公开(公告)号：US08075698B2

公开(公告)日：2011-12-13

申请号：US10525797

申请日：2003-08-28

申请人： Hiroshi Kannan ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

发明人： Hiroshi Kannan ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

IPC分类号： B08B7/04

CPC分类号： C23C16/4412 ,  C23C16/4405 ,  C23C16/52 ,  H01L21/67028 ,  H01L21/67253 ,  H01L22/26

摘要： A substrate processing unit comprises a processing vessel for receiving a substrate, a cleaning gas supply system for supplying cleaning gas to the processing vessel so as to clean the interior of the processing vessel, an exhauster for exhausting the processing vessel, an operating state detector for detecting the operating state of the exhauster, and an end point detector for detecting the end point of the cleaning on the basis of the detection result from the operating state detector.

摘要翻译： 基板处理单元包括用于接收基板的处理容器，用于向处理容器提供清洁气体以清洁处理容器内部的清洁气体供应系统，用于排出处理容器的排气器，用于排出处理容器的操作状态检测器 检测排气器的运行状态，以及终点检测器，用于根据来自运行状态检测器的检测结果来检测清洗的终点。

公开(公告)号：US20090214758A1

公开(公告)日：2009-08-27

申请号：US12421271

申请日：2009-04-09

申请人： Hiroshi KANNAN ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

发明人： Hiroshi KANNAN ,  Tadahiro Ishizaka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Takashi Shigeoka

IPC分类号： C23C16/52

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45557

摘要： In a processing apparatus, a process gas including a source gas (TiCl4, NH3) and an inert gas (N2) is supplied into a process chamber (2). A pressure meter (6) detects a pressure in the process chamber (2) so as to control an amount of flow of the process gas supplied to the process chamber (2) based on a result of the detection. A source gas is purged by the inert gas. By maintaining the amount of flow of the source gas constant and controlling the amount of flow of the inert gas, an amount of flow the entire process gas is controlled so as to maintain a pressure in the process chamber (2) constant. Since a time spent on evacuation of the source gas is reduced, a time for switching the source gas is reduced. Additionally, a temperature of a surface of a substrate during processing can be maintained constant.

摘要翻译： 在处理装置中，将包括源气体（TiCl 4，NH 3）和惰性气体（N 2）的处理气体供给到处理室（2）中。 压力计（6）检测处理室（2）中的压力，以便根据检测结果控制供给处理室（2）的处理气体的流量。 源气体被惰性气体吹扫。 通过保持源气体的流量恒定并控制惰性气体的流量，控制整个处理气体的流量，以保持处理室（2）中的压力恒定。 由于减少了用于排出源气体的时间，因此减少了源气体的切换时间。 此外，可以保持处理期间的基板表面的温度恒定。

公开(公告)号：US06488407B1

公开(公告)日：2002-12-03

申请号：US09527243

申请日：2000-03-17

申请人： Masayuki Kitamura ,  Eisuke Morisaki ,  Nobuaki Takahashi ,  Takashi Shigeoka

发明人： Masayuki Kitamura ,  Eisuke Morisaki ,  Nobuaki Takahashi ,  Takashi Shigeoka

IPC分类号： G01J500

CPC分类号： G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0818 ,  G01J5/0887 ,  G01J5/0896 ,  G01J2005/0051 ,  G01J2005/0077

摘要： The present invention intends to improve the accuracy of temperature measurement when measuring the temperature of a semiconductor wafer by a radiation thermometer on the basis of the idea of virtual blackbody simulated by multiple reflection of light. A system includes a wafer (W), a circular reflector 1 of a radius R disposed opposite to the wafer (W), and a probe (2) disposed in a through hole formed in the reflector (1). The probe (2) is a through hole. The radiation intensity of radiation passed the through hole is determined by image data provided by a CCD camera disposed behind the back surface of the reflector (1). An error in measured radiation intensity of radiation falling the probe (2) due to light that enters a space between the wafer (W) and the reflector (1) and a space between the reflector (1) and the probe (2) and light leaks from the same spaces is corrected, the emissivity of the wafer (W) is calculated and the temperature of the wafer (W) is determined.

摘要翻译： 本发明旨在通过基于由多次反射光模拟的虚拟黑体的想法，通过辐射温度计测量半导体晶片的温度来提高温度测量的精度。 系统包括晶片（W），与晶片（W）相对设置的半径为R的圆形反射器1和设置在形成于反射器（1）中的通孔中的探针（2）。 探针（2）是通孔。 通过通孔的辐射的辐射强度由设置在反射器（1）的后表面后面的CCD照相机提供的图像数据确定。 由于进入晶片（W）和反射器（1）之间的空间的光以及反射器（1）和探针（2）之间的空间以及光线（2）引起的探测器（2）的测量辐射强度的误差 校正相同空间的泄漏，计算晶片的发射率（W），并确定晶片（W）的温度。

