之间的区域处的各pn结。 pn结的面积小于第一或第二绝缘栅场效应晶体管的沟道部分的面积。 两个第一绝缘栅场效应晶体管中的一个的栅极电极和另一个绝缘栅场效应晶体管的漏极区域以及一个绝缘栅场效应晶体管的漏极区域和另一个绝缘栅极场效应晶体管的栅极电极 另一方面，绝缘栅场效应晶体管分别通过第一和第二导电膜互相交叉耦合。 此外，为了增加封装密度并增强对软误差的抵抗力，第一和第二绝缘栅场效应晶体管的栅极彼此基本平行地延伸，并且第一和第二绝缘栅场效应晶体管的沟道区域基本上以 彼此平行。