公开(公告)号：US20110272700A1

公开(公告)日：2011-11-10

申请号：US13185931

申请日：2011-07-19

申请人： Tetsuji YAMAGUCHI ,  Kengo AKIMOTO ,  Hiroki KAYOIJI ,  Toru TAKAYAMA

发明人： Tetsuji YAMAGUCHI ,  Kengo AKIMOTO ,  Hiroki KAYOIJI ,  Toru TAKAYAMA

IPC分类号： H01L29/786

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.

摘要翻译： 本发明的目的是提供一种薄膜晶体管的制造方法，其能够进行旨在提高栅极绝缘膜的特性的热处理，例如降低界面电平或降低固定电荷，而不会引起不对准的问题 由于玻璃的膨胀或收缩造成图案化。 本发明的薄膜晶体管的制造方法包括以下步骤：在不进行元件隔离的半导体膜上形成至少栅极绝缘膜的状态下进行热处理，同时隔离栅极绝缘膜和 将半导体膜形成为元件结构，形成覆盖露出的半导体膜的侧面的绝缘膜，由此防止半导体膜与栅电极之间的短路。 由于栅极绝缘膜和半导体膜在热处理后同时被加工成元件形状，所以可以防止热处理期间的玻璃基板的膨胀或收缩，从而影响图案中的未对准。

公开(公告)号：US20090195154A1

公开(公告)日：2009-08-06

申请号：US12406223

申请日：2009-03-18

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA ,  Kengo AKIMOTO ,  Gen FUJII ,  Tetsuji YAMAGUCHI

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA ,  Kengo AKIMOTO ,  Gen FUJII ,  Tetsuji YAMAGUCHI

IPC分类号： H01J1/54

CPC分类号： H01L51/529 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/66757 ,  H01L51/5206 ,  H01L51/5246 ,  H01L2251/5315 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

摘要翻译： 本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。 根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。 显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，耐热平面化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁 电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

公开(公告)号：US20120032159A1

公开(公告)日：2012-02-09

申请号：US13277478

申请日：2011-10-20

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA ,  Kengo AKIMOTO ,  Gen FUJII ,  Tetsuji YAMAGUCHI

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA ,  Kengo AKIMOTO ,  Gen FUJII ,  Tetsuji YAMAGUCHI

IPC分类号： H01L51/52

CPC分类号： H01L51/529 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/66757 ,  H01L51/5206 ,  H01L51/5246 ,  H01L2251/5315 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

摘要翻译： 本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。 根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。 显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，在耐热平坦化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁 第一电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

公开(公告)号：US20110095292A1

公开(公告)日：2011-04-28

申请号：US12983538

申请日：2011-01-03

申请人： Toru TAKAYAMA ,  Shunpei YAMAZAKI ,  Kengo AKIMOTO

发明人： Toru TAKAYAMA ,  Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC分类号： H01L29/12

CPC分类号： H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

摘要： An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

摘要翻译： 本发明的目的是将适合作为栅极绝缘膜和保护膜的固化和高质量的绝缘膜应用于在应变点或更低的温度下在玻璃基板上形成绝缘膜的技术， 以及通过使用它实现高效率和高可靠性的半导体器件。 在本发明的半导体器件中，通过氧化硅膜在晶体半导体膜上形成沟道长度为0.35〜2.5μm的场效应晶体管的栅极绝缘膜，其中，硅 氮化物膜含有浓度为1×1021 / cm3以下的氢，相对于含有7.13％的氟化氢铵（NH4HF2）和氟化铵（NH4HF2）的混合溶液，蚀刻速率为10nm /分钟以下的特性 NH4F）为15.4％。

公开(公告)号：US20120273780A1

公开(公告)日：2012-11-01

申请号：US13547377

申请日：2012-07-12

申请人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

发明人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC分类号： H01L29/12

CPC分类号： H01L29/78618 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2201/123 ,  G09G3/3674 ,  G09G2310/0286 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

摘要翻译： 一个实施例是包括反向交错（底栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 电极层。 有意地在源极和漏极电极层与半导体层之间提供具有比半导体层高的载流子浓度的缓冲层，从而形成欧姆接触。

公开(公告)号：US20120256179A1

公开(公告)日：2012-10-11

申请号：US13528009

申请日：2012-06-20

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

摘要翻译： 提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。 晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。 使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。 有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。 通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。 此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

公开(公告)号：US20120241735A1

公开(公告)日：2012-09-27

申请号：US13421038

申请日：2012-03-15

申请人： Tatsuya HONDA ,  Hiroshi KANEMURA ,  Kengo AKIMOTO ,  Suzunosuke HIRAISHI

发明人： Tatsuya HONDA ,  Hiroshi KANEMURA ,  Kengo AKIMOTO ,  Suzunosuke HIRAISHI

IPC分类号： H01L29/22

CPC分类号： H01L29/247 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.