公开(公告)号：US20080290396A1

公开(公告)日：2008-11-27

申请号：US12125546

申请日：2008-05-22

申请人： Yasuhiko MATSUNAGA ,  Yuji Takeuchi ,  Takashi Shigeoka

发明人： Yasuhiko MATSUNAGA ,  Yuji Takeuchi ,  Takashi Shigeoka

IPC分类号： H01L29/00

CPC分类号： H01L27/105 ,  H01L27/0207 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11529

摘要： A semiconductor memory according to an aspect of this invention comprises a semiconductor substrate which includes a memory cell array region and an interconnect line region adjoining the memory cell array region, memory cells which are provided in the memory cell array region, contact plugs which are provided in the interconnect line region, and control gate lines which are provided so as to extend from the interconnect line region to the memory cell array region and which connect the contact plugs with the memory cells, wherein the control gate lines provided in the memory cell array region include metal silicide and the control gate lines provided in the interconnect line region include no metal silicide at any part of the interconnect line region.

摘要翻译： 根据本发明的一个方面的半导体存储器包括半导体衬底，其包括存储单元阵列区域和与存储单元阵列区域相邻的互连线区域，设置在存储单元阵列区域中的存储单元，提供的接触插头 以及控制栅极线，其设置为从互连线区域延伸到存储单元阵列区域，并将接触插头与存储器单元连接，其中设置在存储单元阵列中的控制栅极线 区域包括金属硅化物，并且设置在互连线区域中的控制栅极线在互连线区域的任何部分不包括金属硅化物。

公开(公告)号：US06891131B2

公开(公告)日：2005-05-10

申请号：US10257622

申请日：2001-04-17

申请人： Takeshi Sakuma ,  Takashi Shigeoka ,  Yicheng Li

发明人： Takeshi Sakuma ,  Takashi Shigeoka ,  Yicheng Li

IPC分类号： H01L21/26 ,  C23C16/48 ,  H01L21/00 ,  H01L21/687 ,  F27B5/14

CPC分类号： H01L21/68792 ,  C23C16/481 ,  H01L21/67115

摘要： A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object. The plurality of lamps are controlled individually for respective zones of the to-be-processed object.

摘要翻译： 热处理系统通过借助于加热灯系统对被处理物体施加辐射热，对大致圆形待处理物体进行预定的热处理。 加热灯系统包括多个灯，其同心地设置成对应于被处理物体。 对待处理物体的各个区域分别控制多个灯。

公开(公告)号：US06534749B2

公开(公告)日：2003-03-18

申请号：US09968618

申请日：2001-10-02

申请人： Takashi Shigeoka

发明人： Takashi Shigeoka

IPC分类号： F27B518

CPC分类号： H01L21/67248 ,  C23C16/481 ,  C30B25/105 ,  C30B25/12 ,  C30B25/16 ,  F27D21/0014 ,  H01L21/67115

摘要： A heat treatment apparatus applies an accurate heat treatment to a wafer by performing an accurate measurement of a temperature of a wafer by a radiation thermometer. Halogen lamps heat the wafer by irradiating a light on a front surface of the wafer. A guard ring supports the wafer so that the front surface of the wafer faces the halogen lamps. A gap is formed between the guard ring and a back surface of the wafer. The radiation thermometer detects a light radiated from the backside of the wafer by a quartz rod facing the backside of the substrate. The wafer placed on the guard ring defines a first space on the front surface side of the wafer and a second space on the back surface side of the wafer. The gap is configured and arranged so that an incident rate of a stray light entering the second space from the first space through the gap and incident on the quartz rod is equal to or less than a predetermined value, where the incident rate is defined by a ratio of an amount of the stray light incident on the quartz rod to an amount of light radiated by the halogen lamps.

公开(公告)号：US20120217461A1

公开(公告)日：2012-08-30

申请号：US13404795

申请日：2012-02-24

申请人： Shigeki KOBAYASHI ,  Takashi Shigeoka ,  Mitsuru Sato ,  Takahiro Hirai ,  Katsuyuki Sekine ,  Kazuya Kinoshita ,  Soichi Yamazaki ,  Ryota Fujitsuka ,  Kensuke Takahashi ,  Yasuhiro Nojiri ,  Masaki Yamato ,  Hiroyuki Fukumizu ,  Takeshi Yamaguchi

发明人： Shigeki KOBAYASHI ,  Takashi Shigeoka ,  Mitsuru Sato ,  Takahiro Hirai ,  Katsuyuki Sekine ,  Kazuya Kinoshita ,  Soichi Yamazaki ,  Ryota Fujitsuka ,  Kensuke Takahashi ,  Yasuhiro Nojiri ,  Masaki Yamato ,  Hiroyuki Fukumizu ,  Takeshi Yamaguchi

IPC分类号： H01L45/00 ,  H01L21/8239 ,  B82Y99/00

CPC分类号： H01L27/2409 ,  B82Y10/00 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608

摘要： A semiconductor memory device according to an embodiment includes: first lines provided on a substrate; second lines provided between the first lines and the substrate so as to intersect the first lines; and a first memory cell array including first memory cells, each of the first memory cells being provided at respective intersections of the first lines and the second lines and including a current rectifying element and a variable resistor connected in series. The variable resistor of the first memory cell includes a first recording layer and a second recording layer, the first recording layer being made of an oxide of a first metal material, the second recording layer being made of the first metal material and being formed so as to contact with the first recording layer. The second recording layer is closer to the first line than the first recording layer is.

摘要翻译： 根据实施例的半导体存储器件包括：设置在基板上的第一线; 设置在第一线和基板之间以与第一线相交的第二线; 以及包括第一存储单元的第一存储单元阵列，每个第一存储单元设置在第一行和第二行的相应交点处，并且包括串联连接的电流整流元件和可变电阻器。 第一存储单元的可变电阻器包括第一记录层和第二记录层，第一记录层由第一金属材料的氧化物制成，第二记录层由第一金属材料制成并形成为 与第一记录层接触。 第二记录层比第一记录层更靠近第一行。

公开(公告)号：US20060068104A1

公开(公告)日：2006-03-30

申请号：US11231962

申请日：2005-09-22

申请人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

发明人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

IPC分类号： C23C16/00

CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/7685 ,  H01L2221/1078

摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.

摘要翻译： 用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。 在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b） 将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。 在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤， 将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

公开(公告)号：US06860634B2

公开(公告)日：2005-03-01

申请号：US10399758

申请日：2001-10-23

申请人： Takashi Shigeoka

发明人： Takashi Shigeoka

IPC分类号： G01J5/02 ,  G01J5/00 ,  G01J5/08 ,  G02B6/04 ,  H01L21/22 ,  H01L21/26 ,  H01L21/31 ,  H01L21/66 ,  G01K11/00

CPC分类号： G01J5/08 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/0818 ,  G01J5/0821 ,  G01J5/0846

摘要： A method of temperature measurement for measuring a temperature of an object to be measured that is heated by a heating source in a multiplex-reflection environment by using two radiation thermometers provided at a measurement part separated from the object to be measured is provided. In the method, two of the radiation thermometers have a rod that is embedded in the measurement part and can receive radiation light from the object to be measured, and an optical fiber connected to the rod; numerical apertures of the radiation thermometers are different; the multiplex-reflection environment is formed between a surface of the measurement part facing the object to be measured and the measurement part; a radiation rate ε of the object to be measured based on a result of a measurement of two of the thermometers and the temperature of the object to be measured is calculated by the following equations α=1−(1−NA·N1)N2/(D1/D2) εeff=(1−α)·ε+α·ε/{1−F·r·(1−ε)} wherein D1 represents a diameter of the rod of the radiation thermometers, NA represents the numerical aperture, D2 represents a distance between the object to be measured and the surface of the measurement part, r represents a reflectivity of the surface of the measurement part, F represents a view factor, α represents a multiplex reflection coefficient, εeff represents an effective radiation rate of the object to be measured, and N1 and N2 are parameters.

摘要翻译： 提供一种温度测量方法，用于通过使用设置在与待测量物体分离的测量部分处的两个辐射温度计来测量在多重反射环境中由加热源加热的待测物体的温度。 在该方法中，辐射温度计中的两个具有嵌入测量部分中的杆，并且可以接收来自被测量物体的辐射光和连接到杆的光纤; 辐射温度计的数值孔径不同; 所述多重反射环境形成在所述测量部件的面向被测量物体的表面与所述测量部件之间; 基于两个温度计的测量结果和被测量物体的温度的被测量物体的辐射速率ε由以下等式计算，其中D1表示辐射温度计的棒的直径，NA 表示数值孔径，D2表示测量对象与测量部件的表面之间的距离，r表示测量部件表面的反射率，F表示视图因子，alpha表示多重反射系数，epsiloneff表示 待测物体的有效辐射率，N1和N2是参数。

公开(公告)号：US06479801B1

公开(公告)日：2002-11-12

申请号：US09691206

申请日：2000-10-19

申请人： Takashi Shigeoka ,  Takeshi Sakuma

发明人： Takashi Shigeoka ,  Takeshi Sakuma

IPC分类号： H05B102

CPC分类号： H01L21/67248 ,  G01J5/0003

摘要： A temperature measuring method measures the temperature of an object of measurement placed in a multiple reflection environment by using a radiation thermometer that uses an effective emissivity &egr;eff for measurement. The effective emissivity &egr;eff is calculated by using an expression: &egr;eff=(1−&agr;)·&egr;+&agr;·&egr;/{1−F·r·(1−&egr;)} F: View factor &egr;: Emissivity of the object r: Reflectivity of a reflecting plate included in the radiation thermometer &agr;: Weighting factor for compensating effects of multiple reflection.

摘要翻译： 温度测量方法通过使用使用有效发射率epsieff进行测量的辐射温度计来测量放置在多重反射环境中的测量对象的温度。 通过使用以下表达式计算有效发射率epsieff：epsieff =（1-alpha）.epsi + alpha.epsi / {1-Fr（1-epsi）} F：视图因子epsi：对象的发射率：反射的反射率 包含在辐射热中的板：加权因子，用于补偿多重反射的影响。