公开(公告)号：US20090029657A1

公开(公告)日：2009-01-29

申请号：US11996504

申请日：2006-07-25

申请人： Takuya Sakaishi ,  Kazuaki Ishioka ,  Yuji Inoue ,  Shingo Higuchi

发明人： Takuya Sakaishi ,  Kazuaki Ishioka ,  Yuji Inoue ,  Shingo Higuchi

IPC分类号： H04B1/04

CPC分类号： H04W56/0035

摘要： An auto frequency control method of this invention has a first step of a base station BS detecting a frequency deviation ΔfBS of an uplink signal transmitted from a mobile station MS, a second step of the base station BS transmitting an instructing amount of increase or decrease fcont of the transmission frequency fMS of the uplink signal to the mobile station MS on the basis of the frequency deviation ΔfBS of the uplink signal, and a third step of the mobile station MS shifting the transmission frequency fMS of the uplink signal according to the instructing amount of increase or decrease fcont transmitted from the base station BS.

摘要翻译： 本发明的自动频率控制方法具有基站BS检测从移动站MS发送的上行链路信号的频率偏差DeltafBS的第一步骤，基站BS发送指令量增加或减少的第二步骤fcont 根据上行链路信号的频率偏差DeltafBS向移动台MS发送上行链路信号的发送频率fMS，第3步骤是根据指示量移动上行链路信号的发送频率fMS， 增加或减少从基站BS发送的fcont。

公开(公告)号：US08432046B2

公开(公告)日：2013-04-30

申请号：US13274738

申请日：2011-10-17

申请人： Osamu Miyata ,  Shingo Higuchi

发明人： Osamu Miyata ,  Shingo Higuchi

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L24/30 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/525 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05559 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2224/05552

摘要： There is provided a semiconductor device with which stress can be prevented from locally concentrating on an external connecting terminal on a post and thus damages of the external connecting terminal can be prevented. The semiconductor device includes a semiconductor chip, a sealing resin layer stacked on a surface of the semiconductor chip, and the post which penetrates the sealing resin layer in a stacking direction of the semiconductor chip and the sealing resin layer, protrudes from the sealing resin layer, and has a periphery of the protruding portion opposedly in contact with a surface of the sealing resin layer in the stacking direction.

摘要翻译： 提供了可以防止应力局部集中在柱上的外部连接端子上的半导体器件，从而可以防止外部连接端子的损坏。 半导体器件包括半导体芯片，层叠在半导体芯片的表面上的密封树脂层和在半导体芯片和密封树脂层的堆叠方向上穿透密封树脂层的柱从密封树脂层突出 并且具有与层叠方向上的密封树脂层的表面相接触的突出部的周边。

公开(公告)号：US08063495B2

公开(公告)日：2011-11-22

申请号：US11992985

申请日：2006-10-03

申请人： Osamu Miyata ,  Shingo Higuchi

发明人： Osamu Miyata ,  Shingo Higuchi

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L24/30 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/525 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05559 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2224/05552

摘要： There is provided a semiconductor device with which stress can be prevented from locally concentrating on an external connecting terminal on a post and thus damages of the external connecting terminal can be prevented. The semiconductor device includes a semiconductor chip, a sealing resin layer stacked on a surface of the semiconductor chip, and the post which penetrates the sealing resin layer in a stacking direction of the semiconductor chip and the sealing resin layer, protrudes from the sealing resin layer, and has a periphery of the protruding portion opposedly in contact with a surface of the sealing resin layer in the stacking direction.

