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27 条记录 (耗时 0.026 秒)

    Solid-state image sensor
    1.
    发明授权
    Solid-state image sensor 失效
    固态图像传感器

    公开(公告)号：US5040038A

    公开(公告)日：1991-08-13

    申请号：US262056

    申请日：1988-10-24

    申请人： Naoki Yutani ,  Sotoju Asai ,  Shiro Hine ,  Satoshi Hirose ,  Hidekazu Yamamoto ,  Masashi Ueno

    发明人： Naoki Yutani ,  Sotoju Asai ,  Shiro Hine ,  Satoshi Hirose ,  Hidekazu Yamamoto ,  Masashi Ueno

    IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/365 ,  H04N5/372

    CPC分类号： H01L27/14831

    摘要： A solid-state image sensor comprises photoelectric converting devices (22) formed on a p type semiconductor substrate (1), transfer gates (26) for reading signal charges therefrom, scanning lines (21) for selecting the transfer gates (26), and transfer electrodes (11) of the first layer and transfer electrodes (12) of the second layer alternately disposed for transferring in the vertical direction the read signal charges. All the electrodes of the transfer gates (26) are formed integrally with the transfer electrodes (12) of the second layer, with the result that all the electrodes of the transfer gates (26) are common to the transfer electrodes of the same layer (the second layer). Although the potential wall (340) is formed in the transfer channel (3) beneath the transfer electrode (12) connected to the transfer gate (26), the same is insulated from adjacent the transfer electrode (11) on the charge transfer direction side. As a result, when a voltage is applied to the transfer electrode adjacent thereto, the signal charges are fully transferred.

    摘要翻译： 固态图像传感器包括形成在p型半导体衬底（1）上的光电转换器件（22），用于读取信号电荷的传输门（26），用于选择传输门（26）的扫描线（21） 交替地设置第一层的电极（11）和第二层的传输电极（12），用于在垂直方向上传送读取信号电荷。 传输栅极（26）的所有电极与第二层的传输电极（12）整体形成，结果是传输栅极（26）的所有电极对同一层的传输电极是共同的（ 第二层）。 尽管在连接到传输栅极（26）的传输电极（12）下方的传输沟道（3）中形成了电位壁（340），但是在电荷转移方向侧上与传输电极（11）相邻的电位壁 。 结果，当对与其相邻的转印电极施加电压时，信号电荷被完全转印。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110001209A1

    公开(公告)日：2011-01-06

    申请号：US12867283

    申请日：2009-03-12

    申请人： Hiroshi Watanabe ,  Naoki Yutani ,  Kenichi Ohtsuka ,  Kenichi Kuroda ,  Masayuki Imaizumi ,  Yoshinori Matsuno

    发明人： Hiroshi Watanabe ,  Naoki Yutani ,  Kenichi Ohtsuka ,  Kenichi Kuroda ,  Masayuki Imaizumi ,  Yoshinori Matsuno

    IPC分类号： H01L29/47

    CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L24/05 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/6606 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00

    摘要： In a termination structure in which a JTE layer is provided, a level or defect existing at an interface between a semiconductor layer and an insulating film, or a minute amount of adventitious impurities that infiltrate into the semiconductor interface from the insulating film or from an outside through the insulating film becomes a source or a breakdown point of a leakage current, which deteriorates a breakdown voltage. A semiconductor device includes: an n− type semiconductor layer formed on an n+ type semiconductor substrate; a first electrode that is formed on the n− type semiconductor layer and functions as a Schottky electrode; a GR layer that is a first p type semiconductor layer formed on a surface of the n− type semiconductor layer below an end of the first electrode and a perimeter thereof; a JTE layer that is formed of a second p type semiconductor layer formed on a bottom and a lateral surface of a groove arranged in a ring shape around the GR layer apart from the GR layer, in a surface of the n− typesemiconductor layer; an insulating film provided so as to cover the GR layer and the JTE layer; and a second electrode that is an Ohmic electrode formed below a rear surface of the n+ type semiconductor substrate.

    摘要翻译： 在提供JTE层的端接结构中，存在于半导体层和绝缘膜之间的界面处的水平或缺陷，或从绝缘膜或外部渗透到半导体界面的少量不定性杂质 通过绝缘膜成为漏电流的源极或击穿点，这会降低击穿电压。 半导体器件包括：形成在n +型半导体衬底上的n型半导体层; 形成在n型半导体层上并用作肖特基电极的第一电极; GR层，其是形成在所述第一电极的端部下方的所述n型半导体层的表面上的第一p型半导体层及其周边; 在所述n型半导体层的表面中形成由形成在所述GR层之外的围绕所述GR层的环状的槽的底部和侧面上形成的第二p型半导体层的JTE层; 设置为覆盖GR层和JTE层的绝缘膜; 以及形成在n +型半导体衬底的后表面下方的欧姆电极的第二电极。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130221477A1

    公开(公告)日：2013-08-29

    申请号：US13883073

    申请日：2011-12-22

    申请人： Hiroshi Watanabe ,  Naoki Yutani ,  Yoshiyuki Nakaki ,  Kenichi Ohtsuka

    发明人： Hiroshi Watanabe ,  Naoki Yutani ,  Yoshiyuki Nakaki ,  Kenichi Ohtsuka

    IPC分类号： H01L29/872

    CPC分类号： H01L29/872 ,  H01L27/0207 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/6606

    摘要： A semiconductor device that can achieve a high-speed operation at a time of switching, and the like. The semiconductor device includes: a p-type buried layer buried within an n−-type semiconductor layer; and a p-type surface layer formed in a central portion of each of cells. In a contact cell, the p-type buried layer is in contact with the p-type surface layer. The semiconductor device further includes: a p+-type contact layer formed on the p-type surface layer of the contact cell; and an anode electrode provided on the n−-type semiconductor layer. The anode electrode forms a Schottky junction with the n−-type semiconductor layer and forms an ohmic junction with the p+-type contact layer.

