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1.发明授权公开(公告)号：US08021710B2
公开(公告)日：2011-09-20
申请号：US11205232
申请日：2005-08-16
CPC分类号： H01L51/5088 , H01L51/0003 , H01L51/0051 , H01L51/0062 , H01L51/0086 , H01L51/5092 , H01L51/56 , Y10T428/31504
摘要： The present invention relates to methods and apparatus for producing an electronic device, such as an organic light-emitting diode (OLED), having an electrode with enhanced injection properties. An example method according to the invention comprises the steps of providing an electrode, depositing a first layer of molecular charge transfer material on the electrode, and cross-linking the molecular charge transfer material. With the method according to the invention, an OLED with higher light efficiency, lower operating voltage, and longer lifetime can be produced. The present invention further relates to an electronic device having an electrode with enhanced injection properties.
摘要翻译： 本发明涉及一种用于生产电子器件的方法和装置，例如有机发光二极管（OLED），其具有具有增强的注入特性的电极。 根据本发明的示例性方法包括提供电极，在电极上沉积第一层分子电荷转移材料并交联分子电荷转移材料的步骤。 利用根据本发明的方法，可以生产出光效率更高，工作电压更低，寿命更长的OLED。 本发明还涉及一种具有提高喷射性能的电极的电子装置。
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2.发明申请公开(公告)号：US20100308316A1
公开(公告)日：2010-12-09
申请号：US12856727
申请日：2010-08-16
CPC分类号： H01L51/5088 , H01L51/0003 , H01L51/0051 , H01L51/0062 , H01L51/0086 , H01L51/5092 , H01L51/56 , Y10T428/31504
摘要： An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TeCIBQ, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet.
摘要翻译： 一种具有增强的注入性能的电极的电子器件包括在第一电极上的第一电极和交联的分子电荷转移材料的第一层。 交联分子电荷转移材料可以是受体，其可以由TNF，TN9（CN）2F，TeNF，TeCIBQ，TCNB，DCNQ和TCAQ中的至少一种组成。 交联分子电荷转移材料也可以是供体，其可以由以下至少一种组成：Terpy，Ru（terpy）2 TTN和结晶紫。
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3.发明申请公开(公告)号：US20120325144A1
公开(公告)日：2012-12-27
申请号：US13603457
申请日：2012-09-05
IPC分类号： H05B33/10
CPC分类号： H01L51/5088 , H01L51/0003 , H01L51/0051 , H01L51/0062 , H01L51/0086 , H01L51/5092 , H01L51/56 , Y10T428/31504
摘要： An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet.
摘要翻译： 一种具有增强的注入性能的电极的电子器件包括在第一电极上的第一电极和交联的分子电荷转移材料的第一层。 交联分子电荷转移材料可以是受体，其可以由TNF，TN9（CN）2F，TeNF，TCNB，DCNQ和TCAQ中的至少一种组成。 交联分子电荷转移材料也可以是供体，其可以由以下至少一种组成：Terpy，Ru（terpy）2 TTN和结晶紫。
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公开(公告)号：US20090298209A1
公开(公告)日：2009-12-03
申请号：US12538551
申请日：2009-08-10
申请人： Walter Riess , Heike E. Riel , Siegfried F. Karg
发明人： Walter Riess , Heike E. Riel , Siegfried F. Karg
IPC分类号： H01L21/00
CPC分类号： H01L51/5268 , H01L33/44 , H01L33/56 , H01L51/5253 , H01L51/5259 , H01L51/5262
摘要： A method for manufacturing an optoelectronic device including a capping layer for improving out-coupling and optical fine-tuning of emission characteristics includes steps of: producing an optoelectronic member for generating photons of a predefined wavelength; producing a light emitting surface on the optoelectronic member; and producing a capping layer on the light emitting surface.
摘要翻译： 一种用于制造包括用于改善发射特性的耦合和光学微调的封盖层的光电子器件的方法包括以下步骤：产生用于产生预定波长的光子的光电子部件; 在所述光电子部件上产生发光表面; 并在发光表面上制造覆盖层。
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公开(公告)号：US06995391B2
公开(公告)日：2006-02-07
申请号：US10499538
申请日：2002-11-26
申请人： Santos F. Alvarado , Tilman A. Beierlein , Brian K. Crone , Ute Drechsler , Roland Germann , Siegfried F. Karg , Peter Mueller , Lieike Riel , Walter Riess , Beat Ruhstaller , Paul Seidler , Roland Widmer
发明人： Santos F. Alvarado , Tilman A. Beierlein , Brian K. Crone , Ute Drechsler , Roland Germann , Siegfried F. Karg , Peter Mueller , Lieike Riel , Walter Riess , Beat Ruhstaller , Paul Seidler , Roland Widmer
CPC分类号： H01L51/5088 , H01L51/5218 , H01L2251/5315
摘要： The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.
