公开(公告)号：US06881660B2

公开(公告)日：2005-04-19

申请号：US10328170

申请日：2002-12-26

申请人： Takeshi Harada ,  Hideaki Yoshida ,  Tetsuya Ueda ,  Masashi Hamanaka

发明人： Takeshi Harada ,  Hideaki Yoshida ,  Tetsuya Ueda ,  Masashi Hamanaka

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： After a plurality of grooves are formed in an insulating film, a barrier metal film and a conductive film are deposited successively on the insulating film such that each of the grooves is filled completely therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, a foreign matter adhered to the surface to be polished during polishing is removed and then a surface of the insulating film is polished.

摘要翻译： 在绝缘膜中形成多个沟槽之后，在绝缘膜上依次沉积阻挡金属膜和导电膜，使得每个槽完全填充。 随后，通过研磨去除沟槽外部的导电膜的部分，然后通过抛光除去槽外部的阻挡金属膜的部分。 此后，除去在抛光期间附着于抛光表面的异物，然后抛光绝缘膜的表面。

公开(公告)号：US06858549B2

公开(公告)日：2005-02-22

申请号：US10328178

申请日：2002-12-26

申请人： Masashi Hamanaka ,  Takeshi Harada ,  Hideaki Yoshida ,  Tetsuya Ueda

发明人： Masashi Hamanaka ,  Takeshi Harada ,  Hideaki Yoshida ,  Tetsuya Ueda

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76832 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/7684 ,  Y10S438/906

摘要： After a plurality of grooves are formed in an insulating film and in an antireflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the grooves is filled. Subsequently, the portions of the conductive film outside the grooves are removed by a first polishing step and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, foreign matter adhered to the surface of the anti-reflection film is removed and a third polishing step is conducted on the surface of the anti-reflection film using an abrasive agent of the same type as used in the first polishing step of the conductive film.

摘要翻译： 在绝缘膜和绝缘膜上的防反射膜中形成多个沟槽之后，在抗反射膜上沉积阻挡金属膜和导电膜，使得每个沟槽被填充。 随后，通过第一抛光步骤去除沟槽外部的导电膜的部分，然后通过抛光去除凹槽外部的阻挡金属膜的部分。 此后，去除附着在防反射膜表面上的异物，并且使用与导电的第一抛光步骤中使用的相同类型的研磨剂在抗反射膜的表面上进行第三抛光步骤 电影。

公开(公告)号：US06919267B2

公开(公告)日：2005-07-19

申请号：US10328175

申请日：2002-12-26

申请人： Tetsuya Ueda ,  Masashi Hamanaka ,  Takeshi Harada ,  Hideaki Yoshida

发明人： Tetsuya Ueda ,  Masashi Hamanaka ,  Takeshi Harada ,  Hideaki Yoshida

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/7684 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212

摘要： After a plurality of grooves are formed in an insulating film and in an anti-reflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the grooves is filled therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, respective foreign matters adhered to a polishing pad and to a surface to be polished during polishing are removed and then a surface of the anti-reflection film is polished.

摘要翻译： 在绝缘膜和绝缘膜上的防反射膜中形成多个沟槽之后，在防反射膜上沉积阻挡金属膜和导电膜，使得每个槽被填充。 随后，通过研磨去除沟槽外部的导电膜的部分，然后通过抛光除去槽外部的阻挡金属膜的部分。 此后，除去在抛光时附着于抛光垫和抛光表面的各异物，然后抛光防反射膜的表面。

公开(公告)号：US06759322B2

公开(公告)日：2004-07-06

申请号：US10328171

申请日：2002-12-26

申请人： Hideaki Yoshida ,  Tetsuya Ueda ,  Masashi Hamanaka ,  Takeshi Harada

发明人： Hideaki Yoshida ,  Tetsuya Ueda ,  Masashi Hamanaka ,  Takeshi Harada

IPC分类号： H01L214763

CPC分类号： H01L21/76832 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/7684 ,  Y10S438/906 ,  Y10S438/952 ,  Y10S438/959

摘要： After a plurality of grooves are formed in an insulating film and in an anti-reflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the wiring grooves is filled therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the wiring are removed by polishing. Thereafter, a foreign matter adhered to a surface to be polished during polishing is removed and then a surface of the anti-reflection film is polished.

