公开(公告)号：US20150318193A1

公开(公告)日：2015-11-05

申请号：US14651816

申请日：2013-12-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro FUKUDA ,  Akihiro KUBO ,  Taro YAMAMOTO ,  Kenzi YADA ,  Atsushi OOKOUCHI

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  B08B5/00 ,  B08B5/02 ,  B08B5/023 ,  H01L21/67028 ,  H01L21/67034

Abstract: A substrate liquid treatment apparatus comprises a chuck (13) that holds and rotates a wafer, a back surface purging nozzle (15) that discharges a purge gas toward the back surface of the wafer, and a periphery purging nozzle 16 that discharges the purge gas onto the back surface of the wafer. The back surface purging nozzle has a slit-like opening part extending from a central side to a peripheral side of the substrate in a plan view. Vertical distance between the slit-like opening part and the substrate held by the substrate holding unit increases as approaching an end of the opening part on the central side of the substrate. The periphery purging nozzle discharges the purge gas, toward a central part of the substrate, toward a region on the back surface of the substrate, which region is located radially outside an end of the slit-like opening part of the back surface purging nozzle and radially inside an peripheral edge of the substrate.

Abstract translation: 基板液体处理装置包括：保持和旋转晶片的卡盘（13），向晶片背面排出吹扫气体的后表面清洗喷嘴（15），以及将净化气体排出的周边清洗喷嘴16 到晶片的背面。 后表面清洗喷嘴在平面图中具有从基板的中心侧向周​​边侧延伸的狭缝状的开口部。 狭缝状开口部与被基板保持单元保持的基板之间的垂直距离随着接近基板的中心侧的开口部的端部而增大。 周边清洗喷嘴将清洗气体朝向基板的中心部朝向基板的背面的区域排出，该区域位于背面清洗喷嘴的狭缝状开口部的端部的径向外侧， 径向地位于衬底的周边边缘内。

公开(公告)号：US20150133032A1

公开(公告)日：2015-05-14

申请号：US14533133

申请日：2014-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro KUBO ,  Masahiro FUKUDA ,  Taro YAMAMOTO ,  Kenji YADA ,  Masashi ENOMOTO ,  Noboru NAKASHIMA

IPC: H01L21/67 ,  B24B37/005 ,  B24B37/34

CPC classification number: B24B37/005 ,  B24B25/00 ,  B24B27/0061 ,  B24B37/34 ,  B24B47/16 ,  B24D7/18 ,  H01L21/0209 ,  H01L21/30625 ,  H01L21/67046 ,  H01L21/67253

Abstract: There is disclosed a polishing cleaning mechanism configured to be in contact with a rear surface of a substrate which is held in a substrate holding unit for holding the rear surface of the substrate and perform a polishing process and a cleaning process on the rear surface of the substrate, including a cleaning member configured to clean the rear surface of the substrate, a polishing member configured to polish the rear surface of the substrate, and a support member configured to support the polishing member and the cleaning member to face the rear surface of the substrate held in the substrate holding unit, wherein a surface of the polishing member facing the substrate and a surface of the cleaning member facing the substrate differ in relative height from each other.

Abstract translation: 公开了一种抛光清洁机构，其构造成与保持在基板保持单元中的基板的后表面接触，用于保持基板的后表面，并且在该基板的后表面上执行抛光处理和清洁处理 基板，包括构造成清洁基板的后表面的清洁构件，被配置为抛光基板的后表面的抛光构件，以及支撑构件，其构造成将抛光构件和清洁构件支撑在面 基板保持在基板保持单元中，其中抛光构件的面向基板的表面和清洁构件的面对基板的表面在相对高度上不同。

公开(公告)号：US20170225289A1

公开(公告)日：2017-08-10

申请号：US15499402

申请日：2017-04-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro KUBO ,  Masahiro FUKUDA ,  Taro YAMAMOTO ,  Kenzi YADA ,  Masashi ENOMOTO ,  Noboru NAKASHIMA

IPC: B24B37/005 ,  H01L21/67 ,  H01L21/306 ,  B24B37/34 ,  H01L21/02

CPC classification number: B24B37/005 ,  B24B25/00 ,  B24B27/0061 ,  B24B37/34 ,  B24B47/16 ,  B24B49/16 ,  B24D7/18 ,  H01L21/0209 ,  H01L21/30625 ,  H01L21/67046 ,  H01L21/67253

Abstract: There is disclosed a polishing cleaning mechanism configured to be in contact with a rear surface of a substrate which is held in a substrate holding unit for holding the rear surface of the substrate and perform a polishing process and a cleaning process on the rear surface of the substrate, including a cleaning member configured to clean the rear surface of the substrate, a polishing member configured to polish the rear surface of the substrate, and a support member configured to support the polishing member and the cleaning member to face the rear surface of the substrate held in the substrate holding unit, wherein a surface of the polishing member facing the substrate and a surface of the cleaning member facing the substrate differ in relative height from each other.

