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39 条记录 (耗时 0.029 秒)

    Method of producing a semiconductor device
    3.
    发明授权
    Method of producing a semiconductor device 失效
    半导体装置的制造方法

    公开(公告)号：US4315984A

    公开(公告)日：1982-02-16

    申请号：US176799

    申请日：1980-08-11

    申请人： Shinji Okazaki ,  Kozo Mochiji ,  Susumu Takahashi ,  Fumio Murai

    发明人： Shinji Okazaki ,  Kozo Mochiji ,  Susumu Takahashi ,  Fumio Murai

    IPC分类号： H01L21/3213 ,  G03F7/26 ,  H01L21/027 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768 ,  B05D3/06

    CPC分类号： H01L21/7688 ,  H01L21/0272 ,  Y10S438/95 ,  Y10S438/951

    摘要： That region of a resist film in which a contact is to be formed and that region thereof in which an interconnection is to be formed are respectively irradiated with an electron beam in a dose substantially equal to an optimum dose of the resist film and in a dose less than the optimum dose. Thereafter, the resist film is developed.By performing dry etching, an opening extending to a substrate is provided in the region in which the contact is to be formed, and the surface of an insulating film overlying the substrate is exposed in the region in which the interconnection is to be formed.After depositing a conductive metal film on the whole surface the remaining resist film is removed together with the metal film deposited thereon, whereby the contact and the interconnection are formed.

    摘要翻译： 要形成接触的抗蚀剂膜的区域和要形成互连的区域分别以基本上等于抗蚀剂膜的最佳剂量的剂量的电子束和剂量 小于最佳剂量。 之后，形成抗蚀膜。 通过进行干蚀刻，在要形成接触的区域中设置延伸到基板的开口，并且覆盖基板的绝缘膜的表面在要形成互连的区域中露出。 在整个表面上沉积导电金属膜之后，剩余的抗蚀剂膜与沉积在其上的金属膜一起被去除，从而形成接触和互连。

    Electronic beam drawing apparatus
    4.
    发明授权
    Electronic beam drawing apparatus 失效
    电子束描绘装置

    公开(公告)号：US4983864A

    公开(公告)日：1991-01-08

    申请号：US328854

    申请日：1989-03-27

    申请人： Fumio Murai ,  Shinji Okazaki

    发明人： Fumio Murai ,  Shinji Okazaki

    IPC分类号： H01L21/027 ,  H01J37/02 ,  H01J37/248

    CPC分类号： H01J37/026 ,  H01J37/248

    摘要： An electron beam drawing apparatus having a grounded conductor for a screening operation in the neighborhood of a detection surface of a detector to detect a reflected electrons obtained by irradiating an electron onto a specimen and a secondary electron generated through the electron irradiation. The conductor has openings to pass therethrough the reflected electron and the secondary electron. As a result, the electric charge accumulated on an organic substance fixed onto the front surface of the detector through the electron irradiation is prevented from exerting an influence on the drawing electron beam.

    摘要翻译： 一种电子束描绘装置，具有用于在检测器的检测表面附近进行筛选操作的接地导体，以检测通过将电子照射到样本上获得的反射电子和通过电子辐射产生的二次电子。 导体具有通过反射电子和二次电子的开口。 结果，防止了通过电子照射固定在检测器的前表面上的有机物上累积的电荷对绘制电子束的影响。

    Method of forming patterns
    5.
    发明授权
    Method of forming patterns 失效
    形成图案的方法

    公开(公告)号：US4403151A

    公开(公告)日：1983-09-06

    申请号：US250217

    申请日：1981-04-02

    申请人： Kozo Mochiji ,  Yozi Maruyama ,  Shinji Okazaki ,  Fumio Murai

    发明人： Kozo Mochiji ,  Yozi Maruyama ,  Shinji Okazaki ,  Fumio Murai

    IPC分类号： G03F7/039 ,  G03F7/20 ,  H05K3/00 ,  H05K3/06

    CPC分类号： G03F7/7045 ,  G03F7/039 ,  G03F7/2022 ,  H05K3/0082 ,  H05K3/064 ,  Y10S430/143

    摘要： Desired portions of the positive-type photoresist film are irradiated with an electron beam, and regions including at least the regions irradiated with the electron beam are further irradiated with ultraviolet light, followed by developing.The photosensitive radicals are destroyed in the regions which are irradiated with the electron beam. Therefore, the solubility of the photoresist film is not increased even when it is irradiated with ultraviolet light, and resist patterns are formed by developing.

    摘要翻译： 用电子束照射正型光致抗蚀剂膜的所需部分，并且至少使用电子束照射的区域的区域进一步用紫外线照射，然后显影。 在用电子束照射的区域中，感光性基团被破坏。 因此，即使用紫外线照射也不会增加光致抗蚀剂膜的溶解度，并且通过显影形成抗蚀剂图案。

    Electron beam lithography using an aperture having an array of repeated unit patterns
    6.
    发明授权
    Electron beam lithography using an aperture having an array of repeated unit patterns 失效
    使用具有重复单元图案阵列的孔的电子束光刻

    公开(公告)号：US5250812A

    公开(公告)日：1993-10-05

    申请号：US858868

    申请日：1992-03-27

    申请人： Fumio Murai ,  Shinji Okazaki ,  Haruo Yoda ,  Yukinobu Shibata ,  Akira Tsukizoe

    发明人： Fumio Murai ,  Shinji Okazaki ,  Haruo Yoda ,  Yukinobu Shibata ,  Akira Tsukizoe

    IPC分类号： H01J37/317 ,  H01J37/04

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31769 ,  H01J2237/31776

    摘要： An electron beam lithography apparatus is disclosed which has an aperture plate provided with an aperture including an array of repeated unit patterns and an ordinary aperture of a rectangular shape. A region free of the influence of a proximity effect is delineated using the former aperture, and a region affected by the proximity effect is delineated using the latter aperture. The number of repeated unit patterns included in the former aperture is determined considering the number of repeated unit patterns included in a pattern array to be delineated on a substrate. Thereby, the number of electron beam shots is reduced. A plurality of apertures having slightly different aperture widths may be provided for always keeping a pattern line width constant.

