公开(公告)号：US5393386A

公开(公告)日：1995-02-28

申请号：US168049

申请日：1993-12-15

申请人： Tetsuo Aoyama ,  Toshio Kondo ,  Yasushi Sugawara ,  Masahiro Miyake

发明人： Tetsuo Aoyama ,  Toshio Kondo ,  Yasushi Sugawara ,  Masahiro Miyake

IPC分类号： C07C209/68 ,  C07C211/63 ,  C25B3/00 ,  C25B3/02

CPC分类号： C07C209/68 ,  C07C211/63 ,  C25B3/00

摘要： The present invention-provides a method for preparing a high-purity aqueous quaternary ammonium hydroxide solution, and there is here disclosed this method for preparing the high-purity aqueous quaternary ammonium hydroxide solution which comprises reacting a quaternary ammonium organic acid salt with hydrogen peroxide, oxygen or an oxygen-containing gas in the presence of a platinum group metal catalyst to produce a quaternary ammonium inorganic acid salt, and then electrolyzing this inorganic acid salt by the use of an electrolytic tank having a cation exchange membrane.

摘要翻译： 本发明提供一种制备高纯度氢氧化季铵水溶液的方法，其中公开了这种制备高纯度季铵氢氧化铵溶液的方法，该方法包括使季铵有机酸盐与过氧化氢反应， 氧或含氧气体在铂族金属催化剂的存在下反应生成季铵无机酸盐，然后通过使用具有阳离子交换膜的电解槽电解该无机酸盐。

公开(公告)号：US5338462A

公开(公告)日：1994-08-16

申请号：US76770

申请日：1993-06-15

申请人： Hisaki Abe ,  Toshio Kondoh ,  Hideki Fukuda ,  Mayumi Takahashi ,  Tetsuo Aoyama ,  Masahiro Miyake

发明人： Hisaki Abe ,  Toshio Kondoh ,  Hideki Fukuda ,  Mayumi Takahashi ,  Tetsuo Aoyama ,  Masahiro Miyake

IPC分类号： B01J20/20 ,  B01J21/18 ,  C01B31/08 ,  C02F1/70 ,  C02F1/72

CPC分类号： C01B31/081 ,  B01J20/20 ,  B01J21/18

摘要： The present invention relates to specific activated carbon materials including from 1 to 5% by weight of nitrogen, from 3 to 30% by weight of oxygen and from 40 to 95% by weight of carbon, and having an average pore radius of from 15 to 30 .ANG., with the proviso that mesopores occupy at least 50% by volume based on the total pore volume, and also relates a process for the preparation thereof, and to the use thereof as catalysts.

摘要翻译： 本发明涉及特定的活性炭材料，其包括1至5重量％的氮，3至30重量％的氧和40至95重量％的碳，并且平均孔半径为15至 30 ANGSTROM，条件是中孔基于总孔体积占据至少50体积％，并且还涉及其制备方法及其作为催化剂的用途。

公开(公告)号：US5242879A

公开(公告)日：1993-09-07

申请号：US805174

申请日：1991-12-11

申请人： Hisaki Abe ,  Toshio Kondoh ,  Hideki Fukuda ,  Mayumi Takahashi ,  Tetsuo Aoyama ,  Masahiro Miyake

发明人： Hisaki Abe ,  Toshio Kondoh ,  Hideki Fukuda ,  Mayumi Takahashi ,  Tetsuo Aoyama ,  Masahiro Miyake

IPC分类号： B01J20/20 ,  B01J21/18 ,  C01B31/08

CPC分类号： C01B31/081 ,  B01J20/20 ,  B01J21/18

摘要： The present invention relates to specific activated carbon materials including from 1 to 5% by weight of nitrogen, from 3 to 30% by weight of oxygen and from 40 to 95% by weight of carbon, and having an average pore radius of from 15 to 30 .ANG., with the proviso that mesopores occupy at least 50% by volume based on the total pore volume, and also relates a process for the preparation thereof, and to the use thereof as catalysts.

公开(公告)号：US5174816A

公开(公告)日：1992-12-29

申请号：US704342

申请日：1991-05-23

申请人： Tetsuo Aoyama ,  Mayumi Takahashi ,  Toshio Kondo ,  Hideki Fukuda

发明人： Tetsuo Aoyama ,  Mayumi Takahashi ,  Toshio Kondo ,  Hideki Fukuda

IPC分类号： C23F11/14 ,  C23G1/18 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522

CPC分类号： H01L21/02071 ,  C23F11/10 ,  C23F11/122 ,  H01L21/32134

摘要： A surface treating agent for an aluminum line pattern substrate is disclosed, comprising an aqueous solution containing 0.01 to 15% by weight of quaternary ammonium hydroxide represented by the general formula: ##STR1## wherein R is an alkyl group having 1 to 3 carbon atoms, or a hydroxy-substituted alkyl group having 1 to 3 carbon atoms, and R.sup.1, R.sup.2 and R.sup.3 are independently an alkyl group having 1 to 3 carbon atoms, and 0.1 to 20% by weight of sugar or sugar alcohol. This agent can inhibit the after-corrosion of aluminum effectively.

