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公开(公告)号：US06881660B2
公开(公告)日：2005-04-19
申请号：US10328170
申请日：2002-12-26
IPC分类号： H01L21/02 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/4763
CPC分类号： H01L23/53238 , H01L21/02074 , H01L21/31053 , H01L21/3212 , H01L21/7684 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： After a plurality of grooves are formed in an insulating film, a barrier metal film and a conductive film are deposited successively on the insulating film such that each of the grooves is filled completely therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, a foreign matter adhered to the surface to be polished during polishing is removed and then a surface of the insulating film is polished.
摘要翻译： 在绝缘膜中形成多个沟槽之后，在绝缘膜上依次沉积阻挡金属膜和导电膜，使得每个槽完全填充。 随后，通过研磨去除沟槽外部的导电膜的部分，然后通过抛光除去槽外部的阻挡金属膜的部分。 此后，除去在抛光期间附着于抛光表面的异物，然后抛光绝缘膜的表面。
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公开(公告)号：US06858549B2
公开(公告)日：2005-02-22
申请号：US10328178
申请日：2002-12-26
IPC分类号： H01L21/02 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76832 , H01L21/02074 , H01L21/31053 , H01L21/3212 , H01L21/76801 , H01L21/76807 , H01L21/7684 , Y10S438/906
摘要： After a plurality of grooves are formed in an insulating film and in an antireflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the grooves is filled. Subsequently, the portions of the conductive film outside the grooves are removed by a first polishing step and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, foreign matter adhered to the surface of the anti-reflection film is removed and a third polishing step is conducted on the surface of the anti-reflection film using an abrasive agent of the same type as used in the first polishing step of the conductive film.
摘要翻译： 在绝缘膜和绝缘膜上的防反射膜中形成多个沟槽之后，在抗反射膜上沉积阻挡金属膜和导电膜，使得每个沟槽被填充。 随后，通过第一抛光步骤去除沟槽外部的导电膜的部分，然后通过抛光去除凹槽外部的阻挡金属膜的部分。 此后，去除附着在防反射膜表面上的异物，并且使用与导电的第一抛光步骤中使用的相同类型的研磨剂在抗反射膜的表面上进行第三抛光步骤 电影。
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公开(公告)号：US06919267B2
公开(公告)日：2005-07-19
申请号：US10328175
申请日：2002-12-26
IPC分类号： H01L21/02 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/7684 , H01L21/02074 , H01L21/31053 , H01L21/3212
摘要： After a plurality of grooves are formed in an insulating film and in an anti-reflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the grooves is filled therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, respective foreign matters adhered to a polishing pad and to a surface to be polished during polishing are removed and then a surface of the anti-reflection film is polished.
摘要翻译： 在绝缘膜和绝缘膜上的防反射膜中形成多个沟槽之后，在防反射膜上沉积阻挡金属膜和导电膜，使得每个槽被填充。 随后，通过研磨去除沟槽外部的导电膜的部分，然后通过抛光除去槽外部的阻挡金属膜的部分。 此后，除去在抛光时附着于抛光垫和抛光表面的各异物，然后抛光防反射膜的表面。
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公开(公告)号：US06759322B2
公开(公告)日：2004-07-06
申请号：US10328171
申请日：2002-12-26
IPC分类号： H01L214763
CPC分类号： H01L21/76832 , H01L21/02074 , H01L21/31053 , H01L21/31144 , H01L21/3212 , H01L21/76807 , H01L21/7684 , Y10S438/906 , Y10S438/952 , Y10S438/959
摘要： After a plurality of grooves are formed in an insulating film and in an anti-reflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the wiring grooves is filled therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the wiring are removed by polishing. Thereafter, a foreign matter adhered to a surface to be polished during polishing is removed and then a surface of the anti-reflection film is polished.