公开(公告)号：US20240139780A1

公开(公告)日：2024-05-02

申请号：US18496824

申请日：2023-10-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kento KURUSU ,  Akihiro KUBO ,  Noboru NAKASHIMA ,  Yasunari KASAI

IPC: B08B1/00 ,  B08B1/02 ,  B24B7/07

CPC classification number: B08B1/001 ,  B08B1/02 ,  B24B7/07

Abstract: A substrate cleaning member includes: a first member including a first contact surface, wherein the first member is configured to clean or polish a main surface of a substrate by moving the first contact surface along the main surface while the first contact surface is in contact with the main surface; a second member including a second contact surface, wherein the second member is configured to clean the main surface by moving the second contact surface along the main surface while the second contact surface is in contact with the main surface; a lower-layer member configured to support the second member such that the second contact surface protrudes beyond the first contact surface in an axial direction in which the predetermined axis extends; and a base configured to support the first member, the second member and the lower-layer member.

公开(公告)号：US20210039221A1

公开(公告)日：2021-02-11

申请号：US16977935

申请日：2019-02-26

Applicant: Tokyo Electron Limited

Inventor： Nozomu KANETAKE ,  Akihiro KUBO ,  Teruhiko KODAMA ,  Taro YAMAMOTO ,  Yasushi TAKIGUCHI ,  Yoshiki OKAMOTO ,  Hayato HOSAKA

IPC: B24B7/22 ,  H01L21/67 ,  B24B19/02 ,  B24B41/047

Abstract: A substrate warpage correction method according to this disclosure corrects warpage of a substrate without performing a process on a front surface of the substrate. The substrate warpage correction method includes a surface roughening of performing a surface roughening process on a rear surface of the substrate using a surface roughening processing apparatus configured to be able to perform the surface roughening process on the rear surface of the substrate, to form grooves in the rear surface to thereby correct the warpage of the substrate.

公开(公告)号：US20180151343A1

公开(公告)日：2018-05-31

申请号：US15824274

申请日：2017-11-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasushi TAKIGUCHI ,  Taro YAMAMOTO ,  Yoshiki OKAMOTO ,  Hayato HOSAKA ,  Teruhiko KODAMA ,  Akihiro KUBO ,  Ryuto OZASA ,  Yuji ARIUCHI ,  Shinsuke KIMURA

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/67 ,  G03F7/20

CPC classification number: H01L21/02016 ,  G03F7/70691 ,  H01L21/0209 ,  H01L21/67046 ,  H01L21/67219 ,  H01L21/67225 ,  H01L21/67288 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68764 ,  H01L21/68792

Abstract: A substrate processing apparatus includes: a first holding part configured to hold a substrate; a second holding part configured to hold the substrate; a sliding member configured to rotate about a vertical axis so that the sliding member slides on a back surface of the substrate; a revolution mechanism configured to revolve the sliding member under rotation about a vertical revolution axis; and a relative movement mechanism configured to horizontally move a relative position between the substrate and a revolution trajectory of the sliding member so that when the substrate is held by the first holding part, the sliding member slides on a central portion of the back surface of the substrate, and when the substrate is held by the second holding part, the sliding member slides on the peripheral portion of the back surface of the substrate under rotation.

公开(公告)号：US20170092504A1

公开(公告)日：2017-03-30

申请号：US15267183

申请日：2016-09-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro KUBO ,  Teruhiko KODAMA

IPC: H01L21/304 ,  B24B37/20 ,  H01L21/308 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/304 ,  B24B37/20 ,  H01L21/02052 ,  H01L21/0274 ,  H01L21/3043 ,  H01L21/3086 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67092 ,  H01L21/67219 ,  H01L21/68728 ,  H01L21/68742 ,  H01L21/6875

Abstract: There is provided a substrate processing method which includes polishing a rear surface of a substrate before a pattern exposure such that the rear surface is subjected to a roughening treatment; and bypassing a roughness alleviating treatment with respect to the polished rear surface of the substrate.