公开(公告)号：US20090099051A1

公开(公告)日：2009-04-16

申请号：US12173352

申请日：2008-07-15

申请人： Tetsuo Aoyama ,  Toshitaka Hiraga ,  Tomoko Suzuki

发明人： Tetsuo Aoyama ,  Toshitaka Hiraga ,  Tomoko Suzuki

IPC分类号： C11D7/32

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/263 ,  C11D7/28 ,  C11D7/3218 ,  C11D7/3263 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76814

摘要： The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.

摘要翻译： 本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。 根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。

公开(公告)号：US07341827B2

公开(公告)日：2008-03-11

申请号：US10640389

申请日：2003-08-14

申请人： Masafumi Muramatsu ,  Hayato Iwamoto ,  Kazumi Asada ,  Tomoko Suzuki ,  Toshitaka Hiraga ,  Tetsuo Aoyama

发明人： Masafumi Muramatsu ,  Hayato Iwamoto ,  Kazumi Asada ,  Tomoko Suzuki ,  Toshitaka Hiraga ,  Tetsuo Aoyama

IPC分类号： G03F7/26

CPC分类号： H01L21/32136 ,  G03F7/423 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76838

摘要： One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask. It can propose a separation-material composition for a photo-resist such that the photo-resist residuals and the by-product polymer are easily removed after a dry etching process and at the same time the low dielectric-constant insulation film is avoided from erosion and oxidization.

摘要翻译： 根据本发明的用于光刻胶的分离材料组合物的一个实例包括5.0重量％的氨基磺酸，34.7重量％的H 2 O 3，0.3重量％的1位氢氟酸铵 ，30重量％的N，N-二甲基乙酰胺和30重量％的二甘醇单正丁醚。 根据本发明的用于光致抗蚀剂的分离材料组合物的另一个实例包括1-羟基亚乙基-1.3.0重量％的1-二膦酸，0.12重量％的氟化铵，48.38重量％的H 2 O和48.5重量％的二甘醇单正丁基醚。 用于光刻胶的分离材料组合物主要用于医用液体洗涤液/科学液体，以便在光刻胶掩模的灰化过程之后除去光致抗蚀剂残留物和副产物聚合物。 可以提出用于光刻胶的分离材料组合物，使得光刻胶残留物和副产物聚合物在干蚀刻工艺之后容易除去，同时避免了低介电常数绝缘膜侵蚀 和氧化。

公开(公告)号：US06875288B2

公开(公告)日：2005-04-05

申请号：US09971589

申请日：2001-10-09

申请人： Hideto Gotoh ,  Takayuki Niuya ,  Hiroyuki Mori ,  Hiroshi Matsunaga ,  Fukusaburo Ishihara ,  Yoshiya Kimura ,  Ryuji Sotoaka ,  Takuya Goto ,  Tetsuo Aoyama ,  Kojiro Abe

发明人： Hideto Gotoh ,  Takayuki Niuya ,  Hiroyuki Mori ,  Hiroshi Matsunaga ,  Fukusaburo Ishihara ,  Yoshiya Kimura ,  Ryuji Sotoaka ,  Takuya Goto ,  Tetsuo Aoyama ,  Kojiro Abe

IPC分类号： B08B3/08 ,  B08B3/00 ,  C11D1/00 ,  C11D3/32 ,  C11D3/34 ,  C11D3/43 ,  C11D11/00 ,  C11D17/08 ,  H01L21/02 ,  H01L21/304 ,  H01L21/311 ,  H01L21/461

CPC分类号： B08B3/08 ,  B08B3/048 ,  C11D3/43 ,  C11D11/0064 ,  H01L21/02063 ,  H01L21/31133

摘要： The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

摘要翻译： 上述清洗剂包括表面活性剂和有机溶剂，上述清洗方法的特征在于允许上述清洗剂以高速流动在待处理材料的表面上，从而清洁上述表面。 根据本发明，能够容易地除去附着在待处理材料的表面上的沉积物，而不损害被处理材料。

公开(公告)号：US06458517B2

公开(公告)日：2002-10-01

申请号：US09536643

申请日：2000-03-28

申请人： Masahiro Nohara ,  Yukihiko Takeuchi ,  Hisaki Abe ,  Taketo Maruyama ,  Tetsuo Aoyama

