Abstract:
A developing method includes: horizontally holding an exposed substrate by a substrate holder; forming a liquid puddle on a part of the substrate, by supplying a developer from a developer nozzle; rotating the substrate; spreading the liquid puddle on a whole surface of the substrate, by moving the developer nozzle such that a supply position of the developer on the rotating substrate is moved in a radial direction of the substrate; bringing, simultaneously with the spreading of the liquid puddle on the whole surface of the substrate, a contact part into contact with the liquid puddle, the contact part being configured to be moved together with the developer nozzle and having a surface opposed to the substrate which is smaller than the surface of the substrate. According to this method, an amount of liquid falling down to the outside of the substrate can be inhibited. In addition, since the rotating speed of the substrate can be decreased, spattering of the developer can be inhibited. Further, a throughput can be improved by stirring the developer.
Abstract:
A developing apparatus including a horizontal substrate holder, a rotating mechanism to rotate the substrate holder, a developer nozzle to supply a developer onto a part of the substrate to form a liquid puddle, a moving mechanism to move the developer nozzle in a radial direction of the rotating substrate, a contact part that moves with the developer nozzle and has a surface opposed to the substrate, which is smaller than the surface of the substrate, and a control unit to output a control signal such that a supply position of the developer on the substrate is moved in the radial direction of the substrate so that the liquid puddle is spread out on a whole surface of the substrate while the contact part is in contact with the liquid puddle.
Abstract:
There are provided first and second cleaning members which are configured to clean a central zone in a rear surface of a wafer when the wafer held by an absorption pad is horizontally held, and configured to clean a peripheral zone in the rear surface of the wafer when the wafer is held by the spin chuck. Due to the provision of the first and second cleaning members, detergency can be improved as compared with a case in which only one cleaning member is used. The first and second cleaning members are configured to be horizontally turned by a common turning shaft. When the central zone in the rear surface of the wafer is cleaned, the turning shaft is located to be overlapped with the wafer. Since the turning shaft is located by using the moving area of the wafer, a size of an apparatus can be reduced.
Abstract:
A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back surface.
Abstract:
The present invention is a developing treatment apparatus for performing development by supplying a developing solution to a substrate having a front surface coated with a positive resist or a negative resist and then subjected to exposure wherein a movable cup is raised to introduce one of scattering developing solutions for the positive and negative resists into an inner peripheral flow path of a cup and the movable cup is lowered to introduce the other of scattering developing solutions for the positive and negative resists into an outer peripheral flow path of the cup, and the developing solution introduced into the inner peripheral flow path and the developing solution introduced into the outer peripheral flow path are separately drained.
Abstract:
A liquid processing apparatus for performing liquid processing with respect to a substrate using processing fluid, includes: a plurality of substrate holding units arranged side by side in a left-right direction; a nozzle configured to supply the processing fluid to the substrate held in each of the substrate holding units; and a nozzle moving mechanism configured to move the nozzle forward and backward in a front-rear direction intersecting an arrangement direction of the substrate holding units between a supplying position in which the processing fluid is supplied to a region including a central portion of the substrate and a waiting position which is defined at a rear side of a row of the substrate holding units opposite to a front side of the row of the substrate holding units at which the substrate is loaded and unloaded.
Abstract:
The present invention is a developing treatment apparatus for performing development by supplying a developing solution to a substrate having a front surface coated with a positive resist or a negative resist and then subjected to exposure wherein a movable cup is raised to introduce one of scattering developing solutions for the positive and negative resists into an inner peripheral flow path of a cup and the movable cup is lowered to introduce the other of scattering developing solutions for the positive and negative resists into an outer peripheral flow path of the cup, and the developing solution introduced into the inner peripheral flow path and the developing solution introduced into the outer peripheral flow path are separately drained.
Abstract:
A liquid processing apparatus for performing liquid processing with respect to a substrate using processing fluid, includes: a plurality of substrate holding units arranged side by side in a left-right direction; a nozzle configured to supply the processing fluid to the substrate held in each of the substrate holding units; and a nozzle moving mechanism configured to move the nozzle forward and backward in a front-rear direction intersecting an arrangement direction of the substrate holding units between a supplying position in which the processing fluid is supplied to a region including a central portion of the substrate and a waiting position which is defined at a rear side of a row of the substrate holding units opposite to a front side of the row of the substrate holding units at which the substrate is loaded and unloaded.
Abstract:
A substrate cleaning apparatus for cleaning a substrate back surface includes a first substrate supporting portion supporting the substrate at a first area of the substrate back surface, the back surface facing down; a second substrate supporting portion supporting the substrate at a second area of the substrate back surface, the second area being separated from the first area; a cleaning liquid supplying portion supplying cleaning liquid to the substrate back surface; a drying portion drying the second area of the substrate back surface; and a cleaning portion cleaning a third area of the substrate back surface when the substrate is supported by the first substrate supporting portion, the third area including the second area, and cleaning a fourth area of the substrate back surface when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area.
Abstract:
A substrate warpage correction method according to this disclosure corrects warpage of a substrate without performing a process on a front surface of the substrate. The substrate warpage correction method includes a surface roughening of performing a surface roughening process on a rear surface of the substrate using a surface roughening processing apparatus configured to be able to perform the surface roughening process on the rear surface of the substrate, to form grooves in the rear surface to thereby correct the warpage of the substrate.