    摘要翻译： 可以在切换时实现高速运转的半导体装置等。 半导体器件包括：埋在n型半导体层内的p型掩埋层; 以及形成在每个单元的中心部分的p型表面层。 在接触电池中，p型掩埋层与p型表面层接触。 半导体器件还包括：形成在接触单元的p型表面层上的p +型接触层; 以及设置在n型半导体层上的阳极电极。 阳极与n型半导体层形成肖特基结，并与p +型接触层形成欧姆结。

    METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
    制造碳化硅半导体器件的方法

    公开(公告)号：US20090098719A1

    公开(公告)日：2009-04-16

    申请号：US12188676

    申请日：2008-08-08

    申请人： Yoshinori MATSUNO ,  Kenichi Ohtsuka ,  Kenichi Kuroda ,  Shozo Shikama ,  Naoki Yutani

    发明人： Yoshinori MATSUNO ,  Kenichi Ohtsuka ,  Kenichi Kuroda ,  Shozo Shikama ,  Naoki Yutani

    IPC分类号： H01L21/04

    CPC分类号： H01L21/0495 ,  H01L29/6606

    摘要： An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The method for manufacturing the silicon carbide semiconductor device according to the invention includes the steps of: (a) preparing a silicon carbide substrate; (b) forming an epitaxial layer on a first main surface of the silicon carbide substrate; (c) forming a protective film on the epitaxial layer; (d) forming a first metal layer on a second main surface of the silicon carbide substrate; (e) applying heat treatment to the silicon carbide substrate at a predetermined temperature to form an ohmic junction between the first metal layer and the second main surface of the silicon carbide substrate; (f) removing the protective film; (g) forming a second metal layer on the epitaxial layer; and (h) applying heat treatment to the silicon carbide substrate at a temperature from 400° C. to 600° C. to form a Schottky junction of desired characteristics between the second metal layer and the epitaxial layer.

    摘要翻译： 本发明的目的是提供一种制造具有恒定特性并减小正向特性变化的碳化硅半导体器件的方法。 根据本发明的制造碳化硅半导体器件的方法包括以下步骤：（a）制备碳化硅衬底; （b）在所述碳化硅衬底的第一主表面上形成外延层; （c）在外延层上形成保护膜; （d）在所述碳化硅衬底的第二主表面上形成第一金属层; （e）在预定温度下对所述碳化硅衬底进行热处理以在所述第一金属层和所述碳化硅衬底的所述第二主表面之间形成欧姆结; （f）去除保护膜; （g）在所述外延层上形成第二金属层; 和（h）在400℃至600℃的温度下对所述碳化硅衬底进行热处理以在所述第二金属层和所述外延层之间形成所需特性的肖特基结。

    Pressure sensor with a thermal pressure detecting element
    9.
    发明授权
    Pressure sensor with a thermal pressure detecting element 有权
    具有热压检测元件的压力传感器

    公开(公告)号：US06393919B1

    公开(公告)日：2002-05-28

    申请号：US09644693

    申请日：2000-08-24

    申请人： Hiroshi Ohji ,  Kazuhiko Tsutsumi ,  Yuichi Sakai ,  Naoki Yutani

    发明人： Hiroshi Ohji ,  Kazuhiko Tsutsumi ,  Yuichi Sakai ,  Naoki Yutani

    IPC分类号： G01L1904

    CPC分类号： G01L11/002

    摘要： A pressure sensor of the present invention comprises a diaphragm 6 having a first surface which receives pressure and a thermal detecting portion 3 with a heat sensitive portion disposed as to oppose the diaphragm through a spacer, wherein displacement values of the diaphragm owing to variations in pressure are detected at the thermal detecting portion as variation values of thermal equilibrium state. With this arrangement, a surface of the diaphragm which directly receives pressure from measuring fluid does not need to undergo film forming or photolithographic processes whereby main portions of thermal pressure detecting elements might be formed onto a silicon substrate by large quantities in a lump sum through simple manufacturing processes so that it is possible to improve accuracy and reliability of the thermal pressure detecting elements and to obtain a pressure sensor of low cost.

    摘要翻译： 本发明的压力传感器包括具有接收压力的第一表面的隔膜6和具有通过间隔件布置成与隔膜相对设置的热敏部分的热检测部分3，其中由于压力变化导致隔膜的位移值 在热检测部分被检测为热平衡状态的变化值。 通过这种布置，直接从测量流体接收压力的隔膜的表面不需要进行成膜或光刻工艺，其中热压检测元件的主要部分可以通过简单的一次性大量形成在硅基板上 制造工艺，从而可以提高热压检测元件的精度和可靠性，并获得低成本的压力传感器。