摘要翻译： 在绝缘膜和绝缘膜上的抗反射膜中形成多个沟槽之后，在防反射膜上沉积阻挡金属膜和导电膜，使得每个布线槽被填充。 随后，通过研磨去除沟槽外部的导电膜的部分，然后通过抛光除去布线外部的阻挡金属膜的部分。 此后，除去在抛光期间附着于抛光表面的异物，然后抛光抗反射膜的表面。
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5.发明授权公开(公告)号：US08775051B2
公开(公告)日：2014-07-08
申请号：US13096344
申请日：2011-04-28
申请人： Taro Hirai , Noriaki Ikemoto , Takeshi Harada , Naoyuki Kamiya , Hisashi Iida
发明人： Taro Hirai , Noriaki Ikemoto , Takeshi Harada , Naoyuki Kamiya , Hisashi Iida
CPC分类号： F01N11/005 , F01N3/101 , F01N3/2026 , F01N9/00 , F01N13/009 , F01N2550/22 , F01N2900/0602 , F01N2900/1602 , F23G5/50 , F23G7/07 , Y02T10/22 , Y02T10/26 , Y02T10/47
摘要： An apparatus is used for diagnosing the temperature state of a catalyst converter. The catalyst converter includes a catalyst for cleaning an emission, and a conductive carrier for carrying the catalyst. The conductive carrier is energized for temperature rise of the catalyst, and the conductive carrier has a characteristic in which resistance drops with temperature increase. In the apparatus, a first obtaining unit obtains a first parameter having a first correlation with supply power to the conductive carrier for energization of the conductive carrier. A second obtaining unit obtains a second parameter having a second correlation with a temperature of the conductive carrier. A diagnosing unit diagnoses the temperature state of the conductive carrier based on a comparison between the first parameter and the second parameter.
摘要翻译： 一种装置用于诊断催化转化器的温度状态。 催化剂转化器包括用于清洁发射的催化剂和用于承载催化剂的导电载体。 导电载体通电用于催化剂的升温，并且导电载体具有其中电阻随温度升高而下降的特性。 在该装置中，第一获取单元获得与导电载体具有与供电功率的第一相关性的第一参数，以对导电载体通电。 第二获取单元获得与导电载体的温度具有第二相关性的第二参数。 诊断单元基于第一参数和第二参数之间的比较来诊断导电载体的温度状态。
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6.发明授权Method for manufacturing group III nitride semiconductor light emitting element, group III nitride semiconductor light emitting element and lamp 有权III族氮化物半导体发光元件，III族氮化物半导体发光元件和灯的制造方法公开(公告)号：US08772060B2
公开(公告)日：2014-07-08
申请号：US13119127
申请日：2009-09-14
申请人： Hiromitsu Sakai , Takeshi Harada
发明人： Hiromitsu Sakai , Takeshi Harada
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer.
摘要翻译： 本发明提供一种制造III族氮化物半导体发光元件的方法，可以在基板上形成各层的同时抑制翘曲，可以形成包括具有优异结晶性的发光层的半导体层，并且优异 可获得发光特性; 这样的III族氮化物半导体发光元件; 和一盏灯。 具体公开了一种III族氮化物半导体发光元件的制造方法，其中中间层，下层，n型接触层，n型包覆层，发光层，p型包覆层 和p型接触层依次层叠在基板的主平面上，其中直径为4英寸（100mm）以上的基板，其翘曲度H在0.1〜30的范围内 并且准备在室温下朝向主平面翘曲的基板的边缘的至少一部分作为基板; （0002）面的X射线摇摆曲线半峰全宽（FWHM）为100弧秒以下，（10-10）面的X射线摇摆曲线FWHM为300arcsec以下，处于 其中中间层已经形成在衬底上，然后在中间层上形成底层和n型接触层; 此外，在n型接触层上形成n型包覆层，发光层，p型覆层和p型接触层。
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公开(公告)号：US08677576B2
公开(公告)日：2014-03-25
申请号：US13258133
申请日：2009-12-25
IPC分类号： A44B11/25
CPC分类号： A44B11/25 , A44B11/2546 , A44B11/266 , Y10T24/45241 , Y10T24/45257 , Y10T24/45272 , Y10T24/45471 , Y10T24/45476 , Y10T24/45482 , Y10T24/45497 , Y10T24/45508 , Y10T24/45513 , Y10T24/45524 , Y10T24/45529 , Y10T24/45534 , Y10T24/45581 , Y10T24/45984
摘要： A side release buckle includes a plug and a socket into which the plug is inserted for engagement. The plug includes: a base provided with a belt attachment; a pair of legs projecting from the base; an engaging portion formed to the legs; and a connecting portion connecting the legs to each other. The socket includes: a body provided with a belt attachment and an insertion opening; a housing space formed in the body and housing the legs inserted from the insertion opening; an engaged portion formed in the body and engageable with the engaging portion; and a cutout dented toward the insertion opening from an edge of the belt attachment. The cutout is formed over an area surrounded by the legs and the connecting portion when the legs and the connecting portion are housed in the housing space while the engaging portion and the engaged portion are engaged.