摘要翻译： 提供了可以防止应力局部集中在柱上的外部连接端子上的半导体器件，从而可以防止外部连接端子的损坏。 半导体器件包括半导体芯片，层叠在半导体芯片的表面上的密封树脂层和在半导体芯片和密封树脂层的堆叠方向上穿透密封树脂层的柱从密封树脂层突出 并且具有与层叠方向上的密封树脂层的表面相接触的突出部的周边。

公开(公告)号：US20100187659A1

公开(公告)日：2010-07-29

申请号：US12659968

申请日：2010-03-26

申请人： Osamu Miyata ,  Masaki Kasai ,  Shingo Higuchi

发明人： Osamu Miyata ,  Masaki Kasai ,  Shingo Higuchi

IPC分类号： H01L23/00 ,  H01L21/78

CPC分类号： H01L23/3178 ,  H01L21/78 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/528 ,  H01L23/544 ,  H01L23/562 ,  H01L24/02 ,  H01L24/05 ,  H01L24/10 ,  H01L24/13 ,  H01L24/94 ,  H01L24/96 ,  H01L2223/5446 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.

摘要翻译： 本发明的半导体器件包括具有钝化膜的半导体芯片和设置在钝化膜上方的密封树脂层，用于密封半导体芯片的正面。 密封树脂层延伸到钝化膜的侧表面以覆盖侧表面。

公开(公告)号：US07436063B2

公开(公告)日：2008-10-14

申请号：US11242125

申请日：2005-10-04

申请人： Osamu Miyata ,  Shingo Higuchi

发明人： Osamu Miyata ,  Shingo Higuchi

IPC分类号： H01L23/48

CPC分类号： H01L23/49816 ,  H01L23/49838 ,  H01L2224/16 ,  H01L2224/17051 ,  H01L2224/17104 ,  H01L2924/01078 ,  H01L2924/00012

摘要： A packaging substrate according to the present invention is a packaging substrate to which a semiconductor chip having a plurality of connection metal bodies on a surface thereof is bonded with the surface opposed to the packaging substrate and comprises a wiring provided on a bonding surface to which the semiconductor chip is bonded, a plurality of electrode parts provided on the bonding surface and electrically connected to the wiring, a wiring protective layer for coating and protecting the wiring, electrode openings formed by partly opening the wiring protective layer for separately exposing each of the electrode parts from the wiring protective layer, and escape openings each formed in continuation with each of the electrode openings in the wiring protective layer for introducing therein a part of the connection metal body to be connected to each of the electrode parts to escape.

摘要翻译： 根据本发明的封装基板是其表面上具有多个连接金属体的半导体芯片与与封装基板相对的表面接合的封装基板，并且包括设置在接合表面上的布线， 半导体芯片接合，设置在接合表面上并电连接到布线的多个电极部分，用于涂覆和保护布线的布线保护层，通过部分地打开布线保护层而形成的电极开口，用于分别暴露每个电极 以及与布线保护层中的每个电极开口连续形成的排出口，用于引入要连接到每个电极部分的连接金属体的一部分以逃逸。

公开(公告)号：US20120032325A1

公开(公告)日：2012-02-09

申请号：US13274738

申请日：2011-10-17

申请人： Osamu MIYATA ,  Shingo Higuchi

发明人： Osamu MIYATA ,  Shingo Higuchi

IPC分类号： H01L23/498

CPC分类号： H01L24/30 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/525 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05559 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2224/05552

摘要： There is provided a semiconductor device with which stress can be prevented from locally concentrating on an external connecting terminal on a post and thus damages of the external connecting terminal can be prevented. The semiconductor device includes a semiconductor chip, a sealing resin layer stacked on a surface of the semiconductor chip, and the post which penetrates the sealing resin layer in a stacking direction of the semiconductor chip and the sealing resin layer, protrudes from the sealing resin layer, and has a periphery of the protruding portion opposedly in contact with a surface of the sealing resin layer in the stacking direction.

