公开(公告)号：US20090269933A1

公开(公告)日：2009-10-29

申请号：US11991937

申请日：2006-09-22

申请人： Takatomo Yamaguchi ,  Akinori Tanaka ,  Daisuke Hara

发明人： Takatomo Yamaguchi ,  Akinori Tanaka ,  Daisuke Hara

IPC分类号： H01L21/465 ,  C23C16/458 ,  H01L21/677 ,  H01L21/46 ,  C23C14/50

CPC分类号： H01L21/67742 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67757

摘要： A substrate processing apparatus comprises a processing chamber for storing a substrate and performing a specified processing on the substrate, a substrate holding jig for holding the substrate in the processing chamber, a placement stand capable of moving the substrate holding jig inside and outside the processing chamber while mounting the substrate holding jig, a substrate holding jig movement mechanism for moving the substrate holding jig to a location different from the placement stand while holding the substrate holding jig, and a substrate holding jig movement suppression mechanism for suppressing vertical and horizontal movement of the substrate holding jig in order to keep the substrate holding jig mounted on the placement unit of the substrate holding jig movement mechanism.

摘要翻译： 基板处理装置包括：处理室，用于存储基板并在基板上执行指定的处理;基板保持夹具，用于将基板保持在处理室中;放置台，其能够将处理室内外的基板保持夹具移动 同时安装基板保持夹具，用于在保持基板保持夹具的同时将基板保持夹具移动到与放置台不同的位置的基板保持夹具移动机构，以及用于抑制基板保持夹具的垂直和水平移动的基板保持夹具移动抑制机构 基板保持夹具，以将基板保持夹具安装在基板保持夹具移动机构的放置单元上。

公开(公告)号：US09028614B2

公开(公告)日：2015-05-12

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/673 ,  H01L21/677 ,  C23C16/32 ,  C23C16/44

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20120220108A1

公开(公告)日：2012-08-30

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  H01L21/306 ,  C23C16/455

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20120220107A1

公开(公告)日：2012-08-30

申请号：US13405638

申请日：2012-02-27

申请人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

发明人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

IPC分类号： H01L21/20 ,  B65D85/00 ,  C30B25/12

CPC分类号： H01L21/67757 ,  H01L21/67309

摘要： Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base (110) configured to hold a wafer (14) at an inner circumference side thereof, and boat columns (31a to 31c) each including a holder retainer (HS) configured to hold an outer circumference side of the holder base (110), wherein an outer diameter of the holder base (110) is larger than that of the wafer (14), and the holder base (110) is detachable from the holder retainers (HS).

摘要翻译： 提供一种具有可承受高温而不影响成膜精度的晶片的堆叠结构的基板处理装置。 所述堆叠结构包括构造成在其内周侧保持晶片（14）的保持器基座（110）和每个包括保持器保持器（HS）的船柱（31a至31c），所述保持器保持器（HS）构造成保持所述 保持器基座（110），其中保持器基座（110）的外径大于晶片（14）的外径，并且保持器基座（110）可从保持器保持器（HS）拆卸。

公开(公告)号：US09222732B2

公开(公告)日：2015-12-29

申请号：US13229543

申请日：2011-09-09

申请人： Kenji Shirako ,  Takatomo Yamaguchi ,  Shuhei Saido ,  Akihiro Sato

发明人： Kenji Shirako ,  Takatomo Yamaguchi ,  Shuhei Saido ,  Akihiro Sato

IPC分类号： H05B6/00 ,  H05B6/22 ,  F28F1/00 ,  C23C16/44 ,  C23C16/458 ,  C30B25/02 ,  C30B29/36 ,  F28F3/08 ,  H01L21/67 ,  H05B6/02 ,  H05B6/10 ,  F28F21/02

CPC分类号： F28F1/00 ,  C23C16/44 ,  C23C16/4584 ,  C30B25/02 ,  C30B29/36 ,  F28F3/086 ,  F28F21/02 ,  H01L21/67109 ,  H05B6/02 ,  H05B6/105

摘要： Provided is a substrate processing apparatus capable of maintaining a temperature of a furnace port part at a heat-resistant temperature or less of each member constituting the furnace part. The substrate processing apparatus includes a process chamber configured to process a plurality of substrates vertically stacked at predetermined intervals; a substrate retainer configured to hold the plurality of substrates in the process chamber; and a first heat exchanger installed in the process chamber to support the substrate retainer from a lower portion of the substrate retainer, and configured to perform a heat exchange with a gas flowing in a downward direction from a side of the substrate retainer in the process chamber, wherein the first heat exchanger includes a hollow cylindrical insulating tube vertically extending in the downward direction and an insulating plate installed in the insulating tube, and regions in the insulating tube over and under the insulating plate are spatially connected to each other.