摘要翻译： 侧释放带扣包括插头和插座，插头插入插座中用于接合。 插头包括：带有皮带附件的底座; 一对从基座突出的腿; 形成于所述腿部的卡合部; 以及将腿彼此连接的连接部。 插座包括：设置有皮带附件和插入开口的主体; 形成在所述主体中并容纳从所述插入开口插入的所述腿部的容纳空间; 接合部，形成在主体中并与接合部接合; 以及从皮带附件的边缘朝向插入开口凹陷的切口。 当接合部和接合部接合时，当腿和连接部容纳在容纳空间中时，切口形成在由腿和连接部围绕的区域上。
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公开(公告)号：US20120311483A1
公开(公告)日：2012-12-06
申请号：US13540407
申请日：2012-07-02
申请人： Isao Sasaki , Riuzou Nagatsuka , Emi Arakawa , Tetsuya Asai , Masaki Mikamo , Takashi Nunomaki , Hisashi Ohashi , Kenji Tsushio , Mayumi Kamiya , Kenji Yoshida , Takeshi Harada , Keiki Fukuda
发明人： Isao Sasaki , Riuzou Nagatsuka , Emi Arakawa , Tetsuya Asai , Masaki Mikamo , Takashi Nunomaki , Hisashi Ohashi , Kenji Tsushio , Mayumi Kamiya , Kenji Yoshida , Takeshi Harada , Keiki Fukuda
IPC分类号： G06F3/048
CPC分类号： H04N5/23216 , G06F3/0481 , G06F3/04847 , H04N1/00416 , H04N1/00509 , H04N5/23293 , H04N2101/00
摘要： An imaging apparatus generates a GUI screen image for operating the imaging apparatus. A controller controls the generation of the GUI screen image upon detecting a predetermined operation.
摘要翻译： 成像装置生成用于操作成像装置的GUI屏幕图像。 控制器在检测到预定操作时控制GUI屏幕图像的生成。
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公开(公告)号：US08229653B2
公开(公告)日：2012-07-24
申请号：US12486430
申请日：2009-06-17
申请人： Daigo Ando , Takeshi Harada
发明人： Daigo Ando , Takeshi Harada
CPC分类号： B60W20/10 , B60K1/02 , B60K6/365 , B60K6/445 , B60K6/547 , B60L2240/421 , B60L2240/423 , B60L2240/486 , B60W10/02 , B60W10/06 , B60W10/08 , B60W10/115 , B60W10/26 , B60W20/00 , B60W2510/081 , B60W2520/10 , B60W2540/10 , B60W2540/12 , B60W2540/16 , B60W2710/065 , B60W2710/083 , F02D31/003 , F02D41/0215 , F02D41/1497 , F02D41/2445 , F02N11/0829 , Y02T10/48 , Y02T10/6239 , Y02T10/6286 , Y02T10/642
摘要： A power output apparatus for outputting power to a drive shaft includes a control unit that controls an internal combustion engine to perform an idle operation at a predetermined rotation speed, executes idle control amount learning, in which an idle control amount serving as a control amount obtained during the control is learned in accordance with establishment of a predetermined learning condition, within a range in which a rotation speed of the drive shaft is lower than a first speed, when the idle control amount learning is incomplete, and executes again the idle control amount learning within a range in which the rotation speed of the drive shaft is lower than a second speed, which is lower than the first speed, when the idle control amount learning is complete.
摘要翻译： 用于向驱动轴输出动力的动力输出装置包括控制单元，其控制内燃机以预定转速执行怠速运转，执行怠速控制量学习，其中获得作为控制量的怠速控制量 在怠速控制量学习不完全的同时，在驱动轴的转速低于第一速度的范围内，根据预定学习条件的建立来学习控制，再次执行怠速控制量 当空转控制量学习完成时，在驱动轴的转速低于低于第一速度的第二速度的范围内学习。
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公开(公告)号：US08084352B2
公开(公告)日：2011-12-27
申请号：US12131968
申请日：2008-06-03
申请人： Takeshi Harada , Junichi Shibata , Akira Ueki
发明人： Takeshi Harada , Junichi Shibata , Akira Ueki
IPC分类号： H01L21/4763
CPC分类号： H01L23/5222 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： A high-density N-type diffusion layer 116 formed in a separation area 115 makes it possible to reduce a collector current flowing through a parasitic NPN transistor 102. Thus, a normal CMOS process can be used to provide a driving circuit and a data line driver which make it possible to improve resistance to possible noise occurring between adjacent terminals, while controlling a chip size.
摘要翻译： 形成在分离区域115中的高密度N型扩散层116使得可以减少流过寄生NPN晶体管102的集电极电流。因此，可以使用正常的CMOS工艺来提供驱动电路和数据线 驱动器，其可以在控制芯片尺寸的同时提高在相邻端子之间发生的可能的噪声的抵抗力。
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