公开(公告)号：US5726598A

公开(公告)日：1998-03-10

申请号：US743567

申请日：1996-11-04

申请人： Tomohide Terashima ,  Masanori Fukunaga

发明人： Tomohide Terashima ,  Masanori Fukunaga

IPC分类号： H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H03K5/153 ,  H05B41/282

CPC分类号： H01L27/0652 ,  H05B41/2828

摘要： A semiconductor device having a voltage sensing element is disclosed which allows reduction of power consumption in comparison with a conventional device and enables to obtain a sufficient output voltage to secure sensing accuracy even when an input voltage is small. In the voltage sensing element of the semiconductor device, an n.sup.- layer is formed on a front surface of a p.sup.- substrate. A p type diffused region and an n type diffused region are formed at a main surface of n.sup.- layer, spaced apart by a prescribed distance. An electrode is formed on p type diffused region, and an electrode is formed on n type diffused region. An electrode is formed on a rear surface of p.sup.- substrate. P.sup.- substrate and n.sup.- layer constitute a diode in a reversely biased state. As a result, power consumption is reduced in comparison with a conventional voltage dividing resistor circuit.

公开(公告)号：US5500541A

公开(公告)日：1996-03-19

申请号：US343945

申请日：1994-11-17

申请人： Tomohide Terashima ,  Masanori Fukunaga

发明人： Tomohide Terashima ,  Masanori Fukunaga

IPC分类号： H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H03K5/153 ,  H05B41/282 ,  H01L29/861 ,  H01L31/107

CPC分类号： H01L27/0652 ,  H05B41/2828

摘要： A semiconductor device having a voltage sensing element is disclosed which allows reduction of power consumption in comparison with a conventional device and enables to obtain a sufficient output voltage to secure sensing accuracy even when an input voltage is small. In the voltage sensing element of the semiconductor device, an n.sup.- layer is formed on a front surface of a p.sup.- substrate. A p type diffused region and an n type diffused region are formed at a main surface of n.sup.- layer, spaced apart by a prescribed distance. An electrode is formed on p type diffused region, and an electrode is formed on n type diffused region. An electrode is formed on a rear surface of p.sup.- substrate. P.sup.- substrate and n.sup.- layer constitute a diode in a reversely biased state. As a result, power consumption is reduced in comparison with a conventional voltage dividing resistor circuit.

摘要翻译： 公开了一种具有电压感测元件的半导体器件，其与常规器件相比能够降低功耗，并且即使当输入电压较小时也能够获得足够的输出电压以确保感测精度。 在半导体器件的电压感测元件中，在p-衬底的前表面上形成n层。 p型扩散区域和n型扩散区域形成在n层的主表面上，间隔开规定的距离。 在p型扩散区域上形成电极，在n型扩散区域形成电极。 在p基板的后表面上形成电极。 P-衬底和n-层构成反向偏置状态的二极管。 结果，与传统的分压电阻电路相比，功耗降低。

公开(公告)号：US5200638A

公开(公告)日：1993-04-06

申请号：US547243

申请日：1990-07-03

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/336 ,  H01L21/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/732 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.31 epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

公开(公告)号：US5279977A

公开(公告)日：1994-01-18

申请号：US997924

申请日：1992-12-29

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/336 ,  H01L21/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/732 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861 ,  H01L21/265

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

摘要翻译： 在p-衬底上，n型外延层由p阱包围和隔离。 在n外延层的表面中，在p阱附近提供p浮置区，在其上设置感测电极。 绝缘膜和导电膜形成在p阱和p浮动区之间的n外延层上以重叠。 导电膜和p浮动区域用作复合场板，这使得表面电场分布受表面电荷状态的影响很困难，通过扩展耗尽层来减轻表面电场，延伸 从n-外延层和p阱之间的pn结到电流阻挡状态的n-外延层朝向n-外延层的中心。 p浮动区域的电位由电流阻塞状态下的电容耦合决定，因此通过感测电极的感测电压特性可以是平滑的。

公开(公告)号：US5258641A

公开(公告)日：1993-11-02

申请号：US944074

申请日：1992-09-11

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861 ,  H01L29/68

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

摘要翻译： 在p-衬底上，n型外延层由p阱包围和隔离。 在n外延层的表面中，在p阱附近提供p浮置区，在其上设置感测电极。 绝缘膜和导电膜形成在p阱和p浮动区之间的n外延层上以重叠。 导电膜和p浮动区域用作复合场板，这使得表面电场分布受表面电荷状态的影响很困难，通过扩展耗尽层来减轻表面电场，延伸 从n-外延层和p阱之间的pn结到电流阻挡状态的n-外延层朝向n-外延层的中心。 p浮动区域的电位由电流阻塞状态下的电容耦合决定，因此通过感测电极的感测电压特性可以是平滑的。