摘要翻译： 提供一种能够将炉口部的温度保持在构成炉部的各构件的耐热温度以下的基板处理装置。 基板处理装置包括：处理室，被配置为处理以预定间隔垂直堆叠的多个基板; 衬底保持器，其构造成将所述多个衬底保持在所述处理室中; 以及第一热交换器，其安装在所述处理室中，以从所述基板保持器的下部支撑所述基板保持器，并且被配置为与所述处理室中的所述基板保持器的侧面沿着向下的方向流动的气体进行热交换 其特征在于，所述第一热交换器具有向下方延伸的中空圆柱形绝缘管和安装在所述绝缘管中的绝缘板，绝缘板的上下绝缘体的区域彼此空间连接。

公开(公告)号：US06737613B2

公开(公告)日：2004-05-18

申请号：US10395179

申请日：2003-03-25

申请人： Takatomo Yamaguchi ,  Kazuhiro Morimitsu ,  Tatsuhisa Matsunaga

发明人： Takatomo Yamaguchi ,  Kazuhiro Morimitsu ,  Tatsuhisa Matsunaga

IPC分类号： F27B514

CPC分类号： H01L21/67303 ,  C30B31/10 ,  H01L21/67109

摘要： A heat treatment apparatus includes a vertically disposed process tube defining a reaction chamber therein; a main heater for heating the reaction chamber, the main heater being disposed outside of the process tube; a boat for holding a plurality of wafers, the boat being loaded into and unloaded from the reaction chamber; and a boat rotating device for rotating the boat. The boat rotating device is provided with a rotatable hollow shaft assembly and a fixed shaft coaxially disposed inside the rotatable hollow shaft assembly. A sub-heater is attached to an upper end of the fixed shaft, and the boat and an insulating portion are disposed on the rotatable hollow shaft assembly.

摘要翻译： 一种热处理设备，包括在其中限定反应室的垂直设置的处理管; 用于加热反应室的主加热器，主加热器设置在处理管的外部; 用于保持多个晶片的船，所述船被装载到所述反应室中并从所述反应室卸载; 以及用于旋转船的船旋转装置。 船用旋转装置设置有可旋转的空心轴组件和同轴地设置在可旋转中空轴组件内部的固定轴。 副加热器附接到固定轴的上端，并且船和绝缘部分设置在可旋转的中空轴组件上。

公开(公告)号：US20110000425A1

公开(公告)日：2011-01-06

申请号：US12822293

申请日：2010-06-24

申请人： Shuhei Saido ,  Takatomo Yamaguchi ,  Kenji Shirako

发明人： Shuhei Saido ,  Takatomo Yamaguchi ,  Kenji Shirako

IPC分类号： C30B25/10 ,  C30B25/14

CPC分类号： C30B29/36 ,  C23C16/325 ,  C23C16/46 ,  C30B25/10 ,  C30B25/165 ,  Y10T117/10 ,  Y10T117/1016

摘要： A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate.

摘要翻译： 一种基板处理装置，包括：处理基板的反应室; 设置在所述反应室中的加热目标物体至少包围设置有所述基板的区域，所述加热对象物体具有封闭端的圆筒形状; 设置在所述反应室和所述加热对象物之间以包围所述加热对象物体的绝缘子，所述绝缘体具有圆筒形状，所述绝缘体的封闭端面对所述加热目标物体的封闭端; 设置在所述反应室外部的感应加热单元，至少包围所述基板设置的区域; 第一气体供应系统，用于将至少一种源气体供应到所述反应室中; 以及控制器，用于控制第一气体供应系统，使得第一气体供应系统至少将源气体供应到反应室中以处理基板。