摘要翻译： 提供了可以防止应力局部集中在柱上的外部连接端子上的半导体器件，从而可以防止外部连接端子的损坏。 半导体器件包括半导体芯片，层叠在半导体芯片的表面上的密封树脂层和在半导体芯片和密封树脂层的堆叠方向上穿透密封树脂层的柱从密封树脂层突出 并且具有与层叠方向上的密封树脂层的表面相接触的突出部的周边。

公开(公告)号：US07977771B2

公开(公告)日：2011-07-12

申请号：US12497531

申请日：2009-07-02

申请人： Shingo Higuchi

发明人： Shingo Higuchi

IPC分类号： H01L23/58 ,  H01L23/04 ,  H01L23/48

CPC分类号： H01L24/05 ,  H01L23/5384 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05547 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00012

摘要： The semiconductor device according to the present invention includes: a semiconductor chip including a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire; a resin layer stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening; and a pad formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion.

摘要翻译： 根据本发明的半导体器件包括：半导体芯片，其包括线和钝化膜，所述钝化膜形成在最外表面上，开口部分地暴露所述导线; 层叠在所述半导体芯片上的树脂层，在与所述开口对置的所述金属丝的一部分相对的位置设置有贯通孔， 以及形成在所述树脂层中的所述通孔的周边部分和所述通孔中的垫，使得在其表面上布置有外部连接端子。 树脂层的周边部分比除了周边部分之外的树脂层的剩余部分更厚。

公开(公告)号：US07714448B2

公开(公告)日：2010-05-11

申请号：US11667849

申请日：2005-11-16

申请人： Osamu Miyata ,  Masaki Kasai ,  Shingo Higuchi

发明人： Osamu Miyata ,  Masaki Kasai ,  Shingo Higuchi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3178 ,  H01L21/78 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/528 ,  H01L23/544 ,  H01L23/562 ,  H01L24/02 ,  H01L24/05 ,  H01L24/10 ,  H01L24/13 ,  H01L24/94 ,  H01L24/96 ,  H01L2223/5446 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.

公开(公告)号：US20090160063A1

公开(公告)日：2009-06-25

申请号：US12339218

申请日：2008-12-19

申请人： Hiroshi Okumura ,  Shingo Higuchi

发明人： Hiroshi Okumura ,  Shingo Higuchi

IPC分类号： H01L23/522

CPC分类号： H01L23/3114 ,  H01L24/05 ,  H01L24/12 ,  H01L24/16 ,  H01L2224/02126 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05568 ,  H01L2224/05599 ,  H01L2224/10126 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14

摘要： A semiconductor device includes a semiconductor substrate; a sealing resin layer formed on a top face of the semiconductor substrate; a metal post formed on the top face of the semiconductor substrate such that a top face of the metal post is exposed through the sealing resin layer; a projecting electrode formed on the top face of the metal post; and a low-elasticity resin layer made of a resin material with an elasticity modulus lower than that of the sealing resin layer and formed on the top face of the sealing resin layer such that part of the low-elasticity resin layer lies between the projecting electrode and the sealing resin layer.

摘要翻译： 半导体器件包括半导体衬底; 密封树脂层，形成在所述半导体衬底的顶面上; 形成在所述半导体基板的上表面上的金属柱，使得所述金属柱的顶面通过所述密封树脂层露出; 形成在金属柱的顶面上的突出电极; 以及弹性模量低于密封树脂层的树脂材料制成的低弹性树脂层，并且形成在密封树脂层的顶面上，使得低弹性树脂层的一部分位于突出电极 和密封树脂层。

公开(公告)号：US08575764B2

公开(公告)日：2013-11-05

申请号：US12659968

申请日：2010-03-26

申请人： Osamu Miyata ,  Masaki Kasai ,  Shingo Higuchi

发明人： Osamu Miyata ,  Masaki Kasai ,  Shingo Higuchi

IPC分类号： H01L23/48

CPC分类号： H01L23/3178 ,  H01L21/78 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/528 ,  H01L23/544 ,  H01L23/562 ,  H01L24/02 ,  H01L24/05 ,  H01L24/10 ,  H01L24/13 ,  H01L24/94 ,  H01L24/96 ,  H01L2223/5446 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.