公开(公告)号：US07619503B2

公开(公告)日：2009-11-17

申请号：US11336991

申请日：2006-01-23

申请人： Motonobu Joukou ,  Masanori Fukunaga ,  Nobutake Taniguchi ,  Takahiro Inoue ,  Nobuya Nishida

发明人： Motonobu Joukou ,  Masanori Fukunaga ,  Nobutake Taniguchi ,  Takahiro Inoue ,  Nobuya Nishida

IPC分类号： G05B23/02

CPC分类号： H03K17/0828 ,  H01L2924/0002 ,  H03K17/127 ,  H03K17/18 ,  H01L2924/00

摘要： A power semiconductor apparatus is provided with power controlling semiconductor modules connected in parallel to each other. Each power controlling semiconductor module controls driving of a power semiconductor device. The power semiconductor apparatus includes a transmission circuit and a reception circuit provided in one and another power controlling semiconductor modules, respectively. The transmission circuit transmits a predetermined communication signal to another power controlling semiconductor module based on a predetermined activation signal generated by one power controlling semiconductor module. The reception circuit receives the transmitted communication signal, and controls driving control operation of another power controlling semiconductor module based on the received communication signal.

摘要翻译： 功率半导体装置设置有彼此并联连接的功率控制半导体模块。 每个功率控制半导体模块控制功率半导体器件的驱动。 功率半导体装置包括分别设置在一个和另一个功率控制半导体模块中的发送电路和接收电路。 传输电路基于由一个功率控制半导体模块产生的预定的激活信号将预定的通信信号发送到另一个功率控制半导体模块。 接收电路接收发送的通信信号，并且基于接收到的通信信号来控制另一功率控制半导体模块的驱动控制操作。

公开(公告)号：US06724169B2

公开(公告)日：2004-04-20

申请号：US10260406

申请日：2002-10-01

申请人： Gourab Majumdar ,  Shinji Hatae ,  Tatsuo Oota ,  Masanori Fukunaga

发明人： Gourab Majumdar ,  Shinji Hatae ,  Tatsuo Oota ,  Masanori Fukunaga

IPC分类号： H02P528

CPC分类号： H02M7/538 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H03K17/063 ,  H03K17/567 ,  H03K17/6871 ,  H01L2924/00014 ,  H01L2924/00

摘要： A controller for controlling a power device in response to an input signal includes a first signal generator for generating a first signal in response to the input signal; a level shifter for changing an output level of the first signal to a value which is a function of a first main power supply potential in order to produce a second signal; and a first control signal generator for generating the control signal for a first semiconductor device in response to the second signal. The level shifter includes at least one level shifting semiconductor element wherein the semiconductor element is controlled by the first signal and the at least one level shifting semiconductor element exhibiting breakdown voltage characteristics whereby a breakdown voltage has a value not less than a voltage in the range between a value of the first and a value of a second main power supply potential.

摘要翻译： 用于响应于输入信号控制功率器件的控制器包括：第一信号发生器，用于响应于输入信号产生第一信号; 电平移位器，用于将第一信号的输出电平改变为作为第一主电源电位的函数的值，以产生第二信号; 以及第一控制信号发生器，用于响应于第二信号产生用于第一半导体器件的控制信号。 电平移位器包括至少一个电平移位半导体元件，其中半导体元件由第一信号和至少一个电平移位半导体元件控制，具有击穿电压特性，由此击穿电压具有不小于 第一主电源电位的值和第二主电源电位的值。

公开(公告)号：US5963066A

公开(公告)日：1999-10-05

申请号：US922373

申请日：1997-09-03

申请人： Masanori Fukunaga

发明人： Masanori Fukunaga

IPC分类号： H02J1/00 ,  G05F3/18 ,  H02M7/48 ,  H02M7/5387 ,  H03K17/06 ,  H03K17/567 ,  H03K17/687 ,  H03B1/00

CPC分类号： H03K17/6871 ,  H02M7/538 ,  H03K17/567

摘要： A capacitor (C) and a Zener diode (ZD2) are connected in parallel to a high-voltage side drive circuit (2). when a Zener voltage (VZD2) is set 5V, a voltage which is charged up in the capacitor (C) is determined by the Zener voltage (VZD2). Hence, it is only necessarv to set a voltage (VCC) in a loxv-voltage d.c. power source (4) at a value which is higher than (VZD2+VD+VCE), where VD is a forward-direction voltage to a diode (Di) and VCE is an ON-voltage to a low-voltage side switching device (Q1). Since a variation in a charging voltage which is supplied to a high-voltage side drive circuit is suppressed, it is possible to drive a switching device with 5V.