发明人： Masahiro Nohara ,  Yukihiko Takeuchi ,  Hisaki Abe ,  Taketo Maruyama ,  Tetsuo Aoyama

IPC分类号： G03F742

CPC分类号： G03F7/425

摘要： A photoresist stripping composition comprises (1) a nitrogen-containing organohydroxyl compound, (2) an alkylene glycol monoalkyl ether represented by the general formula: HO—(CpH2pO)q—R, wherein R is C1-C4 alkyl, p is 2 or 3, and q is 1, 2 or 3, (3) sugar or sugar alcohol, (4) a phosphorus-containing compound and (5) water. The photoresist stripping composition easily removes photoresist films on the inorganic substrate, and patterned photoresist films and photoresist residues remaining after etching and photoresist residues in a short period of time without corroding semiconductive materials, circuit-forming materials, insulating materials, etc.

摘要翻译： 光致抗蚀剂剥离组合物包含（1）含氮有机羟基化合物，（2）由通式HO-（CpH2pO）qR表示的亚烷基二醇单烷基醚，其中R是C 1 -C 4烷基，p是2或3， 和q为1,2或3，（3）糖或糖醇，（4）含磷化合物和（5）水。 光致抗蚀剂剥离组合物容易地除去无机基材上的光致抗蚀剂膜，蚀刻后剩余的图案化光致抗蚀剂膜和光致抗蚀剂残留物在短时间内不腐蚀半导体材料，电路形成材料，绝缘材料等。

公开(公告)号：US4224243A

公开(公告)日：1980-09-23

申请号：US49604

申请日：1979-06-18

申请人： Tetsuo Aoyama ,  Shigeru Horie ,  Kozo Sano ,  Hidetaka Kiga ,  Kinichi Mizuno ,  Takeo Ikarashi

发明人： Tetsuo Aoyama ,  Shigeru Horie ,  Kozo Sano ,  Hidetaka Kiga ,  Kinichi Mizuno ,  Takeo Ikarashi

IPC分类号： C07B61/00 ,  B01J21/00 ,  B01J23/00 ,  B01J27/00 ,  B01J31/00 ,  C07C67/00 ,  C07C231/00 ,  C07C231/08 ,  C07C231/10 ,  C07C233/00 ,  C07C233/03 ,  C07C102/00 ,  C07C103/36

CPC分类号： C07C231/00 ,  C07C233/00

摘要： Dimethyl formamide with a high purity is produced in a high yield and a high selectivity by reaction of a mixture of monomethylamine and/or monomethyl formamide and trimethylamine, or the mixture further containing dimethylamine with carbon monoxide in the presence of metallic iron or an iron compound as a catalyst and hydrogen gas at a volumic rate of H.sub.2 /CO of 0.05-3.

摘要翻译： 通过一元胺和/或单甲基甲酰胺和三甲胺的混合物或进一步含有二甲胺与一氧化碳的混合物在金属铁或铁化合物的存在下反应，以高产率和高选择性产生高纯度的二甲基甲酰胺 作为催化剂和H2 / CO的体积比为0.05-3的氢气。

公开(公告)号：US06462005B1

公开(公告)日：2002-10-08

申请号：US08369215

申请日：1995-01-05

申请人： Hideto Gotoh ,  Tetsuo Aoyama ,  Rieko Nakano ,  Hideki Fukuda

发明人： Hideto Gotoh ,  Tetsuo Aoyama ,  Rieko Nakano ,  Hideki Fukuda

IPC分类号： C11D162

CPC分类号： H01L21/02071 ,  G03F7/425 ,  H01L21/02052

摘要： A cleaning agent for use in the manufacture of a semiconductor device comprising an aqueous solution containing a quarternary ammonium salt and a fluoro compound, or an aqueous solution containing a quarternary ammonium salt and a fluoro compound, as well as an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. In the semiconductor device manufacturing process, after forming a mask with a photoresist, a wiring structure is formed by dry etching of a conductive layer, wherein a protecting deposition film has been formed on side walls of the conductive layer. Use of the cleaning agent enables the protecting deposition film to be removed in a highly reliable manner with the surface of the conductive layer being decontaminated and cleaned such that no corrosion of the conductive layer occurs.

摘要翻译： 一种用于制造半导体器件的清洁剂，其包含含有季铵盐和氟化合物的水溶液，或含有季铵盐和氟化合物的水溶液，以及选自下组的有机溶剂 由酰胺，内酯，腈，醇和酯组成。 在半导体器件制造方法中，在用光致抗蚀剂形成掩模之后，通过干蚀刻导电层形成布线结构，其中在导电层的侧壁上形成保护沉积膜。 使用清洁剂能够以高度可靠的方式去除保护性沉积膜，同时导电层的表面被净化和清洁，使得不会发生导电层的腐蚀。