摘要翻译： 在绝缘膜和绝缘膜上的抗反射膜中形成多个沟槽之后，在防反射膜上沉积阻挡金属膜和导电膜，使得每个布线槽被填充。 随后，通过研磨去除沟槽外部的导电膜的部分，然后通过抛光除去布线外部的阻挡金属膜的部分。 此后，除去在抛光期间附着于抛光表面的异物，然后抛光抗反射膜的表面。

公开(公告)号：US08669833B2

公开(公告)日：2014-03-11

申请号：US13375945

申请日：2010-06-03

申请人： Tetsuya Ueda

发明人： Tetsuya Ueda

IPC分类号： H01P1/205 ,  H01P7/10

CPC分类号： H01P7/10 ,  G02B1/002 ,  G02B5/3058 ,  H01P1/20 ,  H01P1/2084

摘要： In a metamaterial, a dielectric layer includes a host medium and dielectric bodies disposed in rows with predetermined intervals therebetween is sandwiched between a pair of conductive mesh plates each having holes, thereby forming a functional layer including dielectric resonators corresponding to the dielectric bodies. The metamaterial is configured by laminating the functional layers. The holes and the dielectric resonators are positioned coaxially and an electromagnetic wave is propagated in each of the functional layers in a propagation direction perpendicular to a multi-layered laminate surface such that the metamaterial function as a left-handed metamaterial in relation to the propagation direction perpendicular to the multi-layered surface.

摘要翻译： 在超材料中，电介质层包括主介体，并且以一定间隔设置成行的电介质体夹在一对具有孔的导电网板之间，从而形成包括对应于介电体的介电谐振器的功能层。 超材料通过层压功能层而构成。 孔和介质谐振器同轴地定位，并且电磁波在垂直于多层叠层表面的传播方向上在每个功能层中传播，使得超材料相对于传播方向作为左旋超材料 垂直于多层表面。

公开(公告)号：US08294538B2

公开(公告)日：2012-10-23

申请号：US12530102

申请日：2008-03-05

申请人： Tetsuya Ueda

发明人： Tetsuya Ueda

IPC分类号： H01P3/08

CPC分类号： H01Q1/38 ,  H01P1/203 ,  H01P1/207 ,  H01P1/32 ,  H01Q13/206

摘要： A transmission line microwave apparatus includes at least one nonreciprocal transmission line part, which includes a series branch circuit equivalently including a capacitive element and a shunt branch circuit equivalently including an inductive element. The nonreciprocal transmission line part has gyrotropic characteristic by being magnetized in a magnetization direction different from the propagation direction of a microwave, and has an asymmetric structure to a plane formed by the propagation direction and the magnetization direction. The nonreciprocal transmission line part has a propagation constant and an operating frequency set in a dispersion curve that represents a relation between the propagation constant and the operating frequency so that the propagation constant in the forward direction and the propagation constant in the backward direction have nonreciprocal phase characteristics different from each other. A microwave transmission line is constituted by cascade-connecting at least one non-reciprocal transmission line part between first and second ports.

摘要翻译： 传输线微波装置包括至少一个不可逆传输线部分，其包括等效地包括电容元件的串联分支电路和等效地包括电感元件的分流分支电路。 不可逆传输线部分通过在与微波的传播方向不同的磁化方向上磁化而具有陀螺特性，并且具有与由传播方向和磁化方向形成的平面不对称的结构。 不可逆传输线部分具有传播常数和在表示传播常数与工作频率之间的关系的色散曲线中设定的工作频率，使得正向传播常数和反向传播常数具有非相互相位 特征彼此不同。 微波传输线通过级联连接第一和第二端口之间的至少一个不可逆传输线部分而构成。

公开(公告)号：US08034707B2

公开(公告)日：2011-10-11

申请号：US12897416

申请日：2010-10-04

申请人： Tetsuya Ueda

发明人： Tetsuya Ueda

IPC分类号： H01L21/4763

CPC分类号： H01L21/76801 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device includes the steps of forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一绝缘膜中间隔地形成多个下互连; 去除位于下互连之间的第一绝缘膜的一部分，从而形成互连互连间隙; 在所述第一绝缘膜上形成第二绝缘膜，其中所述下互连和互连互连间隙形成为使得从所述互连互连间隙形成气隙; 以及在所述第二绝缘膜中形成连接到所述下部互连中的一个的连接部分和连接到所述连接部分的上部互连件。 连接部分形成为连接到不邻近气隙的下互连中的一个。

公开(公告)号：US07622807B2

公开(公告)日：2009-11-24

申请号：US12277933

申请日：2008-11-25

申请人： Tetsuya Ueda

发明人： Tetsuya Ueda

IPC分类号： H01L29/40

CPC分类号： H01L21/76801 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device includes the steps of: forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一绝缘膜中间隔地形成多个下互连; 去除位于下互连之间的第一绝缘膜的一部分，从而形成互连互连间隙; 在所述第一绝缘膜上形成第二绝缘膜，其中所述下互连和互连互连间隙形成为使得从所述互连互连间隙形成气隙; 以及在所述第二绝缘膜中形成连接到所述下部互连中的一个的连接部分和连接到所述连接部分的上部互连件。 连接部分形成为连接到不邻近气隙的下互连中的一个。

公开(公告)号：US07265450B2

公开(公告)日：2007-09-04

申请号：US10900272

申请日：2004-07-28

申请人： Takato Handa ,  Hiroyuki Umimoto ,  Tetsuya Ueda

发明人： Takato Handa ,  Hiroyuki Umimoto ,  Tetsuya Ueda

IPC分类号： H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76801 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An inventive semiconductor device includes: a lower interlayer dielectric film provided on a substrate; a lower interconnect made up of a lower barrier metal layer formed along a wall surface of a lower interconnect groove in the lower interlayer dielectric film, and a copper film; and an upper plug and an upper interconnect. The upper plug passes through a silicon nitride film and comes into contact with the copper film of the lower interconnect. The lower interconnect is provided with a large number of convex portions buried in concave portions of the lower interconnect groove. Thus, voids in the lower interconnect are also gettered by the convex portions. Accordingly, the concentration of voids in the contact area between the lower interconnect and the upper plug is relieved, and an increase in contact resistance is suppressed.