摘要翻译： 提供了具有更稳定的电特性并且基本上由氧化铟锌组成的氧化物半导体膜。 此外，提供了通过使用氧化物半导体膜具有稳定的电特性的高度可靠的半导体器件。 基本上由氧化铟锌组成的氧化物半导体膜具有六边形晶体结构，其中ab平面基本上平行于氧化物半导体膜的表面，并且其中ab平面基本上平行于氧化物表面的菱方晶体结构 半导体膜。

公开(公告)号：US20120138922A1

公开(公告)日：2012-06-07

申请号：US13307398

申请日：2011-11-30

申请人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

发明人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC分类号： H01L29/12

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

摘要翻译： 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US20110318916A1

公开(公告)日：2011-12-29

申请号：US13228486

申请日：2011-09-09

申请人： Kengo AKIMOTO ,  Masashi TSUBUKU

发明人： Kengo AKIMOTO ,  Masashi TSUBUKU

IPC分类号： H01L21/283

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/41733

摘要： An object is to suppress deterioration of element characteristics even when an oxide semiconductor is formed after a gate insulating layer, a source electrode layer, and a drain electrode layer are formed. A gate electrode layer is formed over a substrate. A gate insulating layer is formed over the gate electrode layer. A source electrode layer and a drain electrode layer are formed over the gate insulating layer. Surface treatment is performed on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer which are formed over the substrate. After the surface treatment is performed, an oxide semiconductor layer is formed over the gate insulating layer, the source electrode layer, and the drain electrode layer.

摘要翻译： 即使在形成了栅极绝缘层，源极电极层和漏极电极层之后形成氧化物半导体，也是要抑制元件特性的劣化。 在基板上形成栅极电极层。 在栅电极层上形成栅极绝缘层。 源极电极层和漏电极层形成在栅绝缘层上。 在形成在基板上的栅极绝缘层，源极电极层和漏极电极层的表面上进行表面处理。 在进行表面处理之后，在栅极绝缘层，源极电极层和漏极电极层上形成氧化物半导体层。

公开(公告)号：US20110241132A1

公开(公告)日：2011-10-06

申请号：US13159449

申请日：2011-06-14

申请人： Kengo AKIMOTO

发明人： Kengo AKIMOTO

IPC分类号： H01L29/78

CPC分类号： H01L27/12 ,  H01L27/105 ,  H01L27/11293 ,  H01L27/1214 ,  H01L27/1266

摘要： The semiconductor device includes a thin film transistor; a first interlayer insulating film over the thin film transistor; a first electrode electrically connected to one of a source region and a drain region, over the first interlayer insulating film; a second electrode electrically connected to the other of the source region and the drain region; a second interlayer insulating film formed over the first interlayer insulating film, the first electrode, and the second electrode; a first wiring electrically connected to one of the first electrode and the second electrode, on the second interlayer insulating film; and a second wiring not electrically connected to the other of the first electrode and the second electrode, on the second interlayer insulating film; in which the second wiring is not electrically connected to the other of the first electrode and the second electrode by a separation region formed in the second interlayer insulating film.

摘要翻译： 半导体器件包括薄膜晶体管; 薄膜晶体管上的第一层间绝缘膜; 在所述第一层间绝缘膜上方电连接到源区和漏区之一的第一电极; 电源地连接到所述源极区域和所述漏极区域中的另一个的第二电极; 形成在第一层间绝缘膜，第一电极和第二电极上的第二层间绝缘膜; 在第二层间绝缘膜上电连接到第一电极和第二电极之一的第一布线; 以及在所述第二层间绝缘膜上不与所述第一电极和所述第二电极中的另一个电连接的第二布线; 其中第二布线不通过形成在第二层间绝缘膜中的分离区域而电连接到第一电极和第二电极中的另一个。