    摘要翻译： 公开了一种电子束光刻设备，其具有设置有包括重复单元图案阵列和矩形形状的普通孔径的孔的孔板。 使用前一个孔径来描绘没有接近效应的影响的区域，并且使用后一个孔来描绘受邻近效应影响的区域。 考虑包括在衬底上要描绘的图案阵列中的重复单位图案的数量来确定包括在前一孔径中的重复单位图案的数量。 因此，电子束拍摄的数量减少。 可以提供具有略微不同的孔径宽度的多个孔，以始终保持图案线宽度恒定。

    Exposure method and pattern data preparation system therefor, pattern data preparation method and mask as well as exposure apparatus
    7.
    发明授权
    Exposure method and pattern data preparation system therefor, pattern data preparation method and mask as well as exposure apparatus 失效
    曝光方法和图案数据准备系统，图案数据准备方法和掩模以及曝光装置

    公开(公告)号：US5557314A

    公开(公告)日：1996-09-17

    申请号：US77411

    申请日：1993-06-16

    申请人： Yoshihiko Okamoto ,  Haruo Yoda ,  Ikuo Takada ,  Yukinobu Shibata ,  Akira Hirakawa ,  Norio Saitou ,  Shinji Okazaki ,  Fumio Murai

    发明人： Yoshihiko Okamoto ,  Haruo Yoda ,  Ikuo Takada ,  Yukinobu Shibata ,  Akira Hirakawa ,  Norio Saitou ,  Shinji Okazaki ,  Fumio Murai

    IPC分类号： G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  B41J2/435

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31766 ,  H01J2237/31776

    摘要： Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

    摘要翻译： 通过重复图案和非重复图案的期望图案，可以实现高可靠性的选择性图案曝光。 获得曝光技术以提高图案数据的准备效率并确保孔径图案的检查。 通过本发明，电子束被用作聚焦光束，并且用于传送半导体集成电路等的多个图形的重复图案和非重复图案的批传送系统的图案曝光装置包括用于控制的EB绘图部分 光束和照射光束到样品上，控制I / O部分，绘图控制部分和数据存储部分。 在EB绘图部分中，半导体晶片安装在平台上，并且在从电子束源到舞台的电子束的路径中，安装第一掩模，消隐电极，电子透镜，第一偏转器，第二透镜 偏转器，第二掩模和第三偏转器。

    Charged beam exposure method and apparatus as well as aperture stop and production method thereof
    8.
    发明授权
    Charged beam exposure method and apparatus as well as aperture stop and production method thereof 失效
    充电束曝光方法和装置以及孔径光阑及其制造方法

    公开(公告)号：US5334845A

    公开(公告)日：1994-08-02

    申请号：US613746

    申请日：1990-11-26

    申请人： Hiroaki Wakabayashi ,  Yoshinori Nakayama ,  Fumio Murai ,  Shinji Okazaki

    发明人： Hiroaki Wakabayashi ,  Yoshinori Nakayama ,  Fumio Murai ,  Shinji Okazaki

    IPC分类号： H01J37/317 ,  H01L21/027

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776 ,  H01J2237/31788

    摘要： In an electron beam exposure method for production very high-integration semiconductor devices and its related apparatus in a conventional method, the exposure is divided into fine divisions and carried out by performing a number of shots. However, by utilizing an aperture stop produced by working a single crystalline silicon thin film finely, exposure of a predetermined range is done by one shot. According to the invention, the exposure can be accomplished by the number of shots which is smaller by about two orders than that of the conventional technique and the throughput can be improved remarkably. Since the shot number does not substantially differ depending on whether patterns are complicated or not, individual steps can be processed within substantially identical time.

    摘要翻译： PCT No.PCT / JP90 / 00388 Sec。 371日期1990年11月26日 102（e）1990年11月26日PCT PCT 1990年3月23日PCT公布。 公开号WO90 / 11619 日期为1990年10月4日。在以往的方法中，为了制造非常高集成度的半导体装置及其相关装置的电子束曝光方法，将曝光分割为细分，并进行多次拍摄。 然而，通过利用通过微细加工单晶硅薄膜产生的孔径光阑，通过一次曝光实现预定范围。 根据本发明，曝光可以通过比常规技术小两个点的拍摄次数来实现，并且可以显着地提高吞吐量。 由于根据图案是否复杂，拍摄次数基本上不同，所以可以在大致相同的时间内处理各个步骤。

    Method of manufacturing semiconductor device
    10.
    发明授权
    Method of manufacturing semiconductor device 失效

    公开(公告)号：US06586341B2

    公开(公告)日：2003-07-01

    申请号：US10083417

    申请日：2002-02-27

    申请人： Akemi Moniwa ,  Hiroshi Fukuda ,  Fumio Murai

    发明人： Akemi Moniwa ,  Hiroshi Fukuda ,  Fumio Murai

    IPC分类号： H01L21302

    CPC分类号： G03F1/20 ,  Y10S438/945 ,  Y10S438/95

    摘要： To provide a method of manufacturing a semiconductor device for manufacturing a minute pattern with high accuracy using a stencil mask. An input layout data is classified into rectangles according to pattern width or the like, a boundary is created that divides a periphery or an inside of each classified graphics, an input pattern is fractionized by the boundary, and a complementary mask with fractionized patterns on both sides of the boundary distributed into different layers is used to form a pattern.