摘要翻译： 本发明的半导体器件包括：设置在基板上的下层间绝缘膜; 由沿下层间电介质膜的下互连槽的壁面形成的下阻挡金属层和铜膜构成的下互连件; 以及上部插头和上部互连件。 上塞通过氮化硅膜并与下互连的铜膜接触。 下部互连件设置有埋在下部互连槽的凹部中的大量凸部。 因此，下部互连件中的空隙也被凸起部分吸收。 因此，下部布线和上部插塞之间的接触区域中的空隙的浓度被释放，并且抑制了接触电阻的增加。

公开(公告)号：US06972119B2

公开(公告)日：2005-12-06

申请号：US10168854

申请日：2000-12-27

申请人： Kiyoshi Taguchi ,  Takeshi Tomizawa ,  Kunihiro Ukai ,  Toshiyuki Shono ,  Koichiro Kitagawa ,  Tetsuya Ueda ,  Seiji Fujihara ,  Yutaka Yoshida

发明人： Kiyoshi Taguchi ,  Takeshi Tomizawa ,  Kunihiro Ukai ,  Toshiyuki Shono ,  Koichiro Kitagawa ,  Tetsuya Ueda ,  Seiji Fujihara ,  Yutaka Yoshida

IPC分类号： B01J8/04 ,  B01J19/24 ,  B01J23/40 ,  B01J23/63 ,  B01J23/72 ,  B01J35/00 ,  C01B3/16 ,  C01B3/48 ,  C01B3/58 ,  C10K3/04 ,  H01M8/06 ,  B01J3/00

CPC分类号： H01M8/0631 ,  B01J8/0453 ,  B01J8/0457 ,  B01J8/0488 ,  B01J8/0496 ,  B01J19/2485 ,  B01J23/40 ,  B01J23/63 ,  B01J23/72 ,  B01J35/0006 ,  B01J2208/00061 ,  B01J2208/00194 ,  B01J2208/00504 ,  B01J2208/00716 ,  B01J2219/0004 ,  B01J2219/00198 ,  B01J2219/002 ,  B01J2219/00202 ,  B01J2219/00213 ,  B01J2219/00231 ,  C01B3/16 ,  C01B3/48 ,  C01B3/583 ,  C01B3/586 ,  C01B2203/0233 ,  C01B2203/0283 ,  C01B2203/0288 ,  C01B2203/044 ,  C01B2203/0445 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/0811 ,  C01B2203/0816 ,  C01B2203/085 ,  C01B2203/0866 ,  C01B2203/0877 ,  C01B2203/0883 ,  C01B2203/0894 ,  C01B2203/1023 ,  C01B2203/1041 ,  C01B2203/1064 ,  C01B2203/107 ,  C01B2203/1076 ,  C01B2203/1082 ,  C01B2203/1223 ,  C01B2203/1241 ,  C01B2203/1247 ,  C01B2203/1604 ,  C01B2203/1609 ,  C01B2203/1619 ,  C01B2203/1661 ,  C01B2203/169 ,  C01B2203/1695 ,  C01B2203/82 ,  C10K3/04 ,  Y02P20/52

摘要： A hydrogen producing apparatus comprising: a reforming section having a reforming catalyst which causes a reaction between a carbon-containing organic compound as a feedstock and water; a feedstock supply section for supplying the feedstock to the reforming section; a water supply section for supplying water to the reforming section; a heating section for heating the reforming catalyst; a shifting section having a shift catalyst which causes a shift reaction between carbon monoxide and water contained in a reformed gas supplied from the reforming section; and a purifying section having a purifying catalyst which causes oxidation or methanation of carbon monoxide contained in a gas supplied from the shifting section, wherein the shift catalyst comprises a platinum group metal and a metal oxide.

摘要翻译： 一种制氢装置，其特征在于，包括：重整部，其具有使作为原料的含碳有机化合物与水发生反应的重整催化剂; 原料供给部，用于将原料供给至重整部; 供水部，其向所述重整部供给水; 用于加热所述重整催化剂的加热部分; 具有变换催化剂的换档部分，其引起从重整部分供应的重整气体中包含的一氧化碳和水之间的转化反应; 以及净化部，其具有使从所述变速部供给的气体中含有的一氧化碳发生氧化或甲烷化的净化催化剂，所述变换催化剂含有铂族金属和金属氧化物。