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    MG alloy member and its use
    1.
    发明授权
    MG alloy member and its use 失效
    MG合金元件及其用途

    公开(公告)号：US06328530B1

    公开(公告)日：2001-12-11

    申请号：US09261963

    申请日：1999-03-03

    申请人： Tomoya Kato ,  Takeshi Obana ,  Mitsuyoshi Shouji ,  Kazumi Fujii ,  Kenya Ohashi

    发明人： Tomoya Kato ,  Takeshi Obana ,  Mitsuyoshi Shouji ,  Kazumi Fujii ,  Kenya Ohashi

    IPC分类号： F04D2902

    CPC分类号： F04D29/023 ,  A47L5/22 ,  C23C22/40 ,  C23C22/42 ,  C23C22/44 ,  F05D2230/90 ,  F05D2300/125 ,  F05D2300/17 ,  F05D2300/512 ,  F05D2300/611 ,  Y10T428/3154 ,  Y10T428/31544

    摘要： A Mg alloy member with an anticorrosive coating free from any enviromental load can be produced by using a solution for chemical conversion treatment for anticorrosive coating, which comprises 0.05 to 1 mol/l of an oxoacid compound of heavy metal selected from Mo, W and V and has a pH of 2 to 6 adjusted by sulfuric acid or nitric acid, and is characterized by contacting the surface of Mg alloy preferably containing 2 to 10% Al with the solution, thereby forming a specific oxide film and, if necessary further forming a fluorine-containing organic film on the film, the resulting Mg alloy member being used in electrically driven blowers, note-type personal computers, various household electrical appliances, etc.

    摘要翻译： 可以通过使用用于防腐涂层的化学转化处理溶液来制备具有不受任何环境负荷的防腐涂层的Mg合金构件，其包含0.05至1mol / l的选自Mo，W和V的重金属的含氧酸化合物 并且通过硫酸或硝酸调节pH为2〜6，其特征在于使优选含有2〜10％的Al的Mg合金的表面与溶液接触，由此形成特定的氧化膜，如果需要，进一步形成 膜上含氟有机膜，所得Mg合金构件用于电动鼓风机，笔记型个人计算机，各种家用电器等。

    Thin-film transistor formed on insulating substrate
    5.
    发明申请
    Thin-film transistor formed on insulating substrate 失效
    绝缘基板上形成薄膜晶体管

    公开(公告)号：US20050212063A1

    公开(公告)日：2005-09-29

    申请号：US11085111

    申请日：2005-03-22

    申请人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

    发明人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

    IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/8236 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

    CPC分类号： H01L27/1296 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78696

    摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

    摘要翻译： 提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响 形成在Si岛的边缘部分的寄生晶体管。 薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。 栅极区域在绝缘基板上具有平面的环形形状。 高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

    Crystallization apparatus, crystallization method, device, and light modulation element
    6.
    发明授权
    Crystallization apparatus, crystallization method, device, and light modulation element 有权
    结晶装置，结晶方法，装置和光调制元件

    公开(公告)号：US08009345B2

    公开(公告)日：2011-08-30

    申请号：US12962750

    申请日：2010-12-08

    申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

    发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

    IPC分类号： G02F1/01

    CPC分类号： B23K26/066

    摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.

    摘要翻译： 结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。 结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。 光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或 下面。

    Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor
    7.
    发明授权
    Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor 有权
    薄膜晶体管，半导体器件，显示器，结晶方法和制造薄膜晶体管的方法

    公开(公告)号：US07335910B2

    公开(公告)日：2008-02-26

    申请号：US11432387

    申请日：2006-05-12

    申请人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

    发明人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

    IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L29/00

    CPC分类号： H01L29/78621 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

    摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.

    摘要翻译： 本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。 用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。 因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。 形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

    Semiconductor laser module and method of making the same
    8.
    发明授权
    Semiconductor laser module and method of making the same 有权
    半导体激光模块及其制作方法

    公开(公告)号：US06804277B2

    公开(公告)日：2004-10-12

    申请号：US09965863

    申请日：2001-10-01

    申请人： Toshio Kimura ,  Sadayoshi Kanamaru ,  Tomoya Kato

    发明人： Toshio Kimura ,  Sadayoshi Kanamaru ,  Tomoya Kato

    IPC分类号： H01S304

    CPC分类号： H01S5/0222 ,  H01S5/02208 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438

    摘要： A semiconductor laser module according to the present invention has a semiconductor laser element for outputting a laser beam and a package hermitically containing and sealing the semiconductor laser element. The package has a vent for introducing and/or exhausting a low heat conduction type gas into or from the package. The vent is hermetically sealed by swaging and welding the external end thereof after the low heat conduction type gas has been introduced into or exhausted form the package.

    摘要翻译： 根据本发明的半导体激光器模块具有用于输出激光束的半导体激光元件和密封半导体激光元件的封装。 该封装具有用于将低热传导型气体引入和/或从封装中排出的通风口。 在低导热型气体已经从包装引入或排出之后，通过对其外端进行模锻和焊接来将通风口密封。