摘要翻译： 电容器（C）和齐纳二极管（ZD2）并联连接到高压侧驱动电路（2）。 当齐纳电压（VZD2）为5V时，在电容器（C）中充电的电压由齐纳电压（VZD2）决定。 因此，只需要将伏特电压（VCC）设置为伏特电压d.c. 电源（4）处于高于（VZD2 + VD + VCE）的值，其中VD是到二极管的正向电压（Di），并且VCE是到低压侧开关装置的导通电压 Q1）。 由于抑制了提供给高压侧驱动电路的充电电压的变化，所以可以用5V驱动开关装置。

公开(公告)号：US5077595A

公开(公告)日：1991-12-31

申请号：US575661

申请日：1990-08-31

申请人： Masanori Fukunaga

发明人： Masanori Fukunaga

IPC分类号： H01L23/14 ,  H01L23/538 ,  H01L23/64 ,  H02M7/00

CPC分类号： H01L25/16 ,  H01L23/142 ,  H01L23/538 ,  H01L23/642 ,  H01L24/49 ,  H01L25/162 ,  H02M7/00 ,  H01L2223/6644 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025

摘要： On an insulating layer (32) formed on a metal substrate (31), cascode-connected power switching elements (1-6) are provided and shield patterns (101-104) are formed. Control circuits (13-18) for the switching elements (1-6) are formed on insulating layers (105, 106) formed on the shield patterns (101-104) which are fixed to potentials responsive to potentials of output electrodes of the corresponding switching elements (1-6). The control circuits (13-18) and the corresponding shield patterns (101-104) are in capacity coupling. Thus, noise arises in the control circuits (13-18) with respect to the metal substrate (31) when noise is applied to current paths of the switching elements (1-6) with respect to the metal substrate (31). As a result, viewing from the output electrodes of the switching elements (1-6), the control circuits (13-18) have noise equivalent to nothing.

摘要翻译： 在形成在金属基板（31）上的绝缘层（32）上，设置有共源共栅功率开关元件（1-6），形成屏蔽图案（101-104）。 用于开关元件（1-6）的控制电路（13-18）形成在形成在屏蔽图案（101-104）上的绝缘层（105,106）上，该绝缘层固定在响应于相应的输出电极的电位的电位 开关元件（1-6）。 控制电路（13-18）和相应的屏蔽图案（101-104）处于电容耦合。 因此，当噪声施加到开关元件（1-6）相对于金属基板（31）的电流路径时，相对于金属基板（31），在控制电路（13-18）中产生噪声。 结果，从开关元件（1-6）的输出电极观察，控制电路（13-18）的噪声相当于没有。

公开(公告)号：US20060193091A1

公开(公告)日：2006-08-31

申请号：US11336991

申请日：2006-01-23

申请人： Motonobu Joukou ,  Masanori Fukunaga ,  Nobutake Taniguchi ,  Takahiro Inoue ,  Nobuya Nishida

发明人： Motonobu Joukou ,  Masanori Fukunaga ,  Nobutake Taniguchi ,  Takahiro Inoue ,  Nobuya Nishida

IPC分类号： H02H7/08

CPC分类号： H03K17/0828 ,  H01L2924/0002 ,  H03K17/127 ,  H03K17/18 ,  H01L2924/00

摘要： A power semiconductor apparatus is provided with power controlling semiconductor modules connected in parallel to each other. Each power controlling semiconductor module controls driving of a power semiconductor device. The power semiconductor apparatus includes a transmission circuit and a reception circuit provided in one and another power controlling semiconductor modules, respectively. The transmission circuit transmits a predetermined communication signal to another power controlling semiconductor module based on a predetermined activation signal generated by one power controlling semiconductor module. The reception circuit receives the transmitted communication signal, and controls driving control operation of another power controlling semiconductor module based on the received communication signal.