摘要翻译： 本发明公开了一种电子和光电器件的电极结构。 这种器件包括基本上具有导电层（204）的第一电极，形成在导电层上的非金属层（206），形成在非金属层上的碳氟化合物层（208），形成在该结构上的结构（210）。 电极还可以包括在导电层和非金属层之间的缓冲层（205）。
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公开(公告)号：US08969179B2
公开(公告)日：2015-03-03
申请号：US13885258
申请日：2011-11-02
IPC分类号： H01L21/20 , H01L21/02 , H01L29/06 , H01L29/10 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786 , B82Y10/00 , B82Y40/00
CPC分类号： H01L21/02603 , B82Y10/00 , B82Y40/00 , H01L21/0262 , H01L21/02667 , H01L29/0669 , H01L29/0673 , H01L29/068 , H01L29/1054 , H01L29/42392 , H01L29/66439 , H01L29/66469 , H01L29/775 , H01L29/78687 , H01L29/78696
摘要： A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.
摘要翻译： 一种形成纳米线器件的方法。 该方法包括形成围绕半导体纳米线的应力层。 执行该方法使得由于应力层，纳米线经受径向和纵向应变中的至少一个以增强纳米线中的载流子迁移率。 径向和纵向应变部件可以单独使用或一起使用，并且可以分别制成拉伸或压缩，从而允许制定所需的应变特性，以增强给定装置的纳米线中的导电性。
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公开(公告)号：US08530739B2
公开(公告)日：2013-09-10
申请号：US13536348
申请日：2012-06-28
申请人： Siegfried F. Karg
发明人： Siegfried F. Karg
CPC分类号： H01L31/0687 , H01L31/0352 , H01L31/0547 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a substrate layer and a plurality of nanowires grown outwardly from the substrate layer, at least two of the nanowires including a plurality of sub-cells. The solar cell also includes one or more light guiding layers formed of a transparent, light scattering material and filling the area between the plurality of nanowires.
摘要翻译： 太阳能电池包括从衬底层向外生长的衬底层和多个纳米线，至少两个纳米线包括多个子电池。 太阳能电池还包括由透明的光散射材料形成并填充多个纳米线之间的区域的一个或多个导光层。
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公开(公告)号：US08470676B2
公开(公告)日：2013-06-25
申请号：US12350469
申请日：2009-01-08
IPC分类号： H01L21/8236
CPC分类号： H01L29/24 , H01L29/78 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/146 , H01L45/147
摘要： A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.
摘要翻译： 多端子可编程元件。 可编程元件包括基极上的源电极和漏电极。 可编程元件包括不与源极或漏电极接触的参考电压接触。 基底包括具有氧空位的过渡金属氧化物，用于在施加的电场下漂移。 此外，源极和基极的材料被选择为使得源极和/或漏极电极材料和过渡金属氧化物基底材料的界面形成用于从电极注入基底材料的电子注入的能量势垒。 能量势垒的高度取决于基材的氧空位浓度。 四个非易失性状态可编程到可编程元件中。
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公开(公告)号：US08288803B2
公开(公告)日：2012-10-16
申请号：US12550857
申请日：2009-08-31
申请人： Mikael T. Bjoerk , Siegfried F. Karg , Joachim Knoch , Heike E. Riel , Walter H. Riess , Paul M. Solomon
发明人： Mikael T. Bjoerk , Siegfried F. Karg , Joachim Knoch , Heike E. Riel , Walter H. Riess , Paul M. Solomon
IPC分类号： H01L29/76
CPC分类号： H01L29/7391 , B82Y10/00 , H01L29/0665
摘要： An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.
摘要翻译： 用于隧道场效应晶体管（TFET）结构的间接感应隧道发射器包括至少部分地围绕细长芯元件的外护套，所述细长芯元件由第一半导体材料形成; 设置在所述外护套和所述芯元件之间的绝缘体层; 所述外护套设置在对应于所述TFET结构的源极区域的位置处; 以及将外护套短路到芯元件的源极接触件; 其中所述外护套被配置为在所述芯部元件的源极区域中引入足够的载流子浓度以在导通状态期间隧穿到所述TFET结构的沟道区域。
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10.发明授权公开(公告)号：US08129763B2
公开(公告)日：2012-03-06
申请号：US12027712
申请日：2008-02-07
申请人： Mikael T. Bjoerk , Siegfried F. Karg , Joachim Knoch , Heike E. Riel , Walter H. Riess , Heinz Schmid
发明人： Mikael T. Bjoerk , Siegfried F. Karg , Joachim Knoch , Heike E. Riel , Walter H. Riess , Heinz Schmid
IPC分类号： H01L29/06
CPC分类号： H01L29/0847 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/66666 , H01L29/7827
摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.
摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括形成微带的超晶格结构。 能量滤波器用于控制从第一源极/漏极进入沟道的载流子的注入。 与第一源极/漏极组合的能量滤波器被配置为产生有效的零开尔文第一源极/漏极。
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