摘要:
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods and structures may include forming a package structure comprising a discrete antenna disposed on a back side of a device, wherein the discrete antenna comprises an antenna substrate, a through antenna substrate via vertically disposed through the antenna substrate. A through device substrate via that is vertically disposed within the device is coupled with the through antenna substrate via, and a package substrate is coupled with an active side of the device.
摘要:
An apparatus includes a die with through-silicon vias and radio frequency integrated circuit capabilities and it is vertically integrated with a phased-array antenna substrate. The through-silicon via and a radio frequency integrated circuit is coupled to a plurality of antenna elements disposed on the phased-array antenna substrate where each of the plurality of antenna elements is coupled to the through-silicon vias and radio frequency integrated circuit through a plurality of through-silicon vias. A process of assembling the through-silicon vias and radio frequency integrated circuit to the phased-array antenna substrate includes testing the apparatus.
摘要:
An apparatus includes a die with through-silicon vias and radio frequency integrated circuit capabilities and it is vertically integrated with a phased-array antenna substrate. The through-silicon via and a radio frequency integrated circuit is coupled to a plurality of antenna elements disposed on the phased-array antenna substrate where each of the plurality of antenna elements is coupled to the through-silicon vias and radio frequency integrated circuit through a plurality of through-silicon vias. A process of assembling the through-silicon vias and radio frequency integrated circuit to the phased-array antenna substrate includes testing the apparatus.
摘要:
An apparatus includes a die with through-silicon vias and radio frequency integrated circuit capabilities and it is vertically integrated with a phased-array antenna substrate. The through-silicon via and a radio frequency integrated circuit is coupled to a plurality of antenna elements disposed on the phased-array antenna substrate where each of the plurality of antenna elements is coupled to the through-silicon vias and radio frequency integrated circuit through a plurality of through-silicon vias. A process of assembling the through-silicon vias and radio frequency integrated circuit to the phased-array antenna substrate includes testing the apparatus.
摘要:
A three-dimensional inductor is formed in an integrated circuit die using conductive through-body-vias which pass through the body of the die and contact one or more metal interconnect layers on the front side of the die and terminate on the back side of the die. In another embodiment, the through-body-vias may pass through a dielectric material disposed in a plug in the body of the die. In yet another aspect, a transformer may be formed by coupling multiple inductors formed using through-body-vias. In still another aspect, a three-dimensional inductor may include conductors formed of stacks of on chip metallization layers and conductive through-layer-vias disposed in insulation layers between metallization layers. Other embodiments are described.
摘要:
An apparatus includes a radio-frequency die with shielding through-silicon vias and a die backside lattice lid that shield a sector in the RF die from radio - and electromagnetic interference.
摘要:
A three-dimensional inductor is formed in an integrated circuit die using conductive through-body-vias which pass through the body of the die and contact one or more metal interconnect layers on the front side of the die and terminate on the back side of the die. In another embodiment, the through-body-vias may pass through a dielectric material disposed in a plug in the body of the die. In yet another aspect, a transformer may be formed by coupling multiple inductors formed using through-body-vias. In still another aspect, a three-dimensional inductor may include conductors formed of stacks of on chip metallization layers and conductive through-layer-vias disposed in insulation layers between metallization layers. Other embodiments are described.
摘要:
An apparatus includes a radio-frequency die with shielding through-silicon vias and a die backside lattice lid that shield a sector in the RF die from radio- and electromagnetic interference.
摘要:
A glass-based, high-performance 60 GHz/mm-wave antenna includes cavities disposed in a phased-array antenna (PAA) substrate. The cavities are disposed below planar antenna elements. Emitter traces are disposed on the PAA substrate opposite the planar antenna elements and the emitter traces, the cavities, and the planar antenna elements are vertically aligned.
摘要:
A semiconductor package comprises an integrated radio frequency circuit that may be provided in a semiconductor die. A ground plane may be attached to the semiconductor die. The ground plane is selectively patterned in a direction that is perpendicular to an inductor trace of an inductor of the radio frequency circuit. In some embodiments, the ground plane may be selectively patterned to allow an eddy current in the semiconductor package not to flow in opposite direction of a main current in the inductor. In one example, the ground plane may be a portion of the semiconductor package substrate or a die back metallization of the semiconductor die.