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    Capacitance type acceleration sensor
    1.
    发明授权
    Capacitance type acceleration sensor 有权
    电容式加速度传感器

    公开(公告)号：US07107846B2

    公开(公告)日：2006-09-19

    申请号：US11265281

    申请日：2005-11-03

    申请人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

    发明人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817

    摘要： A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

    摘要翻译： 电容型加速度传感器包括半导体基板，通过弹簧部分支撑在基板上的重量部分，与重物部分一体化的可动电极以及与该基板悬臂连接的固定电极。 根据加速度，可移动电极与可动电极的相对表面一起移动。 可动电极的相对表面面对固定电极的相对表面，以提供电容器。 电容器的电容根据可动电极的位移而变化，使得外部电路作为电容变化来检测加速度。 可移动和固定电极的每个相对表面具有用于增加电容变化的凹凸部分。

    Capacitance type acceleration sensor
    2.
    发明授权
    Capacitance type acceleration sensor 有权

    公开(公告)号：US07004026B2

    公开(公告)日：2006-02-28

    申请号：US10703461

    申请日：2003-11-10

    申请人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

    发明人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817

    摘要： A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

    Capacitance type acceleration sensor
    3.
    发明申请
    Capacitance type acceleration sensor 有权

    公开(公告)号：US20060053890A1

    公开(公告)日：2006-03-16

    申请号：US11265281

    申请日：2005-11-03

    申请人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

    发明人： Kazuhiko Kano ,  Tetsuo Yoshioka ,  Takao Iwaki ,  Yukihiro Takeuchi

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817

    摘要： A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

    Capacitance type dynamical quantity sensor
    4.
    发明授权
    Capacitance type dynamical quantity sensor 失效
    电容式动力传感器

    公开(公告)号：US06909158B2

    公开(公告)日：2005-06-21

    申请号：US10703460

    申请日：2003-11-10

    申请人： Tetsuo Yoshioka ,  Yukihiro Takeuchi ,  Kazuhiko Kano

    发明人： Tetsuo Yoshioka ,  Yukihiro Takeuchi ,  Kazuhiko Kano

    IPC分类号： G01P15/125 ,  H01L29/84 ,  H01L27/00

    CPC分类号： G01P15/125 ,  G01P2015/0814

    摘要： A capacitance type dynamical quantity sensor includes a semiconductor substrate, a weight portion being displaced in accordance with a dynamical quantity, a movable electrode integrated with the weight portion, and a fixed electrode facing the movable electrode. The movable electrode and the fixed electrode provide a capacitor having a capacitance. The movable electrode is movable in accordance with the dynamical quantity. The capacitance of capacitor is changed in accordance with a displacement of the movable electrode so that the dynamical quantity as the capacitance change is measured with an outer circuit. The facing surface of the movable electrode facing the fixed electrode has a substantially rectangular shape, and an aspect ratio of the facing surface is in a range between 0.1 and 10.

    摘要翻译： 电容型动力传感器包括半导体衬底，根据动力位移的重量部分，与重量部分一体化的可动电极和面对可动电极的固定电极。 可动电极和固定电极提供具有电容的电容器。 可移动电极可根据动态量移动。 电容器的电容根据可动电极的位移而变化，从而以外部电路测量作为电容变化的动力学量。 面对固定电极的可动电极的面对面具有大致矩形形状，并且面对面的纵横比在0.1和10之间的范围内。

    Capacitance type physical quantity sensor
    5.
    发明授权
    Capacitance type physical quantity sensor 有权
    电容式物理量传感器

    公开(公告)号：US07201053B2

    公开(公告)日：2007-04-10

    申请号：US10834183

    申请日：2004-04-29

    申请人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

    发明人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

    IPC分类号： G01P15/125 ,  G01P9/04

    CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

    摘要翻译： 电容式物理量传感器检测物理量。 传感器包括可移动部分，其包括可动电极和包括固定电极的固定部分。 固定电极包括面向可动电极的检测面的检测面。 可移动电极可以根据物理量朝向固定电极移动，使得检测表面之间的距离是可变的。 可移动和固定电极中的至少一个包括凹槽。 凹槽设置在可移动和固定电极中的一个的顶部或底部上，具有从顶部或底部的预定深度，并且从检测表面延伸到相对的表面。

    Semiconductor sensor method
    8.
    发明授权
    Semiconductor sensor method 失效
    半导体传感器方法

    公开(公告)号：US5587343A

    公开(公告)日：1996-12-24

    申请号：US401044

    申请日：1995-03-08

    申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

    发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

    IPC分类号： G01L1/18 ,  G01L1/22 ,  G01P15/08 ,  G01P15/12 ,  H01L21/28 ,  H01L29/51 ,  H01L29/84 ,  H01L21/00 ,  B44C1/22

    CPC分类号： H01L21/28238 ,  G01P15/0802 ,  G01P15/124 ,  H01L29/51 ,  H01L29/84 ,  G01P2015/0828

    摘要： A method for fabricating a semiconductor sensor wherein deflection of a movable member is disclosed. A silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the silicon oxide film by means of a low-pressured chemical vapor deposition process. At this time, silane is caused to flow into an oven, and the supply of silane is stopped when a layer of polycrystalline silicon has been deposited on the silicon substrate, and a first polycrystalline silicon layer is formed. By means of stopping the supply of silane, a silicon oxide layer of a thickness of several angstroms to several tens of angstroms is formed on the first polycrystalline silicon layer by atmosphere O.sub.2. A second polycrystalline silicon layer of a thickness of 1 .mu.m is formed on the silicon oxide layer by means of causing silane to flow into the oven. Patterning by dry etching or the like through a photo-lithographic process is performed to form a movable member. The silicon oxide film below the movable member is then etched.

    摘要翻译： 一种制造半导体传感器的方法，其中公开了可移动部件的偏转。 在硅基板上形成氧化硅膜，通过低压化学气相沉积工艺在氧化硅膜上形成由多晶硅构成的可动部件。 此时，使硅烷流入烘箱，当在硅衬底上沉积多晶硅层时，停止供给硅烷，形成第一多晶硅层。 通过停止硅烷的供给，通过气氛O2在第一多晶硅层上形成厚度为几埃至数十埃的氧化硅层。 通过使硅烷流入烘箱中，在氧化硅层上形成厚度为1μm的第二多晶硅层。 进行通过光刻法的干蚀刻等的图案化，形成可动部件。 然后蚀刻可动件下方的氧化硅膜。

    Semiconductor acceleration sensor with source and drain regions
    10.
    发明授权
    Semiconductor acceleration sensor with source and drain regions 失效
    具有源极和漏极区域的半导体加速度传感器

    公开(公告)号：US5627397A

    公开(公告)日：1997-05-06

    申请号：US402949

    申请日：1995-03-13

    申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

    发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

    IPC分类号： G01P1/00 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/124 ,  G01P1/006 ,  Y10S73/01

    摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.

    摘要翻译： 根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。 在该检测中使用两个晶体管结构。 一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。 此时，另一晶体管结构中的固定电极之间的电流降低。 这两个晶体管结构靠近地设置。 通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。