公开(公告)号：US07455734B2

公开(公告)日：2008-11-25

申请号：US10574568

申请日：2004-11-29

申请人： Takatomo Yamaguchi ,  Kazuhiro Morimitsu

发明人： Takatomo Yamaguchi ,  Kazuhiro Morimitsu

IPC分类号： C23C16/00

CPC分类号： H01L21/67309 ,  C23C16/4583 ,  H01L21/67109 ,  H01L2924/0002 ,  H01L2924/00

摘要： A nonuniform portion of a film thickness on a substrate owing to effects of a support column, a substrate mounting portion, and the like which constitute a substrate holder is eliminated, and uniformity of the film thickness of the substrate is enhanced.A substrate processing apparatus houses plural wafers (substrates) held on a boat (substrate holder) in a processing chamber, supplying processing gas to the heated processing chamber, thereby performing film-forming processing for the wafers. The boat includes: at least three support columns 15 provided substantially vertically; plural wafer support portions 16 (substrate mounting portions) which are provided at multi-stages on the support columns and mount the plural wafers substantially horizontally at a predetermined interval; and plural ring-like plates 13 arranged on the support columns 15, and provided substantially horizontally at a predetermined interval with respect to the wafers supported on the wafer support portions 16.

摘要翻译： 消除了由于构成衬底保持器的支撑柱，衬底安装部等的影响而在衬底上的不均匀部分的膜厚度，并且提高了衬底的膜厚度的均匀性。 基板处理装置容纳保持在处理室中的船（基板支架）上的多个晶片（基板），将加工气体供给到加热处理室，从而对晶片进行成膜处理。 该船包括：至少三个基本垂直地设置的支撑柱15; 多个晶片支撑部16（基板安装部），其设置在支撑柱上的多级，并以预定间隔大致水平安装多个晶片; 和布置在支撑柱15上的多个环状板13，并相对于支撑在晶片支撑部分16上的晶片以预定的间隔大致水平地设置。

公开(公告)号：US08771416B2

公开(公告)日：2014-07-08

申请号：US12822293

申请日：2010-06-24

申请人： Shuhei Saido ,  Takatomo Yamaguchi ,  Kenji Shirako

发明人： Shuhei Saido ,  Takatomo Yamaguchi ,  Kenji Shirako

IPC分类号： C30B25/10

CPC分类号： C30B29/36 ,  C23C16/325 ,  C23C16/46 ,  C30B25/10 ,  C30B25/165 ,  Y10T117/10 ,  Y10T117/1016

摘要： A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate.

摘要翻译： 一种基板处理装置，包括：处理基板的反应室; 设置在所述反应室中的加热目标物体至少包围设置有所述基板的区域，所述加热对象物体具有封闭端的圆筒形状; 设置在所述反应室和所述加热对象物之间以包围所述加热对象物体的绝缘体，所述绝缘体具有圆筒形状，所述绝缘体的封闭端面对所述加热目标物体的封闭端; 设置在所述反应室外部的感应加热单元，至少包围所述基板设置的区域; 第一气体供应系统，用于将至少一种源气体供应到所述反应室中; 以及控制器，用于控制第一气体供应系统，使得第一气体供应系统至少将源气体供应到反应室中以处理基板。

公开(公告)号：US20120214317A1

公开(公告)日：2012-08-23

申请号：US13399558

申请日：2012-02-17

申请人： Masaki Murobayashi ,  Takatomo Yamaguchi ,  Kenji Shirako ,  Shuhei Saido ,  Akihiro Sato ,  Yoshinori Imai

发明人： Masaki Murobayashi ,  Takatomo Yamaguchi ,  Kenji Shirako ,  Shuhei Saido ,  Akihiro Sato ,  Yoshinori Imai

IPC分类号： H01L21/31 ,  C23C16/52 ,  C23C16/455

CPC分类号： H01L21/67757 ,  C23C16/325 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/463 ,  C23C16/54 ,  H01L21/67109

摘要： A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber.

摘要翻译： 衬底处理设备包括：处理室，被配置为处理多个衬底;衬底保持器，容纳在处理室内并且被构造成以垂直间隔的关系保持衬底;热绝缘部分，被配置为从下面支撑衬底保持器 在处理室内设置有用于围绕处理室内的基板容纳区域的加热单元，以及构造成将特定气体供给至少处理室内的绝热部分容纳